sensefet
Abstract: FET 4953 NILMS4501N Current Mirror FET 4953 FET a 1712 mosfet current mirror
Text: AND8210/D Current Sensing Power MOSFET Use in DC−DC Converters Prepared by: Hal Massie ON Semiconductor http://onsemi.com APPLICATION NOTE Vboot +V Vpwr +V D1 Diode Bootstrap Q1 VCC +V U1 Controller/ FET Driver C2 L1 Vo Drain Phase Q2 UG BG Vid’s C1 +
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AND8210/D
sensefet
FET 4953
NILMS4501N
Current Mirror FET
4953 FET
a 1712 mosfet
current mirror
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Led driver 100W schematic
Abstract: KNB1560 cp5 94v-0 power supply driver led 100w schematic 100w amp schematic diagram schematic diagram 100w amp IRF22N60K CP5 94V0 TEA1507 ir1166
Text: User Guide 1.0 IRAC11662-100W +16V Low-side Smart Rectification 100W Flyback Demo Board User’s Guide by HELEN DING, ISRAEL SERRANO 19 April 2010 Rev.1A 19 April 2010 UG #1.0 Page 1 of 24 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105
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IRAC11662-100W
M3X38;
SFH615A2
TEA1507
SFH615A-2
Led driver 100W schematic
KNB1560
cp5 94v-0
power supply driver led 100w schematic
100w amp schematic diagram
schematic diagram 100w amp
IRF22N60K
CP5 94V0
TEA1507
ir1166
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KNB1560
Abstract: IRF22N60K cp5 94v-0 4N7 CAPACITOR 1000V CP5 94V0 IRF22N60 hughes 200-203
Text: User Guide 1.0 IRAC11662-100W 123456789ABCD5EF5DBBB75 525 5 DF75 7C55 AD!A5"#BCD5 by HELEN DING, ISRAEL SERRANO 19 April 2010 Rev.1A 19 April 2010 UG #1.0 Page 1 of 24 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105
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IRAC11662-100W
123456789ABCD5EF
M3X38;
SFH615A2
TEA1507
SFH615A-2
KNB1560
IRF22N60K
cp5 94v-0
4N7 CAPACITOR 1000V
CP5 94V0
IRF22N60
hughes 200-203
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Aromat relay lr42758
Abstract: lr26550 LR42758 Aromat lr26550 LR68004 Aromat lr44444 Aromat lr26550 datasheet lr44444 Aromat lR44444 relays E43149
Text: Panasonic Electric Works Corp. of America 629 Central Avenue, New Providence, NJ 07974-1526 Tel: 908 464-3550 Standards Chart Standards Chart Mechanical Relays Item SX (ASX) UL/C-UL (Recognized) CSA (Certified) File No. Contact rating File No. Contact rating
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LR26550
E43149
E43149
Aromat relay lr42758
lr26550
LR42758
Aromat lr26550
LR68004
Aromat lr44444
Aromat lr26550 datasheet
lr44444
Aromat lR44444 relays
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FP35R12W2T4 IGBT-Module IGBT-modules EasyPIM Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FP35R12W2T4
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lg led tv circuit diagram
Abstract: lg led tv internal block diagram diagram LG led TV circuits lg led tv electronic diagram block diagram LG TV 21 circuits diagram LG TV circuits lg tv led driver circuit diagram diagram power supply LG 32 in led TV circuits DIODE UG 77 CXA2108AQ
Text: CXA2108AQ Constant-Current Driver for Full Color LED Display Description The CXA2108AQ is a 1,024-gradation LED driver which is ideal for full color LED displays. This IC has 24 outputs and a maximum output current of 70mA. Time division allows driving of either two or six LEDs
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CXA2108AQ
CXA2108AQ
024-gradation
10-bit
024-gradation)
IOUT23
80PIN
QFP-80P-L01
lg led tv circuit diagram
lg led tv internal block diagram
diagram LG led TV circuits
lg led tv electronic diagram
block diagram LG TV 21 circuits
diagram LG TV circuits
lg tv led driver circuit diagram
diagram power supply LG 32 in led TV circuits
DIODE UG 77
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Ceramic RF Power and HV Capacitors
Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0048-0210
Ceramic RF Power and HV Capacitors
dwa 108 a
kvp 42 DIODE
KT 0803 K
kvar schematic
kvp 03 diode
kvp 34 DIODE
KVP 79 A
dwa 108
Optoelectronics Device data
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DD104N12K-A circuit
