Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE UF4007 Search Results

    DIODE UF4007 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE UF4007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SR506 Diode

    Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
    Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41


    Original     		PDF SMD4001-4007) SR560 DO-27 UF4004 DO-41 UF4007 10A10 LL4148 FR101-FR107 SR506 Diode diode 6A 1000v SM4007 Diode Diode SR360 diode her307

    2510W

    Abstract: RS1M diode
    Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10


    Original     		PDF DO-214AC ABS10 LL4148 MB10S SM4007 MB10M DB101-DB107; DB151-DB157 DB101S-DB107S; 2510W RS1M diode

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR UF4007 TECHNICAL DATA ULTRA FAST RECOVERY RECTIFIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Ideally suited for use in very high freguency switching power.


    Original     		PDF UF4007 DO-41

    UF4006G-TB

    Abstract: UF4007G 4002G 4005G 4006G UF4001G uf4006g
    Text: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


    Original     		PDF UF4001G UF4007G DO-41, MIL-STD-202, DO-41 UF4006G-TB UF4007G 4002G 4005G 4006G UF4001G uf4006g

    uf4007 diode

    Abstract: diode UF-4007 STD DIODE UF4007 NI 4001 UF4003 diode UF4007 UF400X RS-296-E UF4001-T3 UF4003
    Text: UF4001 – UF4007 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic


    Original     		PDF UF4001 UF4007 DO-41, MIL-STD-202, DO-41 uf4007 diode diode UF-4007 STD DIODE UF4007 NI 4001 UF4003 diode UF4007 UF400X RS-296-E UF4001-T3 UF4003

    uf4006g

    Abstract: No abstract text available
    Text: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic


    Original     		PDF UF4001G UF4007G DO-41, MIL-STD-202, DO-41 uf4006g

    Untitled

    Abstract: No abstract text available
    Text: UF4001G – UF4007G 1.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency


    Original     		PDF UF4001G UF4007G DO-41, MIL-STD-202, DO-41

    UF4001G

    Abstract: UF4007G 4002G 4005G 4006G
    Text: UF4001G – UF4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic


    Original     		PDF UF4001G UF4007G DO-41, MIL-STD-202, DO-41 UF4001G UF4007G 4002G 4005G 4006G

    UF4004 DIODE

    Abstract: UF4007 diode UF4007 UF4001 diode UF4007 DO-41 STD DIODE UF4007 UF4002 UF4003 uf4007 diode data sheet diode uf4007
    Text: UF4001 – UF4007 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


    Original     		PDF UF4001 UF4007 DO-41, MIL-STD-202, DO-41 UF4004 DIODE UF4007 diode UF4007 UF4001 diode UF4007 DO-41 STD DIODE UF4007 UF4002 UF4003 uf4007 diode data sheet diode uf4007

    Untitled

    Abstract: No abstract text available
    Text: UF4001 – UF4007 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


    Original     		PDF UF4001 UF4007 DO-41, MIL-STD-202, DO-41

    Untitled

    Abstract: No abstract text available
    Text: UF4001 – UF4007 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes


    Original     		PDF UF4001 UF4007 DO-41, MIL-STD-202, DO-41

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


    Original     		PDF 38x45Â DI108S SK5100 CP2506 sb5200 SB840

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    ntc 5D-13

    Abstract: dm0565r EFD2525 AE GP 531 e dm0565r EFD-2525 MOSFET BA8 pwm smps dm0565 diode sg 73A
    Text: FPS FPS AC-DC AC-DC Hang-Seok Choi FPS +82-32-680-1383 +82-32-680-1317 hschoi@fairchildsemi.co.kr [ ] FPS Fairchild Power Switch AC-DC SMPS SMPS FPS FPS design assistant LP2 DR2 Bridge rectifier diode VDC + CDC Rsn Csn - Vsn + Np NS2 CO2 VO2 CP2 Dsn DR1 FPS


    Original     		PDF 3c323 3c37p 5nF/275Vac 100uF/400V GBLA06 A/600V) EFD3030 67kHz FSDM0565R 265VAC ntc 5D-13 dm0565r EFD2525 AE GP 531 e dm0565r EFD-2525 MOSFET BA8 pwm smps dm0565 diode sg 73A

    transistor 2N5952

    Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
    Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also


    Original     		PDF

    BA157* diode

    Abstract: Zener Diode Glass 50v
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package DO-41 Package Weight mg 350 Product Group Type No. 1N5817 – 1N5819 SB120 – SB1200 SR120 – SR1100 SB220S – SB2200S SF11 – SF17 HER101 – HER108 UF4001 – UF4007


    Original     		PDF DO-41 1N5817 1N5819 SB120 SB1200 SR120 SR1100 SB220S SB2200S HER101 BA157* diode Zener Diode Glass 50v

    SMD DIODE UF4007

    Abstract: ultra fast recovery time diode 10ns
    Text: Ultra Fast Recovery Rectifiers UF4001-G Thru. UF4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device Features DO-41 -Low cost construction. -Fast switching for high efficiency. -Low reverse leakage. -High forward surge current capability. 1.0 25.40 Min.


    Original     		PDF UF4001-G UF4007-G DO-41 MIL-STD202E, QW-BU006 SMD DIODE UF4007 ultra fast recovery time diode 10ns

    Untitled

    Abstract: No abstract text available
    Text: Ultra Fast Recovery Rectifiers UF4001-G Thru. UF4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device Features DO-41 -Low cost construction. -Fast switching for high efficiency. -Low reverse leakage. -High forward surge current capability. 1.0 25.40 Min.


    Original     		PDF UF4001-G UF4007-G DO-41 MIL-STD202E, QW-BU006