BAV99V
Abstract: No abstract text available
Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V.
OT-23
BAV70-V
BAV70-V-GS18
BAV70-V-GS08
D-74025
11-Mar-05
BAV99V
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Untitled
Abstract: No abstract text available
Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V.
2002/95/EC
2002-96/EC
OT-23
BAV70-V
BAV70-V-GS18ake
D-74025
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Untitled
Abstract: No abstract text available
Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V.
2002/95/EC
2002-96/EC
OT-23
BAV70-V
BAV70-V-GS18s
08-Apr-05
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DSA300I200NA
Abstract: SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934
Text: DSA 300 I 100 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 300 A 0.79 V Part number DSA 300 I 100 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:
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OT-227B
60747and
20091002a
DSA300I200NA
SOT227B
IXYS DSA 300
SOT227B package
DSA300I100NA
DSA300I45NA
DSa300i
DSA300
Minibloc m4x8
din 934
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters
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10H6004
5SYA1109-03
CH-5600
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KA 490
Abstract: 85103 DIODE
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5x103 1.4 0.52 1100 V A A V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Jan. 03 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO
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05D2501
5SYA1112-03
CH-5600
KA 490
85103 DIODE
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters
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05D2501
CH-5600
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ABB Semiconductors
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters
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05D2501
5SYA1112-03
CH-5600
ABB Semiconductors
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Si6821DQ
Abstract: S-56954 56954 SI6821
Text: Si6821DQ New Product Vishay Siliconix P-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS V rDS(on) (W) –20 ID (A) 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage
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Si6821DQ
S-56954--Rev.
01-Mar-99
S-56954
56954
SI6821
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70790
Abstract: Si6820DQ
Text: Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS V rDS(on) (W) 20 ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (v) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A
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Si6820DQ
S-56936--Rev.
23-Nov-98
70790
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70790
Abstract: Si6820DQ
Text: Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS V rDS(on) (W) 20 ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (v) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A
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Si6820DQ
18-Jul-08
70790
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3522v
Abstract: 70790
Text: Si6820DQ Vishay Siliconix N-Channel, Reduced Qg, MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS V rDS(on) (W) 20 ID (A) 0.160 @ VGS = 4.5 V "1.9 0.260 @ VGS = 3.0 V "1.5 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (v) Diode Forward Voltage IF (A) 20 0.5 V @ 1 A
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Si6820DQ
08-Apr-05
3522v
70790
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BY 178 DIODE
Abstract: IXYS DATE CODE
Text: DSEP40-03AS advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 40 A 35 ns Part number DSEP40-03AS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP40-03AS
O-263
60747and
BY 178 DIODE
IXYS DATE CODE
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50117
Abstract: DSEP40-03AS G60N
Text: DSEP40-03AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 40 A 35 ns Part number DSEP40-03AS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP40-03AS
60747and
20090326a
50117
DSEP40-03AS
G60N
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snubber IGCT
Abstract: ABB Semiconductors 5SYA1106-02
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters
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03D4501
5SYA1106-02
CH-5600
snubber IGCT
ABB Semiconductors
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 30-03A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM 30 A FAV V RRM 300 V t rr 30 ns TO-247 AD Type V 300 300 DSEP 30-03A A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings per diode Ifrm s
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0-03A
O-247
1500C
D2-31
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 15-03 A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V V RRM V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 15-03 A Test Conditions Maximum Ratings per diode I fr m Tc = 135°C ; rectangular, d = 0.5
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O-220
1500C
D2-31
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEP 29-03A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol DSEP 29-03A Test Conditions Maximum Ratings per diode U rms U rm Tc = 130°C ; rectangular, d = 0.5
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9-03A
O-220
1500C
D2-31
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Untitled
Abstract: No abstract text available
Text: nixYS DSEP 2x 31-03A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM - 1 T yp e V V rrm V 300 300 DSEP 2 x 3 1 -03A Symbol Test Conditions Urms Uavm Urm Tc = 100°C ; rectangular, d = 0.5; per diode tP < 10 us; rep. rating, pulse width limited by TVJM
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1-03A
D2-31
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en2617b
Abstract: No abstract text available
Text: Ordering number:EN2617B _ SVC342 Diffused Junction Type Silicon Diode V aractor Diode for AM Receiver Electronic T uning Use Features •Twin type varactor diode for low-voltage A M electronic tuning use. •High capacitance ratio. •Excellent linearity of C-V characteristic.
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EN2617B
SVC342
en2617b
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH17N100U1 IXGH17N100AU1 v CES ^C25 V * CE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions v CES v CGR v GES v’ Td =25°C to ^ = 25°C to 150°C; Maximum Ratings 150°C
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IXGH17N100U1
IXGH17N100AU1
O-247
4bflb22b
1996IXYS
17N100U1
17N100AU1
0003L4A
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Untitled
Abstract: No abstract text available
Text: DIXYS DSEP 2x 61-03A Advanced Technical Data HiPerFRED Epitaxial Diode with Soft Recovery V RSM V - 1 V 1 T y p e rrm 1 • 300 300 Symbol 1 I frm Tc = 7 5 °C ; rectangular, d = 0.5; per diode tP < 10 us; rep. rating, pulse width limited by TVJM
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1-03A
D2-31
D2-24
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LIC AGENTS DATA
Abstract: No abstract text available
Text: @ M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 DS4176 - 1 .4 APPLICATIONS • KEY PARAMETERS v RRM 3500V 3000A Jf A V 20000A FSM 1500(lC Qr 6.0|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998
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DS4176
DSF21035SV
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
LIC AGENTS DATA
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TIC 2460
Abstract: LIC AGENTS DATA
Text: @ M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • KEY PARAMETERS v RRM 6000V 1690A Jf A V 16000A FSM 1200(lC Qr 6.5|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998
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DS4231
DSF21060SV
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
TIC 2460
LIC AGENTS DATA
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