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    DIODE SMA MARKING CODE J4 Search Results

    DIODE SMA MARKING CODE J4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SMA MARKING CODE J4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BZD17C SERIES Taiwan Semiconductor CREAT BY ART Voltage Regulator Diodes FEATURES - Silicon zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - Moisture sensitivity level: level 1, per J-STD-020


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    BZD17C J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1406033 PDF

    Untitled

    Abstract: No abstract text available
    Text: BZD17C SERIES CREAT BY ART 0.8 Watts Voltage Regulator Diodes Sub SMA Features — Silicon zener diodes — Low profile surface-mount package — Zener and surge current specification — Low leakage current — Excellent stability — High temperature soldering guaranteed:


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    BZD17C BZD17C11P PDF

    diode K6 sma

    Abstract: No abstract text available
    Text: BZD17C SERIES CREAT BY ART 0.8 Watts Voltage Regulator Diodes Sub SMA Features — Silicon zener diodes — Low profile surface-mount package — Zener and surge current specification — Low leakage current — Excellent stability — High temperature soldering guaranteed:


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    BZD17C BZD17C11P diode K6 sma PDF

    zener Marking K7

    Abstract: BZD17C BZD17C120P BZD17C36P Diodes Marking K6 Diodes Marking K7 BZD17C12P diode L2.70 C12P C27P
    Text: BZD17C SERIES 0.8 Watts Voltage Regulator Diodes Pb RoHS Sub SMA COMPLIANCE Features — — — — — — Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability High temperature soldering:


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    BZD17C 260oC zener Marking K7 BZD17C120P BZD17C36P Diodes Marking K6 Diodes Marking K7 BZD17C12P diode L2.70 C12P C27P PDF

    bu 3 GDG 125

    Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


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    C398BB02 C398BB03 bu 3 GDG 125 marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4250 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Reflective Product Description The PE4250 is a HaRP™-enhanced Reflective SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a


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    PE4250 PE4250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4250 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Reflective Product Description The PE4250 is a HaRP™-enhanced Reflective SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a


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    PE4250 PE4250 PDF

    PE4251

    Abstract: PE4251MLI PE4251MLI-Z PE4250 PE42510 33MIL
    Text: Product Specification PE4251 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Absorptive Product Description The PE4251 is a HaRP™-enhanced Absorptive SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a


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    PE4251 PE4251 PE4251MLI PE4251MLI-Z PE4250 PE42510 33MIL PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4251 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Absorptive Product Description The PE4251 is a HaRP™-enhanced Absorptive SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a


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    PE4251 PE4251 PDF

    PE4250

    Abstract: No abstract text available
    Text: Product Specification PE4250 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Reflective Product Description The PE4250 is a HaRP™-enhanced Reflective SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a


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    PE4250 PE4250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4251 SPDT UltraCMOS RF Switch 10 – 3000 MHz, Absorptive Product Description The PE4251 is a HaRP™-enhanced Absorptive SPDT single pole double throw RF Switch for use in general switching applications and mobile infrastructure. This device offers a


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    PE4251 PE4251 PDF

    bu 450 GDF

    Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


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    C3B04 bu 450 GDF SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714 PDF

    bu 450 GDF

    Abstract: diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A
    Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage


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    C3B04 bu 450 GDF diode gde 78 J15A GEZ DIODE SMA marking code LG GGG 92 marking sm J11A J14A J16A PDF

    ecg catalog

    Abstract: SMD EK 742 106-1208-EV panasonic film capacitor marking 10k ohm 16 pin dip resistor network SMD Thick Film Chip Resistor DIODE smd marking R12 Mountain Switch 742C163221JTR 16TRM
    Text: 5 4 C8 9 21 GND C4 8 20 GND C2 7 19 GND C1 6 18 GND C0.5 5 17 NC LE 4 16 NC DATA 3 15 NC CLK 2 14 NC NC 1 2 3 4 5 3 2 1 10 9 8 7 CA3 100pF 1 2 3 4 5 6 7 8 PUP2 R11 470 Ohm C16 C8 C4 C2 C1 C0.5 PS LE RN2 220 10 9 8 7 470 Ohm D 16 15 14 13 12 11 10 9 J8 CON3


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    100pF 106-1208-EV 10ebLib/CTS/Web 20Data/741-746 20Series com/pdf/4600X P10KJTR-ND 301-0-RC P470CFCT-ND 301-10K-RC ecg catalog SMD EK 742 106-1208-EV panasonic film capacitor marking 10k ohm 16 pin dip resistor network SMD Thick Film Chip Resistor DIODE smd marking R12 Mountain Switch 742C163221JTR 16TRM PDF

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801 PDF

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG PDF

    M6 SMD MARKING CODE

    Abstract: SMD marking code R1D smd diode marking M4 SMA transistor SMD R1D marking R1E marking R2D smd codes marking c9 R2h DIODE smd marking m4 diode SMD MARKING CODE d6
    Text: 5 4 3 2 1 CA4D 100pF 5 7 +3.3V TP9 +3.3V D 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 1 D R22A R22B R22C R22D R22E R22F R22G R22H R11A R11B R11C R11D R11E R11F R11G R11H R12A R12B R12C R12D R12E R12F R12G R12H 220 220 220 220 220 220 220 220 220 220 220


