Untitled
Abstract: No abstract text available
Text: BSS169 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 100 V RDS on ,max 12 Ω 0.09 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23
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BSS169
PG-SOT-23
AEC61249-2-21
H6327:
H6906:
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB102MGC MEGA GREEN EBLB102SURCE EBLB102SYC HYPER RED SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLB102MGC
EBLB102SURCE
EBLB102SYC
For12V
For28V
EA0330
SEP/21/2001
EBLB102-2/2
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Untitled
Abstract: No abstract text available
Text: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB101MGC MEGA GREEN EBLB101SURCE HYPER RED EBLB101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .
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EBLB101MGC
EBLB101SURCE
EBLB101SYC
For12V
For28V
EA0329
SEP/21/2001
EBLB101-2/2
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diode sy 200
Abstract: diode sy 180 10 diode sy 400 8 pnp 8 transistor array ttl transistor kp 18P4G 20P2N-A M63840FP M63840KP M63840P
Text: MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 M63840P/FP/KP PRELIMINARY 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode ＊Notice: This is not a f inal specif ication. Some parametric limits are subject to change. DESCRIPT ION PIN CONFIGURATION （TOP VIEW）
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M63840P/FP/KP
500mA
M63840P/FP/KP
diode sy 200
diode sy 180 10
diode sy 400 8
pnp 8 transistor array ttl
transistor kp
18P4G
20P2N-A
M63840FP
M63840KP
M63840P
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP KM-27SECK-10 Features !SUBMINIATURE ! WIDE Description PACKAGE. The Super Bright Orange source color devices are VIEWING ANGLE. made with DH InGaAlP on GaAs substrate Light ! RIGHT ANGLE BEND. ! LONG LIFE SOLID STATE RELIABILITY.
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KM-27SECK-10
KDA0629
SEP/30/2001
KM-27SECK29
KM-27SECK-10
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BLB102MGC-6V-P
Abstract: No abstract text available
Text: 10mm BAYONET BASED LED LAMP BLB102MGC-6V-P MEGA GREEN Features Description ! BUILT-IN The Mega Green source color devices are made CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. ! LONG LIFE. Diode. ! LOW CURRENT, POWER SAVINGS.
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BLB102MGC-6V-P
DSAA8844
FEB/28/2003
BLB102MGC-6V-P
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR U10A2CIA TE CHNICAL DATA ULTRA FAST RECOVERY RECTIFIER DIODE SW ITC H IN G TY PE POW ER SUPPLY APPLICATIO N C O N V E R T E R & CH O PP E R A PPLICATION. SJ MILLIMETERS 10.0±0.3 15.010.3 FEA T U RE S 2.70+0.3 0.76+0.09/-0.05 <t>3.2±0.2 3.010.3
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U10A2CIA
O-220IS
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LM4250
Abstract: OP-32 OP32AZ OP32EP OP32EZ OP32FP OP32FZ OP32GP OP32GZ SY 360 05
Text: ANALOG ► DEVICES High-Speed A ^ > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • O R D E R IN G IN F O R M A T IO N v osMAX (HV) 300 300 500 1000 CERDIP 8-PIN — OP32EP OP32FP OP32GP
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OP-32
500nA
115dB
000V/mV
110dB,
OP-32B/F
OP-32,
LM4250
OP-32
OP32AZ
OP32EP
OP32EZ
OP32FP
OP32FZ
OP32GP
OP32GZ
SY 360 05
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BUK555-200A
Abstract: BUK555-200B T0220AB
Text: N AMER PHILIPS/DISCRETE b'IE P • bbS3T31 QGaDfilS ST6 ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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bbS3131
003D615
BUK555-200A/B
T0220AB
-ID/100
BUK555-200A
BUK555-200B
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p32a
Abstract: S450N
Text: ANALOG DEVICES □ High-Speed /V > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • p re c is io n Programmable Supply Current. 500nA to 2mA Single Supply Operation. +3Vto+30V
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OP-32
OP-32,
gain-of-100
15/xA
500kn
p32a
S450N
