Untitled
Abstract: No abstract text available
Text: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55
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BAS55
bbS3131
7Z690B61
BAW62
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N
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b42752S
NDL5104P,
NDL5104P1
L5104
NDL5104P1
NDL51M
b427S25
NDL5100
NDL5100C
NDL5100P
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ESJA52-12A
Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA52-12A
0D047b7
ESJA520DA
HIGH VOLTAGE DIODE 12kv
22VZ
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON fl M IÎLi gTïïM »(§S T M B Y V 1 0 -6 0 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre
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DD7S17D
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DAF91
Abstract: EAF42 daf 91 diode EGL 1
Text: DAF 91 DAF 91 Diode - A.F. pentode battery valve T he D A F 91 is a d iode-pentode b a tte ry valve. T he p en to d e section is su itab le for A .F. am plification, th e diode being th e n used for detectio n or A.G.C. The voltag e am p lificatio n o b tain ab le from th e p e n
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12 v smps 5 amps
Abstract: CBR2045CT
Text: >!L CBR2045CT Dual Dual Centre Tap Schottky Barrier Rectifier suited for SMPS and High Frequency DC to DC Converters ABSOLUTE MAXIMUM RATINGS Parameters Symbol Average Rectified Forward Current duty cycle = 0.5; T c = 135 °C Per Diode Per Device IF(AV)
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CBR2045CT
23633TM
E3fl33T4
12 v smps 5 amps
CBR2045CT
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Untitled
Abstract: No abstract text available
Text: PD-2.467 International ïor ]Rectifier HFA160NJ40C HEXFRED Ultrafast, Soft Recovèry Diode LUG TERMNAL ANODE 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG V r = 400V TERMNAL ANODE 2 M V F = 1.3V
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HFA160NJ40C
1200nC
Liguria49
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Untitled
Abstract: No abstract text available
Text: AflPLI FON IX INC 45E ] • Dfi0t.2B7 0D0D04? ? ■ AFX T P IN Diode Sw itches Listed by increasing Number of Throws and I.L.) ~ }$ Typ Freq. Range (MHz) Typ Max Isolation Typ Min TW M 5000 SPST 10-1500 1.0 1.5 50 TW D5002 SPDT 30-1000 0.9 1.8 TW D5001 SPOT
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0D0D04?
D5002
D5001
D5004
D5003
D5005
DP-11
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Untitled
Abstract: No abstract text available
Text: l.lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec FAST RECOVERY DIODE 10 D F1 10DF2 FEATURES «Miniature Size ° Super Fast Recovery * Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available ° 52mm Inside Tape Spacing Package Available
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200nsec
10DF2
10DF1
bL15123
0GG2143
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HL6711G
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS 54E D • MMTbSQS □ Gll'Hfl ßfiE ■ H I T ‘4 AIGalnP LD H L 67 11 G Description The HL6711G is a 0.67 pm band AIGalnP gain-guided laser diode with a double heterostructure. It is suit able as a light source for barcode readers, levelers and various other types of optical equipment. Hermetic
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HL6711G
44Tb205
HL6711G
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ixys dsek 30
Abstract: 3006A 30-06A
Text: Common Cathode Fast Recovery Epitaxial Diode FRED DSEK 30 VRRM = 600 V ^FAVM = 2 X 30 A trr = 35 ns P relim inary d ata TO-247 AD ^ rsm ^ rrm Type 640 600 DSEK 30-06A Symbol Test Conditions ^FnHS ^FRU ^VJ —^VJM Tc = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse.width limited by TVJM
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0-06A
000232b
ixys dsek 30
3006A
30-06A
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FLD150F2KP
Abstract: No abstract text available
Text: I lnGaAsP/lnP LASER DIODE MODULE FLD 150F2KP FEATURES • Wavelength 1 .5 5 jura • Fast pulse response t r = 100 psec., t f = 150 psec. • Optical isolation 3 0 dB • Fiber o u tp u t power 2 .5 mW • H erm etically sealed SIP ceramic package • B uilt-in optical isolator, ternary P IN -P D , therm istor and
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150F2KP
0D04cllö
FLD150F2KP
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MTT 25n 12
Abstract: No abstract text available
Text: 2 R I2 5 0 E 2 x 250A r j-— • g ± s i r7 - :£ ì > 3 . — ) \ , If t —Jls : Outline Drawings POWER DIODE MODULE I Features Large Capacitance • WOfflb Insulated Type • 131.0 I 25.0_|_ 3B.0 . [«¡.0 _31.C 68.5 Easy Connection • #7 —v 3 fl-M 8(H exagon B nlt and Washer Assem blies)
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CA3005
Abstract: 30S3 ESAD39 SC-65 T760
