KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. EM1A １ Scope The present specifications shall apply to Sanken silicon diode EM1A. ２ Outline Type Silicon Diode Structure Resin Molded Applications Commercial Frequency Rectification Flammability : UL94V-0 equipment ３ 絶対最大定格
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UL94V-0
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8aa1
Abstract: TPCP8AA1
Text: TPCP8AA1 Silicon N Channel MOS Type U-MOSⅡ / Silicon Epitaxial Schottky Barrier Diode Preliminary TPCP8AA1 単位: mm ○ DC-DC Converter • • Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) MOSFET
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Untitled
Abstract: No abstract text available
Text: TPCP8BA1 Silicon P Channel MOS Type U-MOS-II / Silicon Epitaxial Schottky Barrier Diode TPCP8BA1 TENTATIVE 単位: mm ○ DC-DC Converter • • Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Maximum Ratings (Ta = 25°C) MOSFET
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ZS2000
Abstract: ZS20
Text: ZS2000 上海毅钧商贸有限公司 Http://www.ic108.com 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY V R =40V; IC = 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection.
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ZS2000
ic108
OT23-6
ZS2000TA
ZS2000TC
ZS2000
ZS20
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Untitled
Abstract: No abstract text available
Text: ఎਈऔ! Switching Diode FHD16 Switching Diode ఎਈऔ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application 超高速開關應用 SOT-23
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OT-23
FHD16
OT-23
062in,
024in,
FHD16
75Vdc
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DO-35-A1
Abstract: pin diode do35
Text: ఎਈऔ! Switching Diode FH1N4148 Switching Diode ఎਈऔ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application 超高速開關應用 LL-34
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LL-34
LL-34/DO-35
FH1N4148
DO-35
100KHz
f50Hz
100MHZ,
DO-35-A1
pin diode do35
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Untitled
Abstract: No abstract text available
Text: INFRARED EMI光光ING DIODE先 EL-1KL3 VR 5 IFP 1 P 光he contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. V EL-1KL3 INFRARED EMI光光ING DIODE先
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Zener diode smd marking T1
Abstract: 5W zener diode SMD diode marking 432 power zener diode 40V zener diode zener diode catalog
Text: 大容量面実装デバイス 単体 Power zener Diode •外形図 OUTLINE ST60-48MF ST60-48MF MCP Package Power Surface Mount Device Single Zener Diode ■特性図 CHARACTERISTIC DIAGRAMS Package : MCP Unit:mm Weight 1.5g 40V 6000W TI=25℃ 10/1000 s
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ST60-48MF
10/1000s
T125unless
100A10/1000
40VPulse
30APulse
ST60-48MF
Zener diode smd marking T1
5W zener diode SMD
diode marking 432
power zener diode
40V zener diode
zener diode catalog
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Untitled
Abstract: No abstract text available
Text: INFRARED EMI光光ING DIODE先 EL-1KL5 VR 5 IFP 1 P 光he contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. V EL-1KL5 INFRARED EMI光光ING DIODE先
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Untitled
Abstract: No abstract text available
Text: ఎਈऔ! Switching Diode FHD56 Switching Diode ఎਈऔ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application 超高速開關應用 SOT-23
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OT-23
FHD56
OT-23
062in,
024in,
FHD56
70Vdc
25Vdc
100Adc
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ultra fast recovery time diode 20ns
Abstract: No abstract text available
Text: ఎਈऔ! Switching Diode FHD99 Switching Diode ఎਈऔ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application超高速開關應用 SOT-23
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OT-23
FHD99
OT-23
062in,
024in,
FHD99
70Vdc
ultra fast recovery time diode 20ns
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Shindengen catalog
Abstract: shindengen zener
Text: 大容量面実装デバイス 単体 Power zener Diode •外形図 OUTLINE ST60-48MF ST60-48MF MCP Package Power Surface Mount Device Single Zener Diode ■特性図 CHARACTERISTIC DIAGRAMS Package : MCP Unit:mm Weight 1.5g 40V 6000W TI=25℃ 10/1000 s
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ST60-48MF
10/1000s
T125unless
30ntellectual
Shindengen catalog
shindengen zener
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FHD4148
Abstract: No abstract text available
Text: ఎਈऔ! Switching Diode FHD4148 Switching Diode ఎਈऔ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application超高速開關應用 SOT-23
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OT-23
FHD4148
OT-23
062in,
024in,
FHD4148
75Vdc
25Vdc
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 200Volts 30GFA20 Fast Recovery Diode DSE-13048（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 7 Construction :Diffusion-type Silicon Diode，Axial Lead Type
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200Volts
30GFA20
DSE-13048ï
UL94V-0
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Untitled
Abstract: No abstract text available
Text: Type：EP05DA40 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating
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TypeEP05DA40
EP05DA40
150pF
ESS630S
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Untitled
Abstract: No abstract text available
Text: Type：EC10DA40 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating
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TypeEC10DA40
EC10DA40
150pF
ESS630S
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 400Volts 30GFA40 Fast Recovery Diode DSE-13049（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 7 Construction :Diffusion-type Silicon Diode，Axial Lead Type
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400Volts
30GFA40
DSE-13049ï
UL94V-0
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EP05DA40
Abstract: No abstract text available
Text: Type：EP05DA40 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating
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TypeEP05DA40
EP05DA40
EP05DA40
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 600Volts 31DF6 Fast Recovery Diode DSE-13050（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 6 Construction :Diffusion-type Silicon Diode，Axial Lead Type
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600Volts
31DF6
DSE-13050ï
UL94V-0
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Untitled
Abstract: No abstract text available
Text: Type：EC10DA40 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating
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TypeEC10DA40
EC10DA40
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NSD03A
Abstract: No abstract text available
Text: Type：NSD03A20 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use cathode mark ■最大定格 / Maximum Ratings
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TypeNSD03A20
NSD03A20
NSD03A
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Untitled
Abstract: No abstract text available
Text: Type：EC10DA40 DIODE •OUTLINE DRAWING 構造 ：表面実装拡散型、整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating
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TypeEC10DA40
EC10DA40
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