Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UTD410 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ 1 DESCRI PT I ON SOT-223 The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.
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UTD410
OT-223
UTD410
O-252
UTD410L-TN3-R
UTD410G-TN3-R
UTD410L-TN3-T
UTD410G-TN3-T
UTD410L-AA3-R
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DXT170-71-1
Abstract: SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171
Text: 3 Port Solenoid Valve Rubber Seal Series SYJ300/500/700 SY Low power consumption: 0.5W Without light (Current draw: 21mA at 24V DC) Completely interchangeable with the previous series VJ300/500/700 and VZ300/500. Series VZ SYJ300 VJ300 — SYJ500 VJ500 VZ300
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SYJ300/500/700
VJ300/500/700
VZ300/500.
VJ300
SYJ500
VJ500
VZ300
SYJ700
VJ700
SYJ300
DXT170-71-1
SYJ314R-5G-Q
DXT170
SYJ300-9-1-Q
SYJ512M
SYJ314R
solenoid valve 24v
ss3yj3
diode sy 171
sy 171
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SYJ3120-5G-M3-Q
Abstract: DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A
Text: 4, 5 Port Solenoid Valve Rubber Seal Series SYJ3000/5000/7000 SV Low power consumption: 0.5W Without light SY (Current draw: 21mA at 24V DC) SYJ Bright colour tone and state of the art design SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD Completely interchangeable with
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SYJ3000/5000/7000
VJ3000/5000/7000
VZ3000/5000
VJ3000/5000/7000
VZ3000/5000.
SYJ3000
VJ3000
SYJ5000
VJ5000
VZ3000
SYJ3120-5G-M3-Q
DXT170-71-1
SYJ3000-14-6
VJ7000
VJ3000-13-1
SYJ3000-21-2A-Q
SYJ3000-21-1A-Q
diode sy 166
SYJ5143-5LOU-Q
SY100-30-4A
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SMC - SY5120
Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based
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SY9000
SY3000
SY5000
SY7000
SMC - SY5120
SMC SY313
omron G71-OD16
SY7120
G71-OD16
SY340
431a1
diode sy
GVVZS3000-21A-2
19n marking 2 pin diode
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smc vt301
Abstract: diode P033 breather valve VT317V solenoid direction control valve connection 220v ac 220v ac solenoid valve L146 DXT060-51-13 varister symbol VT307E
Text: 3 Port Direct Operated Poppet Rubber Seal Series VT307 Model Large Flow Capacity, yet Compact Size. Dimensions W X H X D •·····30 X 54.5 X 33 VT307······Nl/min 206.02 or more, 1/4 Low Power Consumption VT/VO307······4.8W DC/Standard Style
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VT307
VT307·
VT/VO307·
VT/VO307Y
VT/VO307W
VT/VO307V,
VT/VO307W)
VT307E
VT307Y
smc vt301
diode P033
breather valve
VT317V
solenoid direction control valve connection 220v ac
220v ac solenoid valve
L146
DXT060-51-13
varister symbol
VT307E
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GVVZS3000-21A-2
Abstract: VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector
Text: 5 Port Solenoid Valve Series SV SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 1.1-1 New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides
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SV1000/2000/3000/4000
30Vrms
UL1310,
UL1585
GVVZS3000-21A-2
VVQ2000-51A-C10
SS5V1-W16SA1WD-06B-C6
EX500-AC000-S
diode catalogue
AS3000
SS5V1-16
GVVZS3000-21A-4
IEC529
turck 8 pin m12 connector
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BAT45C
Abstract: No abstract text available
Text: £ÿj SGS-THOMSON BAT 45 SMALL SIGNAL SCHOTTKY DIODE DES CRIPTIO N Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. A B S O L U T E RATING S limiting values Sy m b o l Param eter V alu e rrm R epetitive Peak R everse Voltage
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IS1832
Abstract: diode 1800v 0.5a TFR1L
Text: 9 0 9 7 2 50 TOSHIBA 3T DE I TDTTSSD 000223e] T TFR1T 39C 0 2239 DISCRETE/OPTO 0 T 1 0 3 “// FAST RECOVERY DIODE _ Unit in wn 1500V 0.5A MAXIMUM RATINGS C H A R A C T E R IS T IC TFR 1L TFR1N Repetitive Peak R everse Voltage TFR1Q TFR1T Average F orw ard C urrent
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000223e
IS1832
diode 1800v 0.5a
TFR1L
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TS01 DIODE
Abstract: 2232 R 012 S FJ CHEMICALS diode sy 200
Text: TLP270D TOSHIBA TENTATIVE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET /PHOTO-TRANSISTOR t• i p ? 7m n nmmr m M O BILE/N O TE PCs U n it in mm PDAs M ULTIM EDIA TVs 15141312 1110 M OD EM S TLP270D has many multi-functions in D A A circuits for modems,
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TLP270D
TLP270D
14pin
TS01 DIODE
2232 R 012 S
FJ CHEMICALS
diode sy 200
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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Untitled
Abstract: No abstract text available
