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    DIODE SY 171 10 Search Results

    DIODE SY 171 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SY 171 10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VK334V

    Abstract: diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171
    Text: 3 Port Direct Operated Poppet Solenoid Valve Rubber Seal Series VK300 Model Universal porting Valve Model Available for N.C. valve, N.O. valve, divider valve, selector valve, etc. Nl/min: 196 Compact/Width 18 X Length 63 mm Low consumption 4W DC (Standard)


    Original     		PDF VK300 VK332 VK332Y VK332E VK332V VK332W VK334 VK334Y VK334E VK334V diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171

    5mo 365 r

    Abstract: SY5000-26-1A-Q 68705 SX3140-5LOZ-Q VVQ1000-51A-C8 dxt170-75-1 SY3000-11-14 SX3120 diode sx34 PH ON 823 m 8833
    Text: 5 Port Solenoid Valve Rubber Seal Series SX All pilot valves are located on the same side of the manifold. Pilot valves single & double solenoid on one side permit not only a reduction in the size of the valve but also a single wiring direction. In addition, this


    Original     		PDF X90-Q 5mo 365 r SY5000-26-1A-Q 68705 SX3140-5LOZ-Q VVQ1000-51A-C8 dxt170-75-1 SY3000-11-14 SX3120 diode sx34 PH ON 823 m 8833

    diode sy 171 10

    Abstract: "DIODE" SY 171 1 g diode sy 171 VK3140 DIODE SERIE SY diode sy 160 VK3120 diode sy 166 VK332 VG32
    Text: Direkt betätigtes 5/2-Wege-Elektromagnetventil Weichdichtender Schieber Serie l/min 147 Kompakt/Breite 18 X Länge 68 mm Geringe Leistungsaufnahme 4W DC (Standard) 2W DC (Energiesparausführung) Kupferfreie Ausführung standardmässig Alle mit dem Medium in Kontakt stehenden


    Original     		PDF VK3000 VK3120 VK3120Y VK3140 VK3140Y VV5K3-42- VV5K3-S42- diode sy 171 10 "DIODE" SY 171 1 g diode sy 171 VK3140 DIODE SERIE SY diode sy 160 VK3120 diode sy 166 VK332 VG32

    SMC - SY5120

    Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
    Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based


    Original     		PDF SY9000 SY3000 SY5000 SY7000 SMC - SY5120 SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode

    diode sy 166

    Abstract: diode sy 164 diode sy 171 "DIODE" SY 171 1 g VK3140Y diode sy 171 10 220v ac solenoid valve hOW TO READ varistor VALUE solenoid valve 12v VK3000
    Text: 5 Port Solenoid Valve/Direct Poppet Rubber seal Series Nl/min 147 Compact/Width 18 X Length 68 mm Low power consumption 4W DC (Standard) 2W DC (Energy saver) Standard copper free specification All the parts in contact with fluid are non-copper materials


    Original     		PDF VK3000 VK3120 VK3120Y VK3140 VK3140Y VV5K3-42- VV5K3-S42- diode sy 166 diode sy 164 diode sy 171 "DIODE" SY 171 1 g VK3140Y diode sy 171 10 220v ac solenoid valve hOW TO READ varistor VALUE solenoid valve 12v VK3000

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    diode sy 171 10

    Abstract: diode sy 170/10
    Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,


    OCR Scan     		PDF BYV40 OT223 BYV40- OT223. diode sy 171 10 diode sy 170/10

    k446

    Abstract: BUK446-1000B
    Text: N AMER P H IL IP S /D IS C R E T E b'ìE D • bbS3131 DD3DSÛS rnm ps semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0D305Ã K446-1000B OT186 BUK446-1000B k446 BUK446-1000B

    diode sy 171

    Abstract: "DIODE" SY 171 1 diode sy 171 10 "DIODE" SY 171 "DIODE" SY 171 1 g
    Text: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62083APA 8CH DARLINGTON SINK DRIVER The TD62083APA is high-voltage, high-current darlington drivers comprised of eight NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads.


    OCR Scan     		PDF TD62083APA TD62083APA 500mA diode sy 171 "DIODE" SY 171 1 diode sy 171 10 "DIODE" SY 171 "DIODE" SY 171 1 g

    diode sy 171 10

    Abstract: diode sy 171 "DIODE" SY 171 1 g diode ITT 172
    Text: - TC74LVX14F/FN/FS HEX SCHMITT INVERTER T he T C 74L V X 14 is a h ig h speed CMOS H E X SCH M ITT IN V ER T E R fab ricated w ith silicon gate C2MOS technology. D esigned for use in 3.3 V olt system s, i t achieves h ig h speed o peration w hile m a in ta in in g th e CMOS low pow er dissipation.


