Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE SOT-82 PACKAGE Search Results

    DIODE SOT-82 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SOT-82 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    68W SOT

    Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
    Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua


    Original
    PDF B132-H7456-GI-X-7600 68W SOT ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE

    Untitled

    Abstract: No abstract text available
    Text: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available


    Original
    PDF NTS2101P SC-70 SC-70 NTS2101P

    NTJD4001N

    Abstract: NTJD4001NT1 NTJD4001NT1G NTJD4001NT2G
    Text: NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package is Available http://onsemi.com V BR DSS RDS(on) TYP


    Original
    PDF NTJD4001N SC-88 OT-363 NTJD4001N/D NTJD4001N NTJD4001NT1 NTJD4001NT1G NTJD4001NT2G

    Untitled

    Abstract: No abstract text available
    Text: NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package is Available http://onsemi.com V BR DSS RDS(on) TYP


    Original
    PDF NTJD4001N NTJD4001N/D

    Untitled

    Abstract: No abstract text available
    Text: NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package is Available http://onsemi.com V BR DSS RDS(on) TYP


    Original
    PDF NTJD4001N SC-88 OT-363 NTJD4001N/D

    Untitled

    Abstract: No abstract text available
    Text: NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package is Available http://onsemi.com V BR DSS RDS(on) TYP


    Original
    PDF NTJD4001N SC-88 OT-363 NTJD4001N/D

    SML10J225

    Abstract: No abstract text available
    Text: SML10J225 SOT–227 Package Outline. Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) Hex Nut M 4 (4 places) 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 )


    Original
    PDF SML10J225 SML10J225

    NTS2101PT1G

    Abstract: NTS2101P NTS2101PT1 NTS2101PT
    Text: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available


    Original
    PDF NTS2101P SC-70 SC-70 NTS2101P/D NTS2101PT1G NTS2101P NTS2101PT1 NTS2101PT

    NTS2101P

    Abstract: NTS2101PT1 NTS2101PT1G A1 SOT323 MOSFET P-CHANNEL
    Text: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available


    Original
    PDF NTS2101P SC-70 SC-70 NTS2101P/D NTS2101P NTS2101PT1 NTS2101PT1G A1 SOT323 MOSFET P-CHANNEL

    Untitled

    Abstract: No abstract text available
    Text: NTS2101P Power MOSFET −8.0 V, −1.4 A, Single P−Channel, SC−70 Features • • • • Leading Trench Technology for Low RDS on Extending Battery Life −1.8 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2 x 2 mm) Pb−Free Package is Available


    Original
    PDF NTS2101P NTS2101P/D

    marking code 18 6pin

    Abstract: DIODE marking S4 23a inverter 6pin TC1221ECH 3 xf 2 6-pin MARK B 6PIN F MARKING 6PIN xf 2 6-pin sot-23 MARKING CODE Gb K/K1 MARK 6PIN SOT-363
    Text: TC1221 TC1222 High Frequency Switched Capacitor Voltage Converters with Shutdown in SOT Packages FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1221/1222 are CMOS “charge-pump” voltage converters in ultra-small 6-Pin SOT-23A packages. They


    Original
    PDF TC1221 TC1222 OT-23A TC1221/1222 TC1221, 750KHz TC1222. TC1221/1222-1 D-82152 marking code 18 6pin DIODE marking S4 23a inverter 6pin TC1221ECH 3 xf 2 6-pin MARK B 6PIN F MARKING 6PIN xf 2 6-pin sot-23 MARKING CODE Gb K/K1 MARK 6PIN SOT-363

    TE SC88

    Abstract: NTJD4001N NTJD4001NT1 NTJD4001NT1G
    Text: NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package for Green Manufacturing G Suffix http://onsemi.com


    Original
    PDF NTJD4001N SC-88 OT-363 NTJD4001N/D TE SC88 NTJD4001N NTJD4001NT1 NTJD4001NT1G

    3 xf 2 6-pin

    Abstract: xf 2 6-pin
    Text: TC1221 TC1222 High Frequency Switched Capacitor Voltage Converters with Shutdown in SOT Packages FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1221/1222 are CMOS “charge-pump” voltage converters in ultra-small 6-Pin SOT-23A packages. They


    Original
    PDF TC1221 TC1222 OT-23A TC1221/1222 TC1221, 750KHz TC1222. TC1221/1222-2 D-82152 3 xf 2 6-pin xf 2 6-pin