Abstract: DD171N12K Thyristor Tabelle DD104N12K-A eupec DD171N12k ND89N12K T1059N Eupec Power Semiconductors Phase Control Thyristor tellerfeder ND260N12K 3KM17
Text: . power the Home Products Stacks News Contact Disc Assemblies Editorials Disc Type Stack circuit Job Offers Company Module Stacks Search Site Content Heatsinks M1C <180 V <500 V line Voltage eff 690 V M2C <180 V <500 V 690 V 1000 V M3C <180 V <500 V 690 V
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10T588N
T589N
T618N
T659N
T688N
T699N
T718N
T719N
T878N
T879N
DD104N12K-A circuit
DD171N12K
Thyristor Tabelle
DD104N12K-A
eupec DD171N12k
ND89N12K
T1059N Eupec Power Semiconductors Phase Control Thyristor
tellerfeder
ND260N12K
3KM17
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ISPSD coolmos
Abstract: bup400d mosfet nepi
Text: Properties of the New Compensation Devices CoolMOS between 420K and 80K— the Ideal Device for Cryogenic Applications* A.E. Schlögl a), G. Deboy b), H.W. Lorenzen c), U. Linnert a), H.-J. Schulze a) and J.P. Stengl b) a) SIEMENS AG, Corporate Technology, Research Center Power Electronics, Otto-Hahn-Ring 6, 81730 Munich, Germany
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80K--
C3-219-24,
ISPSD coolmos
bup400d
mosfet nepi
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diode b1c
Abstract: No abstract text available
Text: SK 80 MBBB 055 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET G<BB GQBB T< T<D ?- K PM N$I 407,- %*8,23.-, -', .6.,+ ?- K PM ;LS> N$U V> *' Y V &-U ?- K PM ;LS> N$U ?¥ Inverse diode SEMITOP 3 MOSFET Module T_ K @ T< T_D K @ T<D ?- K PM ;LS> N$U
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Untitled
Abstract: No abstract text available
Text: 6: 36 PM OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released ug sd ay ,1 2A OCTLIU LT us t, 20 04 04 :1 PM4323 Data Sheet Proprietary and Confidential Released Issue No. 3: June 2003 Do wn lo ad ed by C on te n tT ea m of Pa rtm in er In co
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PM4323
PMC-2021612,
MO-192,
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NC7SV08
Abstract: NL17SV08 NL17SV08XV5T2 SN74AUC1G08 DIODE MARKING code UG 45
Text: NL17SV08XV5T2 Single 2−Input AND Gate The NL17SV08 is an ultra−high performance 2−Input AND gate manufactured in 0.35m CMOS technology with excellent performance down to 0.9 volts. This device is ideal for extremely high−speed and high−drive applications. Additionally, limitations of board space are
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NL17SV08XV5T2
NL17SV08
OT-553
NL17SV08XV5T2/D
NC7SV08
NL17SV08XV5T2
SN74AUC1G08
DIODE MARKING code UG 45
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EEM12.7
Abstract: No abstract text available
Text: IVidcom PROVISIONS for Power: Kit components Midcom's PROVISIONS™ kit enables design engineers to experiment with coils and cores in three package styles, providing designers with ample materials to test a variety of mechanical and electrical combinations. The variety of materials
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EFD15
EEM12.7
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HC1G02
Abstract: DIODE MARKING code UG 45
Text: INTEGRATED CIRCUITS 74HC1G02; 74HCT1G02 2-input NOR gate Product specification File under Integrated Circuits, IC06 Philips Semiconductors 1998 Aug 31 PHILIPS Philips Semiconductors Product specification 74HC1G02; 74HCT1G02 2-input NOR gate FEATURES QUICK REFERENCE DATA
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74HC1G02;
74HCT1G02
74HCT1G02
SCA60
245106/00/01/pp12
HC1G02
DIODE MARKING code UG 45
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TRM7732AN
Abstract: No abstract text available
Text: TRM7732AN OC-12 Transmitter Description The T R M 7732A N is a lightw ave transm itter for O C -12. Features • C om plied w ith SO N E T /SD H standard • DFB laser diode • O peration from I M b/s to 622.08M b/s at 1.55 pm w avelength • 50Ì2, A C -coupled interface
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TRM7732AN
TRM7732AN
OC-12.