    OCR Scan     		PDF TC74LVX14F/FN/FS diode sy 171 10 diode sy 171 "DIODE" SY 171 1 g diode ITT 172

    "DIODE" SY 171 1 g

    Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
    Text: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise


    OCR Scan     		PDF APT40M42BFN APT35M42BFN MIL-STD-750 "DIODE" SY 171 1 g diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m

    Halbleiterbauelemente DDR

    Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
    Text: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik


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    74hc107

    Abstract: M74HC107B1N
    Text: / = T M54HC107 M74HC107 S G S -T H O M S O N « [10 [ M S I g ^ ( ô i0(gS DUAL J-K FLIP FLOP WITH CLEAR • HIGH SPEED f MAX = 58 M Hz (TYP.) at VC C = 5V ■ LOW POW ER DISSIPATION lCc = 2 nA (MAX.) at TA = 25°C ■ HIGH NOISE IM M U NITY V n ih = V NIL = 2 8 % VCC (MIN.)


    OCR Scan     		PDF M54HC107 M74HC107 54/74LS107 M74HC107 M54/74HC107 74hc107 M74HC107B1N

    fch131

    Abstract: integrated circuits equivalents list rc 261 7400N FJJ14 FCL101 FCH131 equivalent ttl NAND gate with expander 7402N 7420N
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N fch131 integrated circuits equivalents list rc 261 FJJ14 FCH131 equivalent ttl NAND gate with expander

    diode sy 171 10

    Abstract: BUK436-1000B diode sy 171
    Text: bSE T> m PHILIPS INTERNATIONAL 711062b □Db3cH l TDM • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK436-1000B 7110fl5b diode sy 171 10 BUK436-1000B diode sy 171

    integrated circuits equivalents list

    Abstract: FCH161 FCH181 FCH191 FJJ14 7400N FCL101 equivalent 7420N FCL101 FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS Mullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH161 FCH181 FCH191 FJJ14 FCL101 equivalent FJH111

    FCH121

    Abstract: FCL101 7400N 7490N 7402N 7420N FJH101 FJH111 FJH121 FJH131
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N FCH121 7490N FJH101 FJH111 FJH121 FJH131

    integrated circuits equivalents list

    Abstract: FCY101 FCH151 FCH191 7400N 7402N 7420N FCL101 FJH101 FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCY101 FCH151 FCH191 FJH101 FJH111

    Halbleiterbauelemente DDR

    Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
    Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.


    OCR Scan     		PDF DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170

    integrated circuits equivalents list

    Abstract: FCH111 Mullard Diode FCL101 7472N equivalent 7400N FCH131 7402N 7420N FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L V E R S IO N S Mullard equivalent Type No. TTL r a n g e DTL r a n g e - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH111 Mullard Diode 7472N equivalent FCH131 FJH111

    FCH211

    Abstract: FCH101 FCL101 FCH 211 dtl logic gates FCH191 7451 ttl fch 131 tl 741 7402N
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N FCH211 FCH101 FCH 211 dtl logic gates FCH191 7451 ttl fch 131 tl 741

    Untitled

    Abstract: No abstract text available
    Text: I Actuator and Actuator-LED Terminal Blocks for Use with a Base Module 170 for Actuators with Ground Earth / Shield (Screen) Connection 0.08 - 1.5 m m 2 65 V/1.5 kV/3 O 6A AW G 28 - 16 Terminal block width 5 mm / 0.197 in 4_^ 9 - 1 0 mm / 0.37 in O


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    integrated circuits equivalents list

    Abstract: FCH141 FCH191 7400N FCL101 7402N 7420N FJH101 Mullard Diode FJH121
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


    OCR Scan     		PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH141 FCH191 FJH101 Mullard Diode FJH121

    CNY17 pulse circuit

    Abstract: C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 CNY17-2 equivalent transistor C1681 cny171 11
    Text: s o PHOTOTRANSISTOR OPTOCOUPLERS M TK LEtm iltS CNY17-1 CNY17-3 CNY17-2 CNY17-4 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. r& rfh dfe FEATURES High isolation voltage 5300 VAC RMS— 1 minute


    OCR Scan     		PDF CNY17-1 CNY17-3 CNY17-2 CNY17-4 CNY17 STI603A C2D79 CNY17-1: CNY17-2: CNY17-3; CNY17 pulse circuit C1685 transistor transistor c1684 opt 300 cny17-3 NPN C1685 c1685 equivalent transistor C1681 cny171 11