Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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B5817W
Abstract: B5818W B5819W Diode SJ Sj diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W
B5819W
Diode SJ
Sj diode
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Diode SJ 14
Abstract: DIODE marking Sl B5817WS-5819WS B5818WS B5819WS Diode SJ diode marking SJ B5817WS diode reverse voltage protection B5819WSSL
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
Diode SJ 14
DIODE marking Sl
B5817WS-5819WS
B5819WS
Diode SJ
diode marking SJ
B5817WS
diode reverse voltage protection
B5819WSSL
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B5817W-5819W
Abstract: DIODE marking Sl B5819W B5817W B5818W diode reverse voltage protection Schottky Diode 30V 1A SOD123 1A diode low reverse current
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W-5819W
DIODE marking Sl
B5819W
B5817W
diode reverse voltage protection
Schottky Diode 30V 1A SOD123
1A diode low reverse current
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Untitled
Abstract: No abstract text available
Text: SKKE 600F THYRISTOR BRIDGE,SCR,BRIDGE WXHY WXXY SJXYH Z =P@ % '40124C4 I0-C. 3 , )*+2*C)CB ):.,0+2)*5 W W SJ%W Z >O@ % 'B2*< ?[@¥ P@ AM¥ U( Z [P ]$5 ?Q@@ ?Q@@ Symbol Conditions SJ%W SJHY 2a+ SEMIPACK Fast Diode Modules SKKE 600F H^^N O@@J?Q Values Units
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40124C4
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ
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Original
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PDF
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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1N4475
Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Text: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded
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1N4464
1N4494
1N4464US
1N4494US
1N4475
1N4465
1N4469
1N4474
1N4464 Zener diode
zener diode 1N4464
1N4478
1N4477
1N4471
1N4479
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Untitled
Abstract: No abstract text available
Text: 1N5711-1 1N5711US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5111, REV. - SJ SX SV SS SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package Metallurgically bonded Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D
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1N5711-1
1N5711US-1
1N5711-1,
DO-35
1N5711,
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RJL60S5
Abstract: No abstract text available
Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPE
R07DS0817EJ0001
PRSS0004AE-B
RJL60S5
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RJL60S5
Abstract: No abstract text available
Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET Built-in fast recovery diode Low on-resistance RDS on = 0.150 typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
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RJL60S5DPK-M0
R07DS0818EJ0002
PRSS0004ZH-A
RJL60S5
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1N3595-1US
Abstract: JANTXV 1N3595 equivalent 1n3595-1 1N 457 equivalent 1N3595US JANTX 1N3595 jantx1n3595-1 1N3595-1 JANTX JANS1N3595US melf diode D-5D
Text: 1N3595-1, 1N3595US-1 Standard VF CONTROLLED DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Vf Controlled Diodes Qualified per MIL-PRF-19500/241
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1N3595-1,
1N3595US-1
MIL-PRF-19500/241
MIL-PRF-19500/241
MIL-PRF19500/241
1N3595-1US
JANTXV 1N3595 equivalent
1n3595-1
1N 457 equivalent
1N3595US
JANTX 1N3595
jantx1n3595-1
1N3595-1 JANTX
JANS1N3595US
melf diode D-5D
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1n4109-1
Abstract: zener diode 10 sv
Text: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1
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1N4100-1/UR-1
1N4135-1/UR-1
1N41001/UR
1N41011/UR
1N41021/UR
1N41031/UR
1N41041/UR
1N41051/UR
1N41061/UR
1N41071/UR
1n4109-1
zener diode 10 sv
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Diode SJ 56
Abstract: diode sj pj+939+diode
Text: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ
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SK50GD12T4T
Diode SJ 56
diode sj
pj+939+diode
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pj 72 diode
Abstract: Diode SJ 12 pj 86 diode Diode SJ
Text: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ
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SK75GD12T4T
pj 72 diode
Diode SJ 12
pj 86 diode
Diode SJ
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pj 56 diode
Abstract: semikron 3Y diode PJ diode ph9a
Text: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ
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SK100GD12T4T
pj 56 diode
semikron 3Y diode
PJ diode
ph9a
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Untitled
Abstract: No abstract text available
Text: E R E 2 4 - 0 6 • E R E 7 4 - 0 6 3 o a •6 0 0 V • Outline Drawings FAST RECOVERY DIODE : Features <i"<—î/a 'sj-'y y • Glass passivated chip High reverse voltage capability Stud mounted • Applications • • • Switching power supplies Free-wheel diode
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OCR Scan
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PDF
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l95t/R89
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NA42
Abstract: No abstract text available
Text: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.
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OCR Scan
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1SV303
C2V/C25V
NA42
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV302 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 2 CATV TUNING C%sj! C2 5 V = 17.5 • High Capacitance Ratio : • Low Series Resistance : rs = 1.05Q Typ. • Useful for Small Size Tuner. U nit in mm (Typ.)
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1SV302
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c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class
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OCR Scan
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PDF
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ERC81-004
e18-ts
95t/R89
Shl50
c81-004
c81 004
Diode C81 004
C81004
ERC81
T151
T460
T810
T930
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR B10A45VI TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE SW ITC H IN G M O D E POW ER SUPPLY A PPLICATIO N. C O N V E R T E R & CH O PP E R A PPLICATION. SJ FEA T U RE S ° - e >r • A verage O utput R ectified C urrent - Q D IM
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OCR Scan
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B10A45VI
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