smd mosfet z8
Abstract: 2SJ360
Text: MOSFET SMD Type MOS Field Effect Transistors 2SJ360 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 VGS=-4V,ID=-1.0A 1 High forward transfer admittance :|Yfs|=0.9S(Typ.) A +0.1 0.53-0.1 Max.)(VDS=-60V) +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1
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2SJ360
OT-89
smd mosfet z8
2SJ360
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Diode SMA marking code ye
Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)
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TV04A5V0-HF
TV04A441-HF
SMA/DO-214AC
QW-JTV01
Diode SMA marking code ye
smd diode marking sG 13
DO-214AC diode marking SD
smd code marking YL
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SOT-23
Abstract: No abstract text available
Text: P-Channel SMD MOSFET Formosa MS FMBSS84 List List. 1 Package outline. 2 Features. 2
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FMBSS84
120sec
260sec
30sec
DS-231142
SOT-23
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smd zG sot 23
Abstract: smd marking Yd transistor smd zG smd tr yc smd marking YB ZG SOT-23 smd marking YK sot-23 marking zj smd transistor marking zg smd transistor yc
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR ZENER DIODES CZMK3V3-39V SOT-23 Formed SMD Package 3 3 Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 2 1 Dual Zener Diodes, Common Cathode ABSOLUTE MAXIMUM RATINGS Per Diode Ta=25°C Unless Specified Otherwise
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CZMK3V3-39V
OT-23
C-120
39VRev250102E
smd zG sot 23
smd marking Yd
transistor smd zG
smd tr yc
smd marking YB
ZG SOT-23
smd marking YK
sot-23 marking zj
smd transistor marking zg
smd transistor yc
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smd zG sot 23
Abstract: ZG SOT-23 smd marking YB smd marking ZG SOT-23 MARKING ZX sot-23 smd tr yc sot-23 marking zj ZH SOT-23 smd marking ZH smd marking Yd
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILIICON PLANAR ZENER DIODES CZMK3V3-39V SOT-23 Formed SMD Package 3 3 Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 2 1 Dual Zener Diodes, Common Cathode ABSOLUTE MAXIMUM RATINGS Per Diode Ta=25°C Unless Specified Otherwise
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ISO/TS16949
CZMK3V3-39V
OT-23
43ers
C-120
39VRev250102E
smd zG sot 23
ZG SOT-23
smd marking YB
smd marking ZG SOT-23
MARKING ZX sot-23
smd tr yc
sot-23 marking zj
ZH SOT-23
smd marking ZH
smd marking Yd
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ic MARKING QG
Abstract: SMD IC MARKING NC smd diode marking 79 KTS1012 PF380 SMD 6_A
Text: IC IC SMD Type Load Switching Applications KTS1012 TSSOP-8 Unit: mm Features Low ON resistance. 4.0V drive. Mount height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-to-Source Voltage VDSS -30 V
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KTS1012
1000mm2X0
S1012
ic MARKING QG
SMD IC MARKING NC
smd diode marking 79
KTS1012
PF380
SMD 6_A
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2SJ0582
Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon P-channel power MOSFET 2SJ0582 TO-252 Features Avalanche energy capability guaranteed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 High-speed switching Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15
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2SJ0582
O-252
J0582
2SJ0582
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SMD IC MARKING NC
Abstract: ic MARKING QG 8a smd Marking 8A S133 KSS133 KSS1 2S133 1421A
Text: IC IC SMD Type Load Switching Applications KSS133 Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-to-Source Voltage Parameter VDSS -20 V Gate-to-Source Voltage VGSS 10 V Drain Current DC
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KSS133
1200mm2X0
SMD IC MARKING NC
ic MARKING QG
8a smd
Marking 8A
S133
KSS133
KSS1
2S133
1421A
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K3723
Abstract: ic MARKING QG MARKING QG SMD IC MARKING NC 2SK3723 SMD Transistors nc
Text: Transistors IC SMD Type N-channel Enhancement Mode MOSFET 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2
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2SK3723
O-263
K3723
K3723
ic MARKING QG
MARKING QG
SMD IC MARKING NC
2SK3723
SMD Transistors nc
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Untitled
Abstract: No abstract text available
Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance 2 +0.1
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2N7002K
OT-23
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702 TRANSISTOR smd
Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance
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2N7002K
OT-23
702 TRANSISTOR smd
702 TRANSISTOR smd SOT23
70.2 TRANSISTOR smd
702 5 TRANSISTOR smd
DIODE smd marking 702
smd transistor 702
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smd transistor marking PA
Abstract: "marking PA" SMD DIODE zener SOT89 20 SMD DIODE zener SOT89 marking PA 2SJ179
Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ179 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 MAX.@VGS=-4.0V,ID=-0.5A RDS on =1.0 MAX.@VGS=-10V,ID=-0.5A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 2.60 +0.1 -0.1 Bidircetional Zener Diode for protection is incorporated betweent
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2SJ179
OT-89
smd transistor marking PA
"marking PA"
SMD DIODE zener SOT89 20
SMD DIODE zener SOT89
marking PA
2SJ179
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Untitled
Abstract: No abstract text available
Text: Product specification 2SK3723 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 High avalanche resistance
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2SK3723
O-263
K3723
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zener diode SMD marking code 27 4F
Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
zener diode SMD marking code 27 4F
smd diode schottky code marking 2F
smd zener diode code 5F
panasonic MSL level
smd zener diode code a2
SMD ZENER DIODE a2
smd zener 27 2f
SMD zener marking code 102
A2 SMD
zener SMD MARK A1
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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cmpak6
Abstract: SMD MARKING RFC 1SV70 TBB1010 TBB1010KMTL-E
Text: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0500 Rev.5.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2 Suitable for World Standard Tuner RF amplifier.