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    100pF PE97022 LV142MLN M3500-2032 OSC-3A0-20MHz M6 SMD MARKING CODE SMD marking code R1D smd diode marking M4 SMA transistor SMD R1D marking R1E marking R2D smd codes marking c9 R2h DIODE smd marking m4 diode SMD MARKING CODE d6 PDF

    RPACK 10k x 9

    Abstract: Zener diode smd marking code C24 LV142MLN R22D control PDU board PCB DIODE smd marking R14 j35 SMD Marking Code J502-ND Zener diode smd marking code S3 CAP-0603 dni
    Text: 5 4 3 2 1 +3_3V +3_3V J2 1 2 +3_3V TP9 R12-F R12-G R12-H 220 220 220 220 9 +3_3V 10 1 2 3 4 5 6 7 8 6 5 4 3 2 1 44 43 42 41 40 16 15 14 13 12 11 10 9 DATA 6 CLK 5 XX 4 E_WR 3 ENH 2 X 1 2 7 6 4 5 1 3 TP3 1 TP1 220 11 C30 R24 51 22pF 220 12 C45 R20 F_IN 1 220


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    R12-G R12-H R10-B R10-C 100pF R10-D PE97042 AD797 96GHz-3 20MHz RPACK 10k x 9 Zener diode smd marking code C24 LV142MLN R22D control PDU board PCB DIODE smd marking R14 j35 SMD Marking Code J502-ND Zener diode smd marking code S3 CAP-0603 dni PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Specification PE45450 UltraCMOS Power Limiter 9 kHz–6 GHz Product Description • UltraCMOS monolithic drop-in solution  ifi   with no external bias components reducing design complexity Adjustable power limiting threshold


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    PE45450 DOC-44314-3 PDF

    6Bp SMD

    Abstract: 6BT SMD W17 marking code sot 23 marking w18 sot23-5 marking code E5 SMD ic sot23-5 smd marking e5 5Pin smd marking sot23 W16 smd transistor 6Bp sot marking code w17 Z5238BLT1
    Text: • The user can use the on-board clock source or provide 1.0 Design Description their own clock source and operate the ADC under various sampling frequencies ■ The analog input has two ports, one for single-ended sources and one for differential sources


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    CSP-9-111S2) CSP-9-111S2. RD-143 6Bp SMD 6BT SMD W17 marking code sot 23 marking w18 sot23-5 marking code E5 SMD ic sot23-5 smd marking e5 5Pin smd marking sot23 W16 smd transistor 6Bp sot marking code w17 Z5238BLT1 PDF

    CBJE130-1

    Abstract: XICON Capacitor SMD EK 742 DigiKey Electronics Catalog sip10 "resistor array" mouser 10k ohm 16 pin dip resistor network smd diode MARKING D8 SMA SMD Capacitor symbols smd code RN4
    Text: 5 4 GND C1 6 18 GND C0_5 5 17 NC LE 4 16 NC DATA 3 15 NC CLK 2 14 NC NC 1 3 2 1 CA3 100pF 2 3 4 5 3 2 1 C16 C8 C4 C2 C1 C0_5 PS LE RN2 220 10 9 8 7 1 2 3 4 5 6 7 8 J8 CON3 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 RN3 470 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7


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    100pF 106-1208-EV J502-ND S2021-36-ND 20Data/741-746 20Series com/pdf/4600X 20Components/Web 20Data/142-0701-801, CBJE130-1 XICON Capacitor SMD EK 742 DigiKey Electronics Catalog sip10 "resistor array" mouser 10k ohm 16 pin dip resistor network smd diode MARKING D8 SMA SMD Capacitor symbols smd code RN4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE45140 UltraCMOS Power Limiter 20 MHz–2 GHz Product Description The PE45140 is a HaRP technology-enhanced RF power limiter designed for use in tactical and military communications receivers, land mobile radio and other high performance power limiting applications.


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    PE45140 PE45140 DOC-44014-4 PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF

    marking B26 diode SCHOTTKY

    Abstract: marking B32 diode SCHOTTKY marking B28 diode SCHOTTKY Schottky Diode B29 RNE-64BS-S-TG 1020J1C SOURIAU rm5 inductors marking B25 diode SCHOTTKY 001112
    Text: 777 TDC1020 High-Speed Monolithic A/D Converter Features 10-Bit, 20Msps 20Msps Conversion Rate • 10-Bit Resolution • Overflow Flag The TRW TDC1020 is a 20Msps MegaSample Per Second full-parallel (flash) analog-to-digital converter, capable of converting a video signal into a stream of


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    TDC1020 10-Bit, 20Msps TDC1020 10-bit 777TM 20Msps 1385A marking B26 diode SCHOTTKY marking B32 diode SCHOTTKY marking B28 diode SCHOTTKY Schottky Diode B29 RNE-64BS-S-TG 1020J1C SOURIAU rm5 inductors marking B25 diode SCHOTTKY 001112 PDF