MA4E2054E-1068T
Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
Text: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS
|
Original
|
PDF
|
MA4E2054
100nA
500nA
OT-23
OT-143
OT-323
OD-323
ODS-1279
MA4E2054E-1068T
LG diode 831
MA4E2054A-287T
MA4E2054B
MA4E2054B-287T
equivalent of v6 surface mount diode
DIODE 1581
|
Untitled
Abstract: No abstract text available
Text: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features Rev. V6 Common Case styles Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity
|
Original
|
PDF
|
MA46410
MA46485
MA46450,
MA46470
MA46450
|
MASW-001100-1190
Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G
Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt
|
Original
|
PDF
|
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
50MHz
20GHz
33dBm
MASW-001100-1190,
MASW-002100-1191
MASW-001100-1190
MASW-001100-11900G
MASW-002100-11910G
MASW-003100-1192
MASW-003100-11920G
|
Untitled
Abstract: No abstract text available
Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs
|
Original
|
PDF
|
MA4SW410
30dBm
MA4SW410
|
MASW-001100-1190
Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation
|
Original
|
PDF
|
MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
50MHz
20GHz
33dBm
MASW-001100-1190,
MASW-002100-1191
MASW-001100-1190
MASW-001100-11900G
MASW-002100-11910G
MASW-003100-1192
MASW-003100-11920G
DSAE001512
|
Untitled
Abstract: No abstract text available
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
|
Original
|
PDF
|
MA4SW110
MA4SW210
MA4SW310
50MHz
20GHz
30dBm
MA4SW110
MA4SW110,
|
MA4GP907
Abstract: 10ghz pin diode
Text: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL
|
Original
|
PDF
|
MA4GP907
MA4GP907
10ghz pin diode
|
MASW-000553-13220G
Abstract: macom rf switch MASW-000553 macom pin diode application
Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state
|
Original
|
PDF
|
-10mA
MASW-000553-13220G
macom rf switch
MASW-000553
macom pin diode application
|
Untitled
Abstract: No abstract text available
Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES • Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption
|
Original
|
PDF
|
50GHz
|
MA4AGSW3
Abstract: 10GHZ M541
Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES • Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.8 dB Insertion Loss, 31 dB Isolation at 50 GHz Low Current consumption. -10mA for low loss state
|
Original
|
PDF
|
-10mA
MA4AGSW3
10GHZ
M541
|
Untitled
Abstract: No abstract text available
Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features • Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance
|
Original
|
PDF
|
MASW-002103-1363
MASW-002103-1363
|
Untitled
Abstract: No abstract text available
Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features • Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance
|
Original
|
PDF
|
MASW-002103-1363
MASW-002103-1363
|
M513
Abstract: MASW-000822-12770T S2803
Text: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA
|
Original
|
PDF
|
MASW-000822-1277OT
16-Lead
M513
MASW-000822-12770T
S2803
|
LTC2990
Abstract: 2991 0x09-0x1B LTC2991IMS-PBF CET3904
Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES DESCRIPTION n The LTC 2991 is used to monitor system temperatures, voltages and currents. Through the I2C serial interface, the eight monitors can individually measure supply voltages and can be paired for differential measurements of current sense resistors or temperature sensing transistors.
|
Original
|
PDF
|
LTC2991
10ppm
10ppm/
LTC6102HV)
12-Bit
2991fa
LTC2990
2991
0x09-0x1B
LTC2991IMS-PBF
CET3904
|
|
|
Untitled
Abstract: No abstract text available
Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES n n n n n n n n n n n n DESCRIPTION Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor
|
Original
|
PDF
|
LTC2991
10ppm
LTC1392
LTC2970
LTC2978
LTC4151
LTC2487
LM134
|
Untitled
Abstract: No abstract text available
Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor Features n n n n n n n n n n n n Description Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor
|
Original
|
PDF
|
LTC2991
14-Bit
10ppm/Â
16-Lead
LTC4151
12-Bit
LTC2487
16-Bit
LM134
com/LTC2991
|
Untitled
Abstract: No abstract text available
Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor Features n n n n n n n n n n n n Description Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor
|
Original
|
PDF
|
LTC2991
14-Bit
10ppm/Â
16-Lead
LTC2945
12-Bit
24-Bit
LTC2487
16-Bit
LM134
|
Untitled
Abstract: No abstract text available
Text: All MikroElektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to
|
Original
|
PDF
|
|
MASW-000834-13560T
Abstract: MADR-008851-000100 MASW-000834 0603CS-27NXJLW S2083 madr-008851
Text: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Functional Diagram TOP VIEW • Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA
|
Original
|
PDF
|
MASW-000834-13560T
2010MHz
MASW-000834-13560T
MADR-008851-000100
MASW-000834
0603CS-27NXJLW
S2083
madr-008851
|
diode marking v6
Abstract: No abstract text available
Text: Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS • Low RDS on 1 Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V
|
Original
|
PDF
|
BUY25CS54A-01
diode marking v6
|
Untitled
Abstract: No abstract text available
Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state
|
Original
|
PDF
|
50GHz
-10mA
|
Untitled
Abstract: No abstract text available
Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state
|
Original
|
PDF
|
50GHz
-10mA
|
AFFICHEUR LCD 16
Abstract: multiplexeur
Text: Les systèmes de développement MikroElektronika sont des outils irremplaçables pour le développement et la programmation des microcontrôleurs. Un choix attentif des composants ainsi que l’utilisation d’appareils de dernière génération pour le montage et le test constitue la meilleure garantie de fiabilité
|
Original
|
PDF
|
|
MA4GP907
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation
|
Original
|
PDF
|
MA4GP907
MA4GP907
|