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TBB1010
REJ03G0844-0500
PTSP0006JA-A
TBB1010
cmpak6
SMD MARKING RFC
1SV70
TBB1010KMTL-E
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ADE-208-1607B
Abstract: 1607B 1SV70 TBB1010 TBB1010KMTL-E
Text: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0400 Previous ADE-208-1607B Rev.4.00 Aug.10.2005 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2
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TBB1010
REJ03G0844-0400
ADE-208-1607B)
PTSP0006JA-A
TBB1010
ADE-208-1607B
1607B
1SV70
TBB1010KMTL-E
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Untitled
Abstract: No abstract text available
Text: LM2756 www.ti.com SNVS504B – JULY 2007 – REVISED DECEMBER 2007 LM2756 Multi-Display Inductorless LED Driver with 32 Exponential Dimming Steps in micro SMD Check for Samples: LM2756 FEATURES 1 • 2 • • • • • • • Drives up to 8 LEDs with up to 30mA of Diode
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LM2756
SNVS504B
LM2756
21mm2
615mm
015mm
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Untitled
Abstract: No abstract text available
Text: LM2755 www.ti.com SNVS433B – OCTOBER 2007 – REVISED MAY 2012 LM2755 Charge Pump LED Controller with I2C Compatible Interface in Micro SMD Check for Samples: LM2755 FEATURES 1 • • • 2 • • • • 90% Peak Efficiency Total solution size < 13mm2
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LM2755
SNVS433B
LM2755
13mm2
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Untitled
Abstract: No abstract text available
Text: LM2755 www.ti.com SNVS433B – OCTOBER 2007 – REVISED MAY 2012 LM2755 Charge Pump LED Controller with I2C Compatible Interface in Micro SMD Check for Samples: LM2755 FEATURES 1 • • • 2 • • • • 90% Peak Efficiency Total solution size < 13mm2
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LM2755
SNVS433B
LM2755
13mm2
18-bump
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.
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OCR Scan
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D1FL40
D1FL40
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321 435-2
Abstract: smd code Yj 33 B3A marking code ZL2019
Text: AMD £ 1 REVISIONS DESCRIPTION LTR DATE Change absolute maximum rating o£ I S O u r c e * Change figure 4. Editorial changes throughout. APPROVED YR- HO -O A M.A. Frye 3-09-27 Add device types 05 and 06. Changes to table I. Editorial changes throughout.
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MA29C827A/BKA
AH29C827A/B3A
AH29C828A/BLA
AM29C828A/BKA
AH29C828A/B3A
29C827A/828A
321 435-2
smd code Yj 33
B3A marking code
ZL2019
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smd diode marking UJ
Abstract: smd diode marking code UJ smd marking 7m smd diode code I5 smd marking 5R
Text: Schottky Barrier Diode single Diode m n m Package DG1H3A o u tlin e G1F U nit I mm W eight 0.01 1r T yp 30V 1.5A 3.5 Feature |B 1 7 • Ö 'J 'IÜ S M D • Ultra-sm all S M D • i8 ü § y = 0 .8 m m • Ultla-thin PKG=0.8mm • Low V f= 0 .3 6 V • V
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/i77U-ffiffrRGlt
12injciOl
smd diode marking UJ
smd diode marking code UJ
smd marking 7m
smd diode code I5
smd marking 5R
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