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE u a EC15QS03L /3 0 v FEATURES ° M iniature Size, Surface M ount Device o Extremenly Low Forw ard Voltage D rop o Low Pow er Loss, H igh Efficiency o H igh Surge Capability o 20 Volts through 100 Volts Types Available o Packed in 12mm Tape and Reel
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EC15QS03L
EC15QS03L
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK466-100A
SQT404
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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AX3002
Abstract: No abstract text available
Text: A N A LO G ► D E V IC E S High-Speed %CL> 10 Programmable Micropower Operational Amplifier OP-32 precision perform ance when the OP-32 is used with an unregulated battery or vehicular electrical system. FEA TU R ES • • Program m able Supply C u rre n t. 500nA to 2mA
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OP-32
OP-32
OP-32,
gain-of-100
15/nA
500kn
05kft
AX3002
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features
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2SK1792
O-22QFL
100nA
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110flSb
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
TRANSISTOR BO 344
TRANSISTOR BO 341
tny 175
BUK455-100A
BUK455-100B
data transistor 1650
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BUK452-100B
Abstract: BUK452-100A T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl2b
BUK452-100A/B
T0220AB
BUK452-100B
BUK452-100A
T0220AB
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62783AP
Abstract: 62784AP
Text: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62783AP/F/AF TD62784AP/F/AF 8CH HIGH-VOLTAGE SOURCE DRIVER The TD62783AP/F / AF Series are comprised of eight source current Transistor Array. TD62783AP TD62784AP These drivers are specifically designed for fluorescent
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TD62783AP/F/AF
TD62784AP/F/AF
TD62783AP/F
TD62783AP
TD62784AP
8-P-300D
-500m
DIP-18pin
50P18-P-375
OP-18pin
62783AP
62784AP
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PMI op32
Abstract: OP32
Text: OP-32 PMI HIGH-SPEED Avcl a 10) PROGRAMMABLE MICROPOWER OPERATIONAL AMPLIFIER (SINGLE OR DUAL SUPPLY) M o n o iif h it s 1/ii Programmable Supply Current. 500nA to 2mA Single Supply to +30V
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OP-32
500nA
115dB
200fset
OP-32,
15/iA
500kfi
PMI op32
OP32
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Untitled
Abstract: No abstract text available
Text: 15 ÛEC PLE SS EY SEMICONDS D 3 7 böS EE 0D0Ô313 M « P L S B • PLESSEY Semiconductors. ZN447/ZN448/ZN449 " P - S 1 - I0 - Q 2 8-BIT MICROPROCESSOR COMPATIBLE A-D CONVERTERS The ZN447, ZN448 and ZN449 are 8-bit, successive approximation A-D converters designed for easy interfacing
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ZN447/ZN448/ZN449
ZN447,
ZN448
ZN449
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diode sy 104
Abstract: diode sy 180 10 uc 18 yg
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,
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PHP26N10E
T0220AB
diode sy 104
diode sy 180 10
uc 18 yg
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHP65N06LT, PHB65N06LT SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics
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PHP65N06LT,
PHB65N06LT
PHP65N06LT
T0220AB)
PHB65N06LT
OT404
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diode sy 180 10
Abstract: diode sy 106
Text: TC74LVQ32F/FN/FS QUAD 2 -INPUT OR GATE The TC74LVQ32 is a high speed CMOS 2-INPUT OR G A T E fabricated with silicon gate and double - layer metal w iring C2M O S technology. Designed for use in 3.3 V o lt systems, it achieves high speed operation w hile m aintaining the CMOS low power dissipation.
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TC74LVQ32F/FN/FS
TC74LVQ32
OP14--
diode sy 180 10
diode sy 106
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BUK455-400B
Abstract: T0220AB
Text: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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QQ30tiS5
BUK455-400B
T0220AB
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