Diode SJ 56
Abstract: diode sj pj+939+diode
Text: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ
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SK50GD12T4T
Diode SJ 56
diode sj
pj+939+diode
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pj 72 diode
Abstract: Diode SJ 12 pj 86 diode Diode SJ
Text: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ
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SK75GD12T4T
pj 72 diode
Diode SJ 12
pj 86 diode
Diode SJ
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pj 56 diode
Abstract: semikron 3Y diode PJ diode ph9a
Text: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ
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SK100GD12T4T
pj 56 diode
semikron 3Y diode
PJ diode
ph9a
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PDF
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Sj 47 diode
Abstract: Diode SJ 62 a
Text: 2SK3600-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3600-01L
Sj 47 diode
Diode SJ 62 a
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PDF
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SJ 76 A DIODE
Abstract: No abstract text available
Text: SKM 100GB125DN G% R LS TC+ / * 00 ,6&)7420) 08)%2<2)5 Absolute Maximum Ratings Symbol Conditions IGBT UCQ1 GV R LS TC ?C GV R ISJ TC ?CPY Ultra Fast IGBT Module SKM 100GB125DN 680% ILJJ U IJJ D G%'0) R XS TC XJ D ISJ D [ LJ U GV R ILS TC IJ _0 G%'0) R LS TC
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100GB125DN
SJ 76 A DIODE
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6r041c6
Abstract: IPW60R041C6 6r041c6 mosfet data ipw60r041 6R041 infineon MOSFET parameter test JESD22 if444 c6 transistor uc pfc
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R041C6 Data Sheet Rev. 2.0, 2010-03-29 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R041C6 Description
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IPW60R041C6
6r041c6
IPW60R041C6
6r041c6 mosfet data
ipw60r041
6R041
infineon MOSFET parameter test
JESD22
if444
c6 transistor
uc pfc
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK3600-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)
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Original
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2SK3600-01L
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2140 9 '&6 32: 5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Commercial and Consumer Systems • 3V DCS1900 (PCS) Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • 3V DCS1800 (PCN) Cellular Handsets
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RF2140
DCS1800
DCS1900
RF2140
DCS1800/1900
1700MHz
2000MHz
10dB/5W
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PDF
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6r950c6
Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6
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IPx60R950C6
IPD60R950C6,
IPB60R950C6
IPP60R950C6,
IPA60R950C6
6r950c6
IPA60R950C6
IPP60R950C6
VDD480V
IPB60R950C6
IPD60R950C6
JESD22
6r950c
6R950
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PDF
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65E6280
Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6
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IPx65R280E6
IPA65R280E6,
IPB65R280E6
IPI65R280E6,
IPP65R280E6
IPW65R280E6
65E6280
to247 pcb footprint
IPW65R280E6
Diode SMD SJ 66A
ipw65r
ipa65r
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PDF
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6r600e6
Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6
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IPx60R600E6
IPD60R600E6,
IPP60R600E6
IPD60R600E6
6r600e6
infineon marking TO-252
E6 DIODE
IPD60R600E6
IPA60R600E6
diode smd E6
JESD22
infineon
Diode SMD SJ 19
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PDF
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6R190C6
Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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Original
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
726-IPB60R190C6
IPB60R190C6
6R190C6
6r190
6r190c
SMD TRANSISTOR MARKING 9D
IPA60R190C6
IPW60R190C6
6r190c6 infineon
6R19
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PDF
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diode marking SJ
Abstract: JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R070C6
diode marking SJ
JESD22
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PDF
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65C6070
Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
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IPW65R070C6
726-IPW65R070C6
65C6070
infineon MOSFET parameter test
diode marking SJ
65C6
ipw65r
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PDF
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China RoHS Label Information
Abstract: BI Technologies
Text: BI Technologies ECD Division China RoHS label information 5/9/2007 Intended as reference data for China RoHS label creation, to be combined with English/Chinese form Specific P/N's should be substituted for part series on actual labels Author - Eric Arnold, Material Development Manager
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SJ/T11363-2006
China RoHS Label Information
BI Technologies
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6R190E6
Abstract: IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6
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IPx60R190E6
IPP60R190E6,
IPA60R190E6
IPW60R190E6
6R190E6
IPA60R190E6
IPW60R190E6
6r190e
6r190
IPP60R190E6
JESD22
transistor ag qs
id95
ID95 MARKING
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PDF
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6R380e6
Abstract: IPA60R380E6 IPP60R380E6 IPA60R380C6 JESD22 IPP60R380E TO-220 package thermal resistance
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R380E6, IPA60R380E6
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Original
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IPx60R380E6
IPP60R380E6,
IPA60R380E6
6R380e6
IPA60R380E6
IPP60R380E6
IPA60R380C6
JESD22
IPP60R380E
TO-220 package thermal resistance
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PDF
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6R520E6
Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6
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Original
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IPx60R520E6
IPP60R520E6,
IPA60R520E6
6R520E6
IPA60R520E6
JESD22
TO-220 package thermal resistance
6r520
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PDF
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6R280E6
Abstract: IPA60R280E6 IPP60R280E6 IPW60R280E6 6r280 IPx60R280E6 JESD22
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R280E6, IPA60R280E6
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Original
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IPx60R280E6
IPP60R280E6,
IPA60R280E6
IPW60R280E6
6R280E6
IPA60R280E6
IPP60R280E6
IPW60R280E6
6r280
IPx60R280E6
JESD22
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PDF
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diode 1n4637
Abstract: in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619
Text: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z
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OCR Scan
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1N4549
1N4550
1N4551
1N4552
1N4553
1N4554
1N4555
1N4556
1N4557
1N4558
diode 1n4637
in4632
zener diode in4560
1N41
IN4620
IN4550
IN4624
1n41113
1N4611A
IN4619
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PDF
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A1381 transistor
Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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OCR Scan
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NPN110.
BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
A1381 transistor
2N5036
CA3036
NF Amp NPN Silicon transistor TO-3
MA3232
20C26
2N5034 package
2N5035
L29a
2N5034
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PDF
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Untitled
Abstract: No abstract text available
Text: l u v s t * * * - !* l&MXJ'Jyif Low Noise Bridge Single In-line Package Bridge Diode • ^ ^ H l OUTLINE DIMENSIONS LN1VB60 600V 1.2A 45 £ 1 • S IP llv t r - V «a± *nîEowcB, MMfàM RATINGS Absolute Maximum Ratings (i&Âw*v>^ê- T/ =25°C m s Item
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OCR Scan
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LN1VB60
LN1VB60
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PDF
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sj437
Abstract: SBA100-04ZP 2sk2435 2SJ456 2sk2532
Text: SAfiYO New Product New Package,ZP F*ow e t~ ’ZP" o n 1 y 2. 5 m m fcioo Mount. SANYO ne w p a c k a g e ZP o f t h e n e e d f o r s m a l l e r a nd surface thinner mount t y p e s yst ems. holds the power chip of 50W w i t h i n ♦ A d o p t i n g s t e p - s e c t i o n e d lead-frame s t r u c t u r e e l i m i n a t e s s o l d e r br i dge
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OCR Scan
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SBA100-04ZP
SBA160-04ZP
0213T
sj437
2sk2435
2SJ456
2sk2532
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PDF
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NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
NS1000 n
CA3036
BVCEO-90V
2CY38
transistor A431
2n1613 replacement
A431
UD1001
NS1862
QD401-78
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PDF
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