Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
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B5817W
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B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL - Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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B5817W
Abstract: B5818W B5819W Diode SJ Sj diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W
B5819W
Diode SJ
Sj diode
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B5817W-5819W
Abstract: DIODE marking Sl B5819W B5817W B5818W diode reverse voltage protection Schottky Diode 30V 1A SOD123 1A diode low reverse current
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W-5819W
DIODE marking Sl
B5819W
B5817W
diode reverse voltage protection
Schottky Diode 30V 1A SOD123
1A diode low reverse current
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Diode SJ
Abstract: Schottky Diode 30V 1A SOD Schottky Diode 30V 1A SOD123 B5817W B5818W B5819W Silicon Schottky Diode sod123 sl DIODE sod123
Text: B5817W-B5819W SCHOTTKY BARRIER DIODE PRODUCT SUMMARY SOD-123 Plastic-Encapsulate Diode SOD-123 + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - Pb-free; RoHS-compliant MARKING: B5817W: SJ B5818W: SK
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B5817W-B5819W
OD-123
OD-123
B5817W:
B5818W:
B5819W:
B5817W
B5818W
B5819W
Diode SJ
Schottky Diode 30V 1A SOD
Schottky Diode 30V 1A SOD123
B5817W
B5818W
B5819W
Silicon Schottky Diode sod123
sl DIODE sod123
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
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B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ B5818WS:SK B5819WS: SL - Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
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B5817WS
B5818WS
B5819WS
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Diode SJ 14
Abstract: DIODE marking Sl B5817WS-5819WS B5818WS B5819WS Diode SJ diode marking SJ B5817WS diode reverse voltage protection B5819WSSL
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
Diode SJ 14
DIODE marking Sl
B5817WS-5819WS
B5819WS
Diode SJ
diode marking SJ
B5817WS
diode reverse voltage protection
B5819WSSL
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Untitled
Abstract: No abstract text available
Text: SKKE 600F THYRISTOR BRIDGE,SCR,BRIDGE WXHY WXXY SJXYH Z =P@ % '40124C4 I0-C. 3 , )*+2*C)CB ):.,0+2)*5 W W SJ%W Z >O@ % 'B2*< ?[@¥ P@ AM¥ U( Z [P ]$5 ?Q@@ ?Q@@ Symbol Conditions SJ%W SJHY 2a+ SEMIPACK Fast Diode Modules SKKE 600F H^^N O@@J?Q Values Units
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40124C4
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
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B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
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B5817WS
B5818WS
B5819WS
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Sj Schottky Rectifier
Abstract: No abstract text available
Text: SENSITRON 1N6660, 1N6660R SJ, SX, SV SEMICONDUCTOR TECHNICAL DATA DATASHEET 4300, Rev- HERMETIC POWER SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •
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1N6660,
1N6660R
SJ6660,
SX6660
SV6660
Sj Schottky Rectifier
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ
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OD-323
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OD-323
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B5817WS
B5818WS
B5819WS
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melf diode D-5D
Abstract: 1N6638 1N6638U 1N6640 1N6640U 1N6642
Text: 1N6638/ U/ US 1N6640/ US 1N6642/ U/ US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. B SJ SX SV SIGNAL OR COMPUTER DIODE 1N6638, 1N6640, 1N6642 • Switching Diode • Hermetic, non-cavity glass package • Metallurgically bonded • Manufacture & screen to TX/TXV/JANS per MIL-PRF-19500/578,609 using Sensitron
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1N6638/
1N6640/
1N6642/
1N6638,
1N6640,
1N6642
MIL-PRF-19500/578
7700-409X
DO-35
1N6638
melf diode D-5D
1N6638U
1N6640
1N6640U
1N6642
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1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
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d 5072 transistor
Abstract: d 5072 1N6171AUS
Text: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C
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1N6138A/US
1N6173A/US
1N6138A/US
1N6139A/US
1N6140A/US
1N6141A/US
1N6142A/US
1N6143A/US
1N6144A/US
1N6145A/US
d 5072 transistor
d 5072
1N6171AUS
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S -wsi sJ«w'','sa'8 HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM400DY-66S • ID C . 4 0 0 A • V rrm . 3 3 0 0 V
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OCR Scan
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RM400DY-66S
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Untitled
Abstract: No abstract text available
Text: E R E 2 4 - 0 6 • E R E 7 4 - 0 6 3 o a •6 0 0 V • Outline Drawings FAST RECOVERY DIODE : Features <i"<—î/a 'sj-'y y • Glass passivated chip High reverse voltage capability Stud mounted • Applications • • • Switching power supplies Free-wheel diode
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l95t/R89
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NA42
Abstract: No abstract text available
Text: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.
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1SV303
C2V/C25V
NA42
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