5a2 DIODE
Abstract: No abstract text available
Text: SKN 240, SKR 240 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Stud Diode Rectifier Diode ! ! * * " * ) * " 05 < )* 5 1 + > < )% ?72
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Abstract: No abstract text available
Text: SKN 240, SKR 240 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode ! ! * * " * ) * " 05 < )* 5 1 + > < )% ?72 &' )* * & )*(* &' )*( & )*( &' )*() & )*() &' )*(* & )*(*
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diode skn 240 semikron
Abstract: No abstract text available
Text: SKN 240, SKR 240 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode ! ! * * " * ) * " 05 < )* 5 1 + > < )% ?72 &' )* * & )*(* &' )*( & )*( &' )*() & )*() &' )*(* & )*(*
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diode skn 240 semikron
Abstract: SKN240 Semikron SKR
Text: SKN 240, SKR 240 Stud Diode Rectifier Diode ! ! * * " * ) * " 05 < )* 5 1 + > < )% ?72 &' )* * & )*(* &' )*( & )*( &' )*() & )*() &' )*(* & )*(* &' )*(" & )*("
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k3m6
Abstract: K3-M8 b92 diode semikron SKN 71 skn 220 diode skn 71 Semikron SKR 26 /12 Semikron SKR 71 SKR 870 heatsink SKN
Text: Summary of Types continued Avalanche Rectifier Diodes Type VRRM V(BR) VRSM min. V IFRMS A IFSM i2t sin. 10 ms 10 ms 180 25 °C 25 °C A A2s IFAV @ Tcase A °C Case Page SKa 1 1 300 1 700 3 1,15 451) 60 18 E 33 SKa 3 1 300 1 700 6,7 1,8 451) 180 162 E 34
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SEMISTACK IGBT
Abstract: semikron B6C SKN 21 DIODE Semikron Silicon Controlled Rectifier w3c2 SkiiP 10 B6u b2hk semikron diode skn 21 three phase fully controlled bridge converter Semikron semipont b6u
Text: ID Tcase = . °C, full conduction VDRM VRSM VRRM V 40 A (92 °C) 40 A (92 °C) 100 A (84 °C) 60 A (86 °C) 100 A (84°C) 400 800 1200 1400 1600 SKCH 40/04 40/08 40/12 40/14 40/16 SKBT – 40/08 40/12 40/14 – SKDH – 100/08 100/12 100/14 – SKDT 60/04
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P13A/125
R4A/120
P1A/120
P1A/120
P3/180
SEMISTACK IGBT
semikron B6C
SKN 21 DIODE
Semikron Silicon Controlled Rectifier
w3c2
SkiiP 10 B6u
b2hk semikron
diode skn 21
three phase fully controlled bridge converter
Semikron semipont b6u
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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semikron SKa 6/20
Abstract: diode SKN SKN 130/12 SKR 130/12 Semikron 240/04 diode data semikron skn 50/04 Semikron sk 1 SEMIKRON SKN 130/12 SKR 130/12 SKN 50/08 SKN 21 DIODE diode ska 6/20
Text: VRSM VRRM Rectifier Diodes IFRMS maximum values for continuous operation 3A 6,7 A SK 1 SKa 1 IFAV (sin. 180; Tamb = 45 °C) 1,15 A 1,8 A V 1000 1200 1400 1600 Types Cmax. µF Rmin. Ω Types Cmax. µF Rmin. Ω SK 1/10 SK 1/12 SK 1/14 SK 1/16 500 400 300
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Nm/35
Nm/22
semikron SKa 6/20
diode SKN
SKN 130/12 SKR 130/12
Semikron 240/04 diode data
semikron skn 50/04
Semikron sk 1
SEMIKRON SKN 130/12 SKR 130/12
SKN 50/08
SKN 21 DIODE
diode ska 6/20
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skm 152 ga
Abstract: Semitrans M SKD 100 GAL semikron skt 40/12 semikron skkt 15/12 semikron 14 MD skm 200 gb 122 d semikron skm 152 ga semikron skkd 15/12 SKN 170 semikron skkt 132/ 14/ E
Text: SEMIBOX Standard Packing Units Component Types Standard Packing Unit Content Box Dimensions Weight compo- accesnents sories 1 mm x mm x mm kg 1. SEMIPACK Thyristor/Diode Modules SEMIPACK 0 SEMIPACK 1 SEMIPACK 2 SEMIPACK 3 SEMIPACK 4 SEMIPACK 5 SKKD 15; SKKE 15; SKKH 15;
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SKNa 26
Abstract: SKR 870 diode SKNa b 250 c 2200/3500 rectifier skr 320-P diode skn 71 849B semikron 28 diode SKN a 26/17 semikron SKa 6/20
Text: 5HFWLILHU 'LRGHV HDWXUHV 7\SLFDO $SSOLFDWLRQV 6PDOO SODVWLF SDFNDJHG GLRGHV 5HYHUVH YROWDJHV XS WR 9 $OOSXUSRVH UHFWLILHU GLRGHV $[LDO OHDG GLRGHV WDSHG IRU DXWRPDWLF LQVHUWLRQ 6QXEEHU GLRGHV 7KUHDGHG VWXG GLRGHV 5HYHUVH YROWDJHV XS WR 9
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skm 200 gb 122 d
Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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SKM 400GB062D
Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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300GD063D