Text: E S A D 3 9 C , I M , D ( 1 OA) S ± 'J I * - K ’ Outl i ne Drawings FAST RECOVERY DIODE Features • tr - K S uper high speed sw itch in g . £ —^ % > W !£ t f ifk l ' Low V f in turn on iP7C Connection Diagram High reliability ESA D 39-D D C : Appl i cati ons
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ESAD39
SC-65
ESAD39-DDC
ESAD39-DDN
ESAD39-DGD
I95t/R89
CA3005
30S3
SC-65
T760
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9S24
Abstract: No abstract text available
Text: 6 D I 10 A - 1 2 0 ÜOA : O utline Drawings POWER TRANSISTOR M ODULE : F e a tu re s • 7 'J — ¡ t i 'f l) ^ r — KrtSS • h F E ^ jf t l ' Including Free W heeling Diode High DC Current Gain • # S J Insulated Type • f f i i Ê : A p p lic a tio n s
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E82988
9S24
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Untitled
Abstract: No abstract text available
Text: • 4302271 0QS373Ô T7S ■ HAS 2 N 6 7 67 2N 6768 2 H a r r i s August 1991 N -C h an n el E n h an cem en t-M o d e Power M OS F ie ld -E ffe c t Transistors Package Features T O -2 0 4 A A • 12A and 14A, 3 5 0V - 400V BOTTOM VIEW • fDS(on = 0 .4 fl and 0 .3 fi
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0QS373Ã
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Untitled
Abstract: No abstract text available
Text: Fast Switching SCR T7SH _ _ 4 6 Symbol <pO <PD, 0D 2 H <pj L N Inches Min. 1.850 1.140 1.760 .545 .135 .072 7.75 .025 Max. 1 900 1.180 1.850 605 .145 .082 8.50 4 6 0 A Avg. 7 2 0A R M S 1400-1800 Volts 80-100yusec M illim eters Min. Max. 45 72 48.26 2896 2997
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80-100yusec
00A//7sec)
00A//usec)
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VG700
Abstract: No abstract text available
Text: 450A A vg. 700 RMS Up to 1400 Volts 2 5 -5 0 /is Fast Switching SCR T7SH 45 Inches M illim e te rs Symbol Min. 1.850 1.140 1.760 Max. 1.900 1.180 1.850 M in. 45.72 28.96 44.70 Max. 48.26 29.97 46.99 J, .545 .135 .072 .605 .145 .082 13.84 3.43 1.83 15.37
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SE 2040
Abstract: SCR 400V 1000A
Text: 6 0 0 A Avg. 950 RMS Up to 800 Volts 20-40 fjs Fast Switching SCR T7SH 60 Inches Millimeters Symbol (f>D 4>D tpD2 , H <i>J J, Min. 1.850 1.140 1,760 Max. 1.900 1.180 1.850 Min. 45.72 28.96 44.70 Max. 48.26 29.97 46.99 .545 .135 .072 :605 .145 .082 13.84
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Frequen10K
SE 2040
SCR 400V 1000A
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DRM100
Abstract: No abstract text available
Text: 4 0 0 A Avg. 700 RMS Up to 1200 Volts 1 0 -5 0 /is Fast Switching SCR T7SH .40 In ch e s M illim e te rs S ym bo l 4>D 0D , <p07 H $J J, L N M in . M ax M in . M ax. 1 .8 5 0 1.140 1.7 60 1 .9 0 0 1 .1 8 0 1 .8 5 0 4 5 ,7 2 2 8 .9 6 4 4 .7 0 4 8 .2 6 29.97
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ups 25-60
Abstract: No abstract text available
Text: 5 0 0 A Avg. 786 RMS Up to 1200 Volts 2 5-60 /j s Fast Switching SCR T7S7 50 Inches M illim e te rs Symbol C a iln x i: n n P otfntu l - // L n {Rc?ci> Min. 1 850 1.140 1.760 Max. 1.900 1.180 1.850 Min. 45.72 28.96 44.70 Max. 48 .26 29.97 46.99 J, .545
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00A/umc>
T7S7--50
00A/usec)
00A/u*
00A/usee)
ups 25-60
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32T7S
Abstract: No abstract text available
Text: 600A Avg. 943 R M S Up to 1400 Volts 15-60/is Fast Switching SCR T7S7 60 Inches Millim eters Sym bol <#>D 0D, <#>D, H 4/J J, L Min. 1,850 1.140 1.760 Max. 1.900 1.180 1.850 M in 45.72 28.96 44.70 Max. 48.26 29.97 46.99 .545 .135 .072 .605 145 082 13.84
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15-60/is
20KHz
32T7S
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LA4070
Abstract: 2WAY AS10 AS11 AS12 DIP30S LA2800N
Text: SANYO SEMICONDUCTOR. 15E CORP » I 7 T T 7 -0 7 ti ODOBOSâ T7S-07-I5' LA2800N: M o n o lith ic L in ea r IC 3061 Telephone A n sw e rin g M a ch in e 2572 • ' General Description The LA2800N is a telephone answering machine-use bipolar IC that performs the
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7TT7-07b
T7S-07-I5"
LA2800N
30-pin
LA4070
-10dBV
2WAY
AS10
AS11
AS12
DIP30S
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HA16107FP
Abstract: No abstract text available
Text: HITACHI/ LINEAR DEVICES SIE D • 44^202 00117Ô1 HA16107FP/P, HA16108FP/P- T7S r - ö ’s - i t ' S 600kHz PWM Switching Regulator Controller Description HA16107P, HA16108P The HA 16107 and HA 16108 series are primary control switching regulator control IC’s appropriate for di
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HA16107FP/P,
HA16108FP/P------
600kHz
HA16107P,
HA16108P
DP-16C)
HA16107FP,
HA16108FP
HA16108FP/P
HA16107FP
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