S3 DIODE schottky
Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882
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M3D891
BAT54L
OD882
MDB391
SCA75
613514/01/pp8
S3 DIODE schottky
SOD882
S3 marking DIODE
BAT54L
Marking s3 Schottky barrier
Marking "s3" Schottky barrier
MARKING C SOD882
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NJW4710
Abstract: NJW4710VE1
Text: NJW4710 4ch Laser Diode Driver for Blue Laser Diode •GENERAL DESCRIPTION NJW4710 is a laser diode driver for the operation of a grounded blue laser diode. It is suited to drive a blue laser diode, because it is operated by split power supply. It includes 4 channels current amplifiers
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NJW4710
NJW4710
NJW4710VE1
200MHz
500MHz
SSOP24-E1
375TYP
NJW4710VE1
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Diode BAV99 SOT23
Abstract: No abstract text available
Text: BAW56-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to
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BAW56-V
BAL99,
BAV99,
BAV70.
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
BAW56-V
BAW56-V-GS18
Diode BAV99 SOT23
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
OD-123
GS18/10K
10K/box
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85721
Abstract: 1N4151 1N4151W-V 1N4151W-V-GS08 1N4151W-V-GS18 LL4151
Text: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the
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1N4151W-V
DO-35
1N4151,
LL4151.
2002/95/EC
2002/96/EC
OD-123
1N4151W-V-GS18
1N4151W-V-GS08
85721
1N4151
1N4151W-V
1N4151W-V-GS08
LL4151
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MHC310
Abstract: MHC-310 ua720 SMD MARKING E1 BAT960 EIAJ C-3 marking code b9 MHC311
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability
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M3D744
BAT960
SCA75
613514/02/pp8
MHC310
MHC-310
ua720
SMD MARKING E1
BAT960
EIAJ C-3
marking code b9
MHC311
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SMD MARKING CODE s4
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION
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M3D088
BAP1321-04
MAM107
613512/01/pp8
SMD MARKING CODE s4
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAP64-05W Silicon PIN diode Product specification 2000 Jul 13 NXP Semiconductors Product specification Silicon PIN diode BAP64-05W FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION
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M3D102
BAP64-05W
BAP64-05W
OT323
MAM382
R77/01/pp9
771-BAP64-05W-T/R
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BAP70-03
Abstract: DIODE SMD A9 diode MARKING A9
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators
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M3D319
BAP70-03
MAM406
OD323
OD323)
SCA73
125004/04/pp6
BAP70-03
DIODE SMD A9
diode MARKING A9
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AL01Z
Abstract: diode al01
Text: SANKEN ELECTRIC CO., LTD. AL01Z 1. Scope The present specifications shall apply to Sanken silicon rectifier diode, AL01Z. 2. Outline Type Silicon Rectifier Diode Planar type Structure Resin Molded Applications High Frequency Rectification, etc. 3. Flammability
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AL01Z
AL01Z.
UL94V-0
AL01Z
diode al01
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AU01
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. AU01 1. Scope The present specifications shall apply to Sanken silicon rectifier diode, AU01. 2. Outline Type Silicon Rectifier Diode Mesa Type Structure Resin Molded Applications High Frequency Rectification, etc. 3. Flammability
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UL94V-0
AU01
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APT0502
Abstract: APTDF400U120G fast recovery diode 1a 1200v
Text: APTDF400U120G Single diode Power Module VCES = 1200V IC = 400A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers
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APTDF400U120G
APT0502
APTDF400U120G
fast recovery diode 1a 1200v
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fast recovery diode 54
Abstract: BYC10-600CT BYC5-600 BYV29
Text: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET
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BYC10-600CT
O220AB)
BYC10-600CT
fast recovery diode 54
BYC5-600
BYV29
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smd code marking JfP
Abstract: BAL99
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAL99 High-speed diode Product specification Supersedes data of 1999 May 26 2003 Dec 12 Philips Semiconductors Product specification High-speed diode BAL99 FEATURES PINNING • Small plastic SMD package
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M3D088
BAL99
BAL99
SCA75
R76/04/pp9
smd code marking JfP
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ES01A
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. ES01A １ Scope The present specifications shall apply to Sanken silicon diode, ES01A. ２ Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Pulse Rectification, etc ３ Flammability UL94V-0 (Equivalent)
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ES01A
ES01A.
UL94V-0
ES01A
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DIODE smd marking A4
Abstract: smd diode code A4 BAV70T SC-75
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAV70T High-speed double diode Product specification Supersedes data of 1997 Dec 19 2004 Feb 04 Philips Semiconductors Product specification High-speed double diode BAV70T FEATURES PINNING • Very small plastic SMD package
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M3D173
BAV70T
SCA76
R76/03/pp9
DIODE smd marking A4
smd diode code A4
BAV70T
SC-75
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SOD323 BAS316
Abstract: DIODE SMD A6 BAS316 SC-76 diode SMD MARKING CODE A6 BAS316,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAS316 High-speed diode Product specification Supersedes data of 1998 Mar 26 2004 Feb 04 Philips Semiconductors Product specification High-speed diode BAS316 FEATURES PINNING • Very small plastic SMD package
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M3D049
BAS316
MAM157
BAS316
SCA76
R76/04/pp9
SOD323 BAS316
DIODE SMD A6
SC-76
diode SMD MARKING CODE A6
BAS316,115
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1N4148 krad
Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
Text: LM136A-2.5QML LM136A-2.5QML 2.5V Reference Diode Literature Number: SNOSAM3D LM136A-2.5QML 2.5V Reference Diode General Description Features The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference
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LM136A-2
1N4148 krad
SMD ZENER DIODE 19v
LM136A-2.5QML
LM136-2.5
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APT0502
Abstract: APTDF500U40G
Text: APTDF500U40G Single diode Power Module VCES = 400V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles
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APTDF500U40G
APT0502
APTDF500U40G
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BAP64-05
Abstract: DIODE marking S4 06
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAP64-05 Silicon PIN diode Product specification Supersedes data of 1999 Jul 01 1999 Aug 19 NXP Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled
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M3D088
BAP64-05
R77/04/pp8
BAP64-05
DIODE marking S4 06
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"marking code D2"
Abstract: DIODE marking S4 06 SMD MARKING CODE s4 BAP63-03 SC-76
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP63-03 Silicon PIN diode Product specification Supersedes data of 2001 May 18 2004 Feb 11 NXP Semiconductors Product specification Silicon PIN diode BAP63-03 FEATURES PINNING • High speed switching for RF signals PIN
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BAP63-03
sym006
OD323
OD323)
BAP63-0ontact
R77/04/pp8
"marking code D2"
DIODE marking S4 06
SMD MARKING CODE s4
BAP63-03
SC-76
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BAV74
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV74 High-speed double diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed double diode BAV74 PINNING FEATURES • Small plastic SMD package
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M3D088
BAV74
BAV74
SCA76
R76/04/pp9
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Untitled
Abstract: No abstract text available
Text: GSD2004A-V Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual common-anode e3 diode, especially suited for applications requiring high voltage capability • Lead Pb -free component
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GSD2004A-V
2002/95/EC
2002/96/EC
OT-23
O-236AB)
GSD2004A-V-GS18
GSD2004A-V-GS08
08-Apr-05
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UM9701
Abstract: No abstract text available
Text: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design
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UM9701
UM9701
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