OC-12
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6j1 tube
Abstract: 6N16B 6N1P TUBE 6j1 TRIODE 6C4C 6H13C 6c8c tube 6H7C 6n1p-ew 6N24P
Text: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH
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Ccc70
n03B0jineT
03HaK0MHTbC5i
r-200,
6H17B
30Z6S
30l46c
JIO-3720/738
6j1 tube
6N16B
6N1P
TUBE 6j1
TRIODE 6C4C
6H13C
6c8c tube
6H7C
6n1p-ew
6N24P
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6h2n
Abstract: 6N3P 6N16B 6X6C 6N6P-i 6e5p tube 6N17B 6N5P 6n2p 6N1P
Text: nPHEMHO-yCMilMTEnbHblE nAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALLinPMEOPMHTOPr“ CCCP MOCKBA V/O “MASHPRIBORINTORG” USSR MOSCOW Ccc70 yd 13082.01 CnpaBo^HHK-KaTajior „npHeMHO-ycHjiHTejibHbie jiaMnbi“ n03B0jineT 03HaK0MHTbC5i c HOMeHKJiaTypOH H TeXHHqeCKHMH X â p a K T e pHCTHKâMH npHeMHOycHjiHTejibHbix jiaMn, KOTOpbie S K c n o p r a p y e T CoBeTCKHH Cok 3. CnpaBO^HHK-KaTajior npeziHasHa^eH
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Ccc70
n03B0jineT
03HaK0MHTbC5i
r-200,
Bon2000
30Z6S
30U6C
JIO-3720/738
6h2n
6N3P
6N16B
6X6C
6N6P-i
6e5p tube
6N17B
6N5P
6n2p
6N1P
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Untitled
Abstract: No abstract text available
Text: HD74LVC573-Octal D-type Transparent Latches with 3-state Outputs Description The HD74LVC573 has eight D type latches with three state outputs in a 20 pin package. When the latch enable input is high, the Q outputs will follow the D inputs. When the latch enable goes low, data at the D
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HD74LVC573--------------Octal
HD74LVC573
HD74LVC573
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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information applikation
Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Text: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK
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RV12P2000
Abstract: rgn 1064 Valvo RV2P800 RL12P10 rens1374d rens 1374d ECL11 vcl11 UBL21
Text: # I N H A L T S o Ü T ab elle Seite N r. 1 R ö hren-S chliisscl. 3 „ 2 A - R ö h r e n . 5 „ 3 B - R ö h r e n . 7 „ 4 C - R ö h r e n . 8
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TRIODE 6H13C
Abstract: Triode 6h7c 6H13C TUBE 6j1 V148T TRIODE 6C4C "Receiving Tubes" book 6H7C 6H16B 6H9c triode
Text: nPHEMHO-yCHJIHTEJIbHblE ilAMflbl RECEIVING TUBES v\n/y B /O „ M A U in P M B O P H H T O P r“ CCCP M OCKBA nPHEMHO-yCMJlMTEnbHblE riAM nbi RECEIVING TUBES K huto 2 Book 2 B/O „MALUnPMBOPMHTOPr“ CCCP MOCKBA V/O “ MASHPRIBORINTORG” USSR M O SCO W
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n03B0JIHeT
03HaK0MHTbCH
r-200,
30UL6C
JIO-3720/738
TRIODE 6H13C
Triode 6h7c
6H13C
TUBE 6j1
V148T
TRIODE 6C4C
"Receiving Tubes" book
6H7C
6H16B
6H9c triode
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a210k
Abstract: Mikroelektronik Heft "Mikroelektronik" Heft information applikation mikroelektronik mikroelektronik Heft 12 A211D A209K VEB mikroelektronik mikroelektronik DDR IC A211D
Text: INFORMATION APPLIKATIO N MIKROELEKTRONIK In fo r m a tio n - Applikation Die monolithisch integrierten N F-V erstärker A 210D A210K A211D Eigenschaften und ! Anwendung Mikroelektronik Heft 1 veb haîbîeîterwerk frankfurt/oder l e i t b e t r i e b im v e b k o m b i n a t m ik r o e le k t r o n ik
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A210K
A211D
Mikroelektronik Heft
"Mikroelektronik" Heft
information applikation mikroelektronik
mikroelektronik Heft 12
A211D
A209K
VEB mikroelektronik
mikroelektronik DDR
IC A211D
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E412D
Abstract: information applikation information applikation mikroelektronik applikation heft Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft mikroelektronik Heft 12 aktive elektronische bauelemente ddr mikroelektronik DDR
Text: innjolkiij ii l _!Il j I h Information Applikation L . i m in i l- c Die vorliegende technische Information dient dea Informati. bedürfnis des Schaltungsentwicklers sowie interessierten Technikers im In- und Ausland eu speziellen aasgewählten Erzeugnissen der Halbleiterbauelemente-Industrie der
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