    Untitled

    Abstract: No abstract text available
    Text: NTS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package for Green Manufacturing G Suffix http://onsemi.com


    Original
    PDF NTS4001N SC-70 SC-70 OT-323 NTS4001N

    NTS4001N

    Abstract: NTS4001NT1 NTS4001NT1G
    Text: NTS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package for Green Manufacturing G Suffix http://onsemi.com


    Original
    PDF NTS4001N SC-70 OT-323 NTS4001N/D NTS4001N NTS4001NT1 NTS4001NT1G

    Untitled

    Abstract: No abstract text available
    Text: NTS4001N Small Signal MOSFET 30 V, 270 mA, Dual N−Channel, SC−70 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package for Green Manufacturing G Suffix http://onsemi.com


    Original
    PDF NTS4001N SC-70 OT-323 NTS4001N/D

    IEC801-4

    Abstract: No abstract text available
    Text: TECHNICAL INFORMATION AVX STATICGUARD PERFORMANCE COMPARISON TO SOT-23 SMT DIODES Ron Demcko Application Engineering Manager AVX Corporation Raleigh, NC Abstract: AVX StaticGuard is designed to provide transient protection for MSI to VLSI CMOS circuitry. This article


    Original
    PDF OT-23 5M395-N IEC801-4

    Untitled

    Abstract: No abstract text available
    Text: TPS61040 TPS61041 www.ti.com SLVS413F – OCTOBER 2002 – REVISED DECEMBER 2010 LOW-POWER DC/DC BOOST CONVERTER IN SOT-23 AND SON PACKAGES Check for Samples: TPS61040, TPS61041 FEATURES DESCRIPTION • • • The TPS61040/41 is a high-frequency boost converter dedicated for small to medium LCD bias


    Original
    PDF TPS61040 TPS61041 SLVS413F OT-23 TPS61040, TPS61040/41 400-mA TPS61040) 250-mA

    Untitled

    Abstract: No abstract text available
    Text: TPS61040 TPS61041 www.ti.com SLVS413F – OCTOBER 2002 – REVISED DECEMBER 2010 LOW-POWER DC/DC BOOST CONVERTER IN SOT-23 AND SON PACKAGES Check for Samples: TPS61040, TPS61041 FEATURES DESCRIPTION • • • The TPS61040/41 is a high-frequency boost converter dedicated for small to medium LCD bias


    Original
    PDF TPS61040 TPS61041 SLVS413F OT-23 TPS61040, TPS61040/41 400-mA TPS61040) 250-mA

    Untitled

    Abstract: No abstract text available
    Text: TPS61040 TPS61041 www.ti.com SLVS413F – OCTOBER 2002 – REVISED DECEMBER 2010 LOW-POWER DC/DC BOOST CONVERTER IN SOT-23 AND SON PACKAGES Check for Samples: TPS61040, TPS61041 FEATURES DESCRIPTION • • • The TPS61040/41 is a high-frequency boost converter dedicated for small to medium LCD bias


    Original
    PDF TPS61040 TPS61041 SLVS413F OT-23 TPS61040, TPS61040/41 400-mA TPS61040) 250-mA

    28-V, 250-mA Switch Boost Converter in SOT-23

    Abstract: No abstract text available
    Text: TPS61040 TPS61041 www.ti.com . SLVS413E – OCTOBER 2002 – REVISED MAY 2009 LOW-POWER DC/DC BOOST CONVERTER IN SOT-23 AND SON PACKAGES


    Original
    PDF TPS61040 TPS61041 SLVS413E OT-23 400-mA TPS61040) 250-mA TPS61041) OT23-5 TPS61040/41 28-V, 250-mA Switch Boost Converter in SOT-23

    Untitled

    Abstract: No abstract text available
    Text: NTS4001N Small Signal MOSFET 30 V, 270 mA, Single N−Channel, SC−70 Features • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate Pb−Free Package is Available http://onsemi.com V BR DSS ID Max


    Original
    PDF NTS4001N SC-70 SC-70 OT-323 NTS4001N/D

    IRF 850

    Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
    Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400


    OCR Scan
    PDF

    marking JT

    Abstract: 28 MARKING Q62702-A77
    Text: BAS 28 Silicon Switching Diode Array • • For high-speed switching Electrically isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAS 28 JT Q62702-A163 Q62702-A77 SOT 143 Maximum ratings Parameter


    OCR Scan
    PDF Q62702-A163 Q62702-A77 I-150 marking JT 28 MARKING Q62702-A77