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    DIODE T2D 80 Search Results

    DIODE T2D 80 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE T2D 80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T2D diode

    Abstract: diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D
    Text: Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN


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    PDF RFN16T2D O-220) RFN16 O220FN R1120A T2D diode diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D

    T2D DIODE

    Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
    Text: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①


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    PDF RFN10T2D RFN10 O-220) O220FN R1120A T2D DIODE RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE

    T2D DIODE

    Abstract: T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode RFN16
    Text: RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5


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    PDF RFN16T2D O-220) RFN16 O220FN R1120A T2D DIODE T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode

    T2D DIODE

    Abstract: T2D DIODE 02
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2


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    PDF AEC-Q101 RFN16T2DFH RFN16 O-220) O220FN R1120A T2D DIODE T2D DIODE 02

    t2d diode

    Abstract: T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN20 RFN-20
    Text: Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF 8.0±0.2


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    PDF RFN20T2D O-220) RFN20 O220FN R1120A t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN-20

    T2D 40 DIODE

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)


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    PDF AEC-Q101 RFN20T2DFH O-220) RFN20 O220FN R1120A T2D 40 DIODE

    T2D diode

    Abstract: T2D 80 diode RFN20 RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05
    Text: RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF


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    PDF RFN20T2D O-220) RFN20 O220FN R1120A T2D diode T2D 80 diode RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05

    RFN-10

    Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
    Text: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10


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    PDF RFN10T2D RFN10 O-220) O220FN R1120A RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode

    T2D DIODE

    Abstract: T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2


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    PDF AEC-Q101 RFN10T2DFH RFN10 O-220) O220FN R1120A T2D DIODE T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    T2D 85 diode

    Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
    Text: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V


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    PDF IRLS510A O-220F 71b4m2 D3T23b T2D 85 diode T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54

    T2D 62 diode

    Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
    Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated


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    PDF 2SK2645-01MR O-220F15 T2D 62 diode T2D 98 DIODE T2D 70 diode T2D 27 diode

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


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    PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    34B SOT

    Abstract: NDT455N
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


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    PDF NDT455N NDT455N OT-223 34B SOT

    T2D 96 diode

    Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
    Text: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION


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    PDF M54HC365/366 M74HC365/366 HC365 HC366 HC365 M54/74HHARACTERISTICS T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96

    T2D 52 diode

    Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
    Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL


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    PDF 40V/60HZ T2D 52 diode T2D 00 DIODE T2D 80 diode am/T2D DIODE

    T2D 87 diode

    Abstract: T2D 49 DIODE Rectifier t2d
    Text: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAO HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs


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    PDF IRHM7130 IRHM8130 1x100 1x10s 1X106 IRHM7130D IRHM7130U O-254 IL-S-19600 H-202 T2D 87 diode T2D 49 DIODE Rectifier t2d

    T2D 70 diode

    Abstract: T2D DIODE
    Text: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State


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    PDF LTC1320 RS422/RS562 RS422 RS562 LT1054 551fiMbfl T2D 70 diode T2D DIODE

    T2D 85 diode

    Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
    Text: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies


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    PDF MP7628 MP7628 T2D 85 diode FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode

    diode t2d 77

    Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
    Text: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies


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    PDF MP7628 MP7529B P7628 diode t2d 77 T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80

    MP7680JN

    Abstract: No abstract text available
    Text: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs


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    PDF MP7680 12-bit MP7680 MP7680JN

    BUF601

    Abstract: BUF600
    Text: BUF600/601 Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • OPEN-LOOP BUFFER • VIDEO BUFFER/LINE DRIVER • INPUT/OUTPUT AMPLIFIER FOR MEASUREMENT EQUIPMENT • PORTABLE SYSTEMS • TRANSMISSION SYSTEMS • TELECOMMUNICATIONS


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    PDF BUF600/601 600V/ps, 320MHz, 900MHz, 300MHz BUF600/601 600V/ns 320MHz 17313LS BUF601 BUF600

    T2D 24 DIODE

    Abstract: T2d 43 diode
    Text: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking


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    PDF MP7680 12-Bit 12-bit 3455blfl 3422bl6 QDQ741Q T2D 24 DIODE T2d 43 diode

    HP5082-2835

    Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
    Text: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs


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    PDF 12-bit TTL75 MP7680 34B2bia 3425fcilfl 00G77Ã HP5082-2835 MP7680 MP7680JE MP7680JN MP7680KE MP7680KN