125GD127D
85GD127D
350GD063DM
250GD128D
350GD128DM
400GD063D
400GD128D
500GD128DM
SKM 400GB062D
62792
02634
SKM 400GD063D
heatsink for skkt 72
semikron skt 140
IEC 974-1
Semitrans M SKD 100 GAL 124d
6822
semikron skkt 31
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Untitled
Abstract: No abstract text available
Text: SKS 355N B6HK 240 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C) PLOSS
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P1/200
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Untitled
Abstract: No abstract text available
Text: SKS 215N B6HK 145 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C) PLOSS
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P1/150
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RC15B
Abstract: No abstract text available
Text: SKS 425N B6U 285 V16 Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C) PLOSS
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P1/150
RC15B
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Abstract: No abstract text available
Text: SKS 425N B6U 285 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS Maximum stack power PTOTAL Stack power loss (TAMBIENT = 35°C)
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Abstract: No abstract text available
Text: SKS 215N B6HK 145 V16 SU Electrical Characteristics Symbol Conditions min Electrical Data TAMBIENT = 35°C ; No overload Maximum DC current ID Maximum AC voltage +/-10% VAC DC Bus voltage VBUS PTOTAL Maximum stack power Stack power loss (TAMBIENT = 35°C)
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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0119 Solar Lamp Controller
Abstract: transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M
Text: 24 Electronic Components pp751-856:Layout 1 24/1/14 16:12 Page 751 Electronic Components CAPACITORS OPTOELECTRONICS Ceramic Capacitors Tantalum Capacitors Variable Capacitors 752 759 759 DISCRETE SEMICONDUCTORS Bridge Rectifier Diodes Diodes Transistors 766
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pp751-856
127mm
525mm
1550kHz
280kHz
2000m)
100mm
0119 Solar Lamp Controller
transistor SMD W06 78
NXP Semiconductors 70150
TYN225
WH1602A
Matsua microswitch 250V AC
IRF9520 Samsung
iskra BT 200
MOTOR FM 270R
74HC00M
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diode skn 21
Abstract: SKN 21 DIODE K3M12 SK 782 k3m6 diode skn 240 semikron semikron sk 240 000E-19 K3-M12 semikron k3m12 i s
Text: s e MIKRON Section 8: Rectifier Diodes Sum m ary of Types Type • New type 1 N 4001 . 4007 G SK 1 SK 1 G SK 3 V rrm V rsm Ifrms IfaV sin. 180 V A A 50 . 1 000 3 @ T case °C 1,1 751> Ifsm 10 ms 25 °C i2t 10 ms 25 °C A A2s 35 6,1 E 32 B 8-5 B 8-9 1 200 . 1 600
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1/200-M
P8/180
diode skn 21
SKN 21 DIODE
K3M12
SK 782
k3m6
diode skn 240 semikron
semikron sk 240
000E-19
K3-M12
semikron k3m12 i s
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KT-132
Abstract: skkt 40 12 3208A KT132 SKNH132 skkt162
Text: SEMIKRON V rsm V rrm V drm Itrms m axim um valu e s fo r continuous operation 220 A 250 A | 220 A | 250 A (dv/dt)cr Itav (sin. 18C ; Tease = 80 °C' ) 168 A 148 A 148 A V /jis 168 A V V SKKT SKKT SKKH SKKH 900 800 500 132/08 D 162/08 D 132/08 D 1 62/08 D
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SKKT132
T1321)
SKKT162
SKKH132
SKNH1321)
SKKH162
P3/180
P3/180F
16/20i
KT13210
KT-132
skkt 40 12
3208A
KT132
SKNH132
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Abstract: No abstract text available
Text: s e M IK R D n V rsM V rrm dv/ V dhm dt cr V 900 1300 1300 1500 1700 1900 2100 2300 ItAV (Sin. 180; Tease = •- .) V/(iS 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C) V 800 1200 1200 1400 1600 1800 2000 2200 SKKT 131/08 D 131/12 D 131/12 E
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Tyj1130
SKKE201
013bfc
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kp50a
Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
Text: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)
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ZLKP100A
ZLKP150A
ZLKP200A
ZLKP250A
ZLKP300A
kp50a
kp20a
ZP200A
KP300A
KP200A
ZP300A
kp5a
ZP20A
zp5a
KP100a
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