Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :
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DD1200S33K2C
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DD200S33K2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *
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DD200S33K2C
DD200S33K2C
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :
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DD1200S33K2C
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DD200S33K2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *
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DD200S33K2C
DD200S33K2C
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DD200S33K2C
Abstract: ZS4500
Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *
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DD200S33K2C
DD200S33K2C
ZS4500
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :
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DD1200S33K2C
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DD200S33K2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *
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DD200S33K2C
DD200S33K2C
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DD1200S33K2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :
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DD1200S33K2C
DD1200S33K2C
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Untitled
Abstract: No abstract text available
Text: UG4M83224RRG T -6 32M Bytes (8M x 32) DRAM 72Pin SIMM based on 4M X 16 W/DIODE General Description Features The UG4M83224RRG(T)-6 is a 8,388,608 bits by 32 SIMM module.The UG4M83224RRG(T)-6 is assembled using 4 pcs of 4Mx16 4K refresh DRAMs in 50 pin TSOP package and with diode
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UG4M83224RRG
72Pin
4Mx16
1000mil)
ENG-2-001-17-03
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Untitled
Abstract: No abstract text available
Text: UG2M43224RRG T -6 16M Bytes (4M x 32) DRAM 72Pin SIMM based on 4M X 16 W/DIODE General Description Features The UG2M43224RRG(T)-6 is a 4,194,304 bits by 32 SIMM module.The UG2M43224RRG(T)-6 is assembled using 2 pcs of 4Mx16 4K refresh DRAMs in 50 pin TSOP package and with diode
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UG2M43224RRG
72Pin
4Mx16
1000mil)
ENG-2-001-17-03
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DF600R12IP4D
Abstract: diode 9-f 1N6760
Text: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode
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DF600R12IP4D
DF600R12IP4D
diode 9-f
1N6760
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FF300R12ME3
Abstract: No abstract text available
Text: Technische Information / technical information FF300R12ME3 IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FF300R12ME3
FF300R12ME3
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FF900R12IP4
Abstract: AM2101 E10010
Text: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IP4
FF900R12IP4
AM2101
E10010
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FF200R06ME3
Abstract: No abstract text available
Text: Technische Information / technical information FF200R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EconoDUAL™2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
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FF200R06ME3
FF200R06ME3
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KY701
Abstract: FP50R06W2E3
Text: Technische Information / technical information FP50R06W2E3 IGBT-Module IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
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FP50R06W2E3
KY701
FP50R06W2E3
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6AY3-B
Abstract: 6ay3 tube 75MIN general electric
Text: PRODUCT INFORMATION Page 1 Diode TUBES FOR TV DAMPING DIODE APPLICATIONS The 6AY3-B is a single heater-cathode type diode designed for use as the damping diode in the horizontal-deflection circuit of television receivers. GENERAL ELECTRICAL M ECH A N ICA L
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E9-89,
6AY3-B
6ay3 tube
75MIN
general electric
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38HK7
Abstract: 38hk7 tube td301 bp 3125 i437 general electric
Text: PRODUCT INFORMATION Page 1 Compactron Diode-Pentode TUBES The 38HK7 is a compactron containing a high-perveance diode and a beam-power p e n t o d e . The diode is intended for service as the damping diode and the pentode as the horizontal-deflection amplifier in television receivers.
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38HK7
38HK7
K-55611-TD301-4
K-55611-TD301-5
38hk7 tube
td301
bp 3125
i437
general electric
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IC 556 pin DIAGRAM
Abstract: E12-70 general electric
Text: E L E C T R O N IC TN A C TIO N — PRODUCT INFORMATION — Page 1 6BZ3 Compactron Diode TUBES FOR TV DAMPING DIODE APPLICATIONS The 6BZ3 is a compactron containing a single heater-cathode type diode intended for service as the damping diode in the horizontal-deflection circuit of television receivers.
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525-line,
30-frame
IC 556 pin DIAGRAM
E12-70
general electric
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UAF41
Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
Text: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver wendung als H.F.-, Z.F.- und H.F. Verstärker
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UAF41
UAF41
CDA 5,5 Mc
CDA 5.5 MC
alim
H242
551-va
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l7001
Abstract: No abstract text available
Text: LASER DIODE NDL7001 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode especially designed fo r optical data com m unications. The M ultiple Quantum Well MQW structure can achieve stable operation at high tem perature {+85 "Ci.
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NDL7001
NDL7001
l7001
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6CG3
Abstract: 6CG3 tube E12-70 general electric
Text: — PRODUCT INFORMATION — Page 1 6CG3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS • LOW TUBE DROP • 5000 VOLTS DC • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC The 6CG3 is a compactron containing a single heater-cathode type diode. It is intended
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12G2
Abstract: 12T2
Text: I2f2 A b OHHOH flH O A -TpH O fl Double diode-triode The 12T2 double diode-triode is designed for low-frequency detection and pre-amplification. The 12T2 double diode-triodes are enclosed in JlBO H H bie ÄHOA-TpHOÄbi 1 2 F 2 BbinycKafOTCH b metal case and are provided with an octal base
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B03-aehctbhk)
300UaTy
12G2
12T2
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L5070
Abstract: LS061 L7s00 dl7550
Text: DATA SHEET NEC LASER DIODE MODULE N D L7550P ELECTRON DEVICE 1 5 5 0 nm InGaAsP MQW-DC-PBH-PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESC R IPTIO N N DL7550P is a 1 550 nm pulsed laser diode, that has a newly developed Multi-Quantum Well MQW structure, D IP module
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L7550P
DL7550P
LS061
L5765P1
L5070
L5071
L5775P1
L7s00
dl7550
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marking PA
Abstract: CPH3106 CPH6701 "marking PA"
Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.
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ENN6007A
CPH6701
CPH6701
CPH3106
SBS001,
CPH6701]
marking PA
"marking PA"
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