BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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Diode LT 5333
Abstract: D-73277 f9250
Text: AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity protection diode and a suppressor diode. The line is
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AS2701
trans75
Diode LT 5333
D-73277
f9250
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ST26025A
Abstract: ST26025 st 26025a 26025a st260-25 0015923C st diode marking code TO3 ST2602 ST DARLINGTON TRANSISTOR 18031
Text: ST26025A PNP power Darlington transistor Features • ■ High current monolithic Darlington configuration TAB Integrated antiparallel collector-emitter diode Applications 1 2 ■ Automotive fan control ■ Linear and switching industrial equipment TO-3 Description
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ST26025A
ST26025A
6025A
ST26025
st 26025a
26025a
st260-25
0015923C
st diode marking code TO3
ST2602
ST DARLINGTON TRANSISTOR
18031
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26025a
Abstract: No abstract text available
Text: ST26025A PNP power Darlington transistor Features • ■ High current monolithic Darlington configuration TAB s ct Integrated antiparallel collector-emitter diode Applications 1 u d o 2 ■ Automotive fan control ■ Linear and switching industrial equipment
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ST26025A
ST26025A
26025a
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ST2009DHI
Abstract: ST2009
Text: ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY
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ST2009DHI
ISOWATT218
ST2009DHI
ST2009
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ST2009DHI
Abstract: diode india 0441
Text: ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED
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ST2009DHI
ISOWATT218
ST2009DHI
diode india 0441
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ST2009DHI
Abstract: No abstract text available
Text: ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED
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ST2009DHI
ISOWATT218
1500electronics.
ST2009DHI
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Untitled
Abstract: No abstract text available
Text: ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED
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ST2009DHI
ISOWATT218
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ST2009
Abstract: ST2009DHI ISO-WATT218
Text: ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED
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ST2009DHI
ISOWATT218
ST2009
ST2009DHI
ISO-WATT218
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ST2009
Abstract: ST2009DHI ic 565 circuit diagram
Text: ST2009DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED
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ST2009DHI
ISOWATT218
ST2009
ST2009DHI
ic 565 circuit diagram
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ST2310DHI
Abstract: ST2310 transistor ST2310DHI 09-AL
Text: ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED
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ST2310DHI
ISOWATT218
ST2310DHI
ST2310
transistor ST2310DHI
09-AL
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ST2310DHI
Abstract: No abstract text available
Text: ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED
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ST2310DHI
ISOWATT218
ST2310DHI
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ISOWATT218FX
Abstract: ST2317DFX
Text: ST2317DFX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING VERY HIGH VOLTAGE CAPABILITY ( > 1700 V) INTEGRATED FREE WHEELING DIODE
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ST2317DFX
ISOWATT218FX
ISOWATT218FX
ST2317DFX
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st2310dhi
Abstract: transistor ST2310DHI ST2310 st231 *2310dhi
Text: ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED
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ST2310DHI
ISOWATT218
st2310dhi
transistor ST2310DHI
ST2310
st231
*2310dhi
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china tv schematic diagram
Abstract: st231 ISOWATT218FX ST2317DFX china tv schematic diagram free
Text: ST2317DFX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING VERY HIGH VOLTAGE CAPABILITY ( > 1700 V) INTEGRATED FREE WHEELING DIODE
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ST2317DFX
ISOWATT218FX
china tv schematic diagram
st231
ISOWATT218FX
ST2317DFX
china tv schematic diagram free
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ST2310DHI
Abstract: No abstract text available
Text: ST2310DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED
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ST2310DHI
ISOWATT218
ST2310DHI
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TI42
Abstract: NDL5100P Germanium power
Text: 3 GE D b427 S25 002*1351 7 • ■ X~M '% ° N E C ELECTRONICS INC PHOTO DIODE / N D L51O O P 1 300 nm O PTICA L FIB ER COM M UNICATIONS <f> 1 0 0 /<m GERM ANIUM AVALANCHE PHOT DIODE M ODULE D ESC R IPT IO N N DL5100P is a Germanium Avalanche Photo Diode with optica fiber, especially designed for a detector of long wavelength
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b427S25
00ET3S1
NDL51
NDL5100P
a-50/125
are427S5S
NDL5100P
TI42
Germanium power
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ST2N
Abstract: NDL5300P
Text: 3QE D • b427S2S 002=13=10 0 ■ N E C ELECTRONICS INC LIGHT EMITTING DIODE / N D L5300P 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE MODULE DESCRIPTION NDL5300P is an InGaAsP double heterostructure long wavetength LED module. F EA T U R ES
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4S7525
NDL5300P
NDL5300P
Gl-50
30iiW
If-100
bM27S2S
ST2N
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kp50a
Abstract: kp20a ZP200A KP300A KP200A ZP300A kp5a ZP20A zp5a KP100a
Text: Ü t t S M M W M I# Stud Version Semiconductor STANDARD RECOVERY DIODE Stud Version FAST RECOVERY DIODE (Stud Version) M ' °r & É (« IÊ 3 £ ) PHASE CONTROL THYRISTOR (Stud Version) TRIAC THYRISTOR (Stud Version) t i& R T & ä H K K A ) FAST THYRISTOR (Stud Version)
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ZLKP100A
ZLKP150A
ZLKP200A
ZLKP250A
ZLKP300A
kp50a
kp20a
ZP200A
KP300A
KP200A
ZP300A
kp5a
ZP20A
zp5a
KP100a
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Untitled
Abstract: No abstract text available
Text: IN T E G R A T E D C IR C U IT S UC1611 UC3611 U N IT R O D E Quad Schottky Diode Array FEATURES DESCRIPTION Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Forward Voltage Parallelable for Lower Vf or Higher If Fast Recovery Time
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UC1611
UC3611
T3435n
DD13Dlb
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DIAC st2
Abstract: DIAC GE ST2 st2 diac diac Ge st2 DIAC DIAC BR 100 GE ST2 bidirectional trigger diac diac bidirectional diode st2 ge triac
Text: Diac • , ST2 • Trigger 18267269 The DIAC is a diffused silicon bi-directional trigger diode which may be used to trigger the G-E TRIAC or Silicon Controlled Rectifiers. This device has a three-layer structure having negative resistance switching characteristics for b o th directions o f applied voltage.
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-40oC
150oC
DIAC st2
DIAC GE ST2
st2 diac
diac
Ge st2 DIAC
DIAC BR 100
GE ST2
bidirectional trigger diac
diac bidirectional diode st2
ge triac
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30GWJ2C11
Abstract: 12-25B1A 30GWJ2C12 30FWJ2C11 30FWJ2C12 1225B1 12-39A1A TOSHIBA RECTIFIER TF150t
Text: 9097250 TOSHIBA DISCRETE/OPTO 0 '7~-St2rÒ5' 39C 023^5 RECTIFIER STACK (SCNQTTKY BARRIER DIODE STACK) ~3T DE I TOTTSSD 0005345 fl | . 30GWJ2C11 Unit 40V 30A MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak Reverse 30FWJ2C11 Voltage 30GWJ2C11 Average Output Rectified Current (Fig. 1)
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30GWJ2C11
30FWJ2C11
30GWJ2C11
100KHz
25B1A
12-25B1A
30GWJ2C12
30FWJ2C12
1225B1
12-39A1A
TOSHIBA RECTIFIER
TF150t
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ST2122
Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
Text: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device
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H11AG1
H11AG2
H11AG3
H11AG
ST1603
C2079
3VSVocS10V
ol2125
ST2122
GE-MOV
2N4256
gemov
SC160B
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