Text: SUPPLY VOLTAGE MONITOR ZIA7033 ISSUE 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The ZIA7033 is a three terminal under voltage monitor circuit for use in m icroprocessor systems. The threshold voltage of the device has been set to 3.1 volts making it ideal for 3.3
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ZIA7033
ZIA7033
OT223,
OT223
ZIA7033N8
ZIA7033G
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tig IGBT module
Abstract: tig ac inverter circuit CD drive schematic
Text: 2-Pack IGBT 1200 V 150 A FUJI IGBT MODULE F series Outline Drawings • Features • Low Saturation Voltage • V o lta g e D rive • Variety of Power Capacity Series ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier • U n in te rru p tib le P o w e r S u p p ly
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E82988
tig IGBT module
tig ac inverter circuit
CD drive schematic
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mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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IC 74ALS164
Abstract: No abstract text available
Text: TOSHIBA TC74VHC164F/FN/FS/FT T O SH IB A C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC164F, TC74VHC164FN, TC74VHC164FS, TC74VHC164FT 8 - BIT SHIFT REGISTER S-IN, P -O U T The TC74VHC164 is an advanced high speed CMOS 8 - BIT SERIAL-IN PARALLEL-OUT SHIFT REGISTER fabricated
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TC74VHC164F/FN/FS/FT
TC74VHC164F,
TC74VHC164FN,
TC74VHC164FS,
TC74VHC164FT
TC74VHC164
TC74V
164F/FN/FS/FT
IC 74ALS164
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BYV74F
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Dual rectifier diodes ultrafast V5 GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop, ultra fast reverse
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PINNING-SOT199
BYV74F
BYV74F-
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SG323K
Abstract: 5 VOLT 3 AMP regulator SG-123 SG323 center tapped transformer SG123A SG323A
Text: Siucon fienepaL SG123AI SG223AI SG323A SG1231SG223 / SG323 11NI f A R I N T H , R A T I O I K< I l l s 5 VOLT— 3-AMP POSITIVE REGULATOR DESCRIPTION FEATURES The SG123A family is an improved version of the popular LM123 5 Volt, 3 Amp Regulator line. These new devices offer maximum initial out
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SG123AI
SG223AI
SG323A
SG1231SG223
SG323
SG123A
LM123
SG123A.
SG323K
5 VOLT 3 AMP regulator
SG-123
SG323
center tapped transformer
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor
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0D271bD
H11AA1-H11AA4
H11AAI
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3. Equivalent C ircuit 2 . Equivalent C ircu it of Module +o .co- -OE Current Control Circuit -Vh >^— o -a •O- 4 . Absolute Maximus Ratings whatsoever for the use of any in any way third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.
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50A/ps
B5367TS
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Untitled
Abstract: No abstract text available
Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL CD54/74FCT373, CD54/74FCT373AT CD54/74FCT533, CD54/74FCT533AT July 1990 DO-D 1 -D 2 -D 3 -D 4 -D 5 -D 6 -D 7 - - 373 533 00 Q1 02 03 04 05
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CD54/74FCT373,
CD54/74FCT373AT
CD54/74FCT533,
CD54/74FCT533AT
CD54/74FCT373AT
CD54/74FCT533AT
FCT373AT)
54/74FCT
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380N8
Abstract: 380N-8
Text: SUPPLY VOLTAGE MONITOR ZSM380 ISSU E 1 - APRIL 1996 DEVICE DESCRIPTION _ FEATURES The Z S M 3 8 0 is a three term inal under v o lt a g e m o n it o r c ir c u it fo r u s e in m ic ro p ro c e sso r sy ste m s. The threshold voltage of the device has been set to 3.8 volts
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ZSM380
OT223
380N8
OT223
ZSM380
380N-8
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Untitled
Abstract: No abstract text available
Text: SUPPLY VOLTAGE MONITOR ZSM530 ISSU E 1 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES T he Z S M 5 3 0 is a three term inal under v o lt a g e m o n it o r c ir c u it fo r u s e in m ic ro p ro c e sso r sy ste m s. The th re sho ld voltage of the device ha s been set to 4,3 volts
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ZSM530
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VEB mikroelektronik
Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden
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A527
Abstract: ESAD83M-006 A526
Text: ESAD83M-006I30A t - F SCHOTTKY BARRIER DIODE Features Insulated package by fu lly m o ld in g • ffeVF Low Vp 7JZ-Y1f * C onnection D iagram S up er high speed s w itc h in g . H igh reliability by pla n e r design. • rV i "A p p lic a tio n s D
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ESAD83M-006
500ns
77-mxn
A527
A526
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