JST SOT-23
Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805
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STEVAL-ISS001V1
BAS16
100PPM
JST SOT-23
smd transistor l6
smd transistor 2y
R135 VARISTOR
103 resistor pack
diode zener c55
2Y DIODE SMD
DIODE SMD J9
transistor c114
diode zener c72
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SMD TRANSISTOR L6
Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155
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STEVAL-ISS001V2
BAS16
100PPM
330UH
12X9MM
UBB-4R-D10T-1
SMD TRANSISTOR L6
transistor SMD Y1
y1 smd transistor
SMD TRANSISTOR Y1
1P smd transistor
y2 smd transistor
resistor smd 103
transistor smd R55
transistor smd j6
L6 smd transistor
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LED36-SMD5R
Abstract: No abstract text available
Text: LED36-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD5R
LED36-SMD5R
300x300
150-200mA
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Untitled
Abstract: No abstract text available
Text: LED35-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.55 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED35-SMD3
LED50-SMD3
300x300
150-200mA
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Untitled
Abstract: No abstract text available
Text: LED34-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED34-SMD3
LED50-SMD3
300x300
150-200mA
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LED36-SMD5
Abstract: No abstract text available
Text: LED36-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD5
LED36-SMD5
300x300
150-200mA
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Untitled
Abstract: No abstract text available
Text: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD3
LED36-SMD3
300x300
150-200mA
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IC 555
Abstract: 50MT060ULSTA 50MT060ULSA
Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC
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I27191
50MT060ULSA
50MT060ULSTA
E78996
12-Mar-07
IC 555
50MT060ULSTA
50MT060ULSA
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LED34-HIGH-SMD5
Abstract: No abstract text available
Text: LED34-HIGH-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions
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LED34-HIGH-SMD5
LED34-HIGH-SMD5
300ting
300x300
150-200mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC
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I27191
50MT060ULSA
50MT060ULSTA
E78996
08-Mar-07
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LED34-HIGH-SMD5R
Abstract: No abstract text available
Text: LED34-HIGH-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions
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LED34-HIGH-SMD5R
LED34-HIGH-SMD5R
600x300
150-200mA
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PDF
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IC 555
Abstract: IRF E78996 555 IC 50MT060ULSA 50MT060ULSTA
Text: Bulletin I27191 02/05 50MT060ULSA 50MT060ULSTA "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC
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I27191
50MT060ULSA
50MT060ULSTA
E78996
IC 555
IRF E78996
555 IC
50MT060ULSA
50MT060ULSTA
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Untitled
Abstract: No abstract text available
Text: LED34-HIGH-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions
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LED34-HIGH-SMD3
LED34-HIGH-SMD3
300ting
300x300
150-200mA
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5962F0052302VXC
Abstract: IS2-1009EH-Q
Text: Radiation Hardened 2.5V Reference IS-1009RH, IS-1009EH Features The Star*PowerTM Radiation Hardened IS-1009RH, IS-1009EH • Electrically screened to SMD # 5962-00523 are a 2.5V shunt regulator diode is designed to provide a stable 2.5V reference over a wide current range.
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IS-1009RH,
IS-1009EH
MIL-PRF-38535
50krad
50-300rad
01rad
FN4780
5962F0052302VXC
IS2-1009EH-Q
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5962F0052301VYC
Abstract: 5962F0052301VXC 5962F0052301QXC IS-1009RH BS1361 IS2-1009RH-Q IS2-1009RH-8 TO-206AB 52301V F00523V
Text: IS-1009RH Data Sheet FN4780.4 January 27, 2006 Radiation Hardened 2.5V Reference Features The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. • Electrically Screened to SMD # 5962-00523
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IS-1009RH
FN4780
IS-1009RH
MIL-PRF-38535
5962F0052301VYC
5962F0052301VXC
5962F0052301QXC
BS1361
IS2-1009RH-Q
IS2-1009RH-8
TO-206AB
52301V
F00523V
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5962F0052301VXC
Abstract: 5962F0052301QXC 5962F0052301VYC IS-1009RH IS2-1009RH-8 IS2-1009RH-Q ISYE-1009RH-8 ISYE-1009RH-Q FN4780
Text: IS-1009RH Data Sheet September 13, 2005 FN4780.3 Radiation Hardened 2.5V Reference Features The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. • Electrically Screened to SMD # 5962-00523
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IS-1009RH
FN4780
IS-1009RH
5962F0052301VXC
5962F0052301QXC
5962F0052301VYC
IS2-1009RH-8
IS2-1009RH-Q
ISYE-1009RH-8
ISYE-1009RH-Q
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1009rh
Abstract: IS1009RH
Text: Radiation Hardened 2.5V Reference IS-1009RH Features The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. • Electrically Screened to SMD # 5962-00523 The device is designed to maintain stability over the full
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IS-1009RH
IS-1009RH
FN4780
1009rh
IS1009RH
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LED19-SMD5
Abstract: No abstract text available
Text: LED19-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED19-SMD5
LED19-SMD5
300x300
150-200mA
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Untitled
Abstract: No abstract text available
Text: LED22-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.20 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED22-SMD3
LED22-SMD3
300x300
150-200mA
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Untitled
Abstract: No abstract text available
Text: LED20-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.05 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED20-SMD3
LED20-SMD3
300x300
150-200mA
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Untitled
Abstract: No abstract text available
Text: LED21-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED21-SMD3
LED21-SMD3
300x300
150-200mA
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LED19-SMD5R
Abstract: No abstract text available
Text: LED19-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED19-SMD5R
LED19-SMD5R
300x300
150-200mA
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smd diode UM-12
Abstract: No abstract text available
Text: LED19-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED19-SMD3
LED19-SMD3
300x300
150-200mA
smd diode UM-12
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Untitled
Abstract: No abstract text available
Text: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED23-SMD3
LED23-SMD3
300x300
150-200mA
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