AT10-0019
Abstract: AT10-0019-TB AT10-0019TR M513 MAAV-007088-000100
Text: AT10-0019 PIN Diode Based Variable Attenuator, 50 - 1000 MHz Rev. V6 Features • • • • • • Functional Schematic High Dynamic Range: 42dB Typical Flat Attenuation vs. Frequency High P1dB Compression Operates on a Single +5V Supply: 50 Ohm Nominal Impedance
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AT10-0019
SOW-16
AT10-0019
AT10-00sed
AT10-0019-TB
AT10-0019TR
M513
MAAV-007088-000100
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MASW-001100-1190
Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G
Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt
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MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
50MHz
20GHz
33dBm
MASW-001100-1190,
MASW-002100-1191
MASW-001100-1190
MASW-001100-11900G
MASW-002100-11910G
MASW-003100-1192
MASW-003100-11920G
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Untitled
Abstract: No abstract text available
Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs
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MA4SW410
30dBm
MA4SW410
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MASW-001100-1190
Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation
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MASW-001100-1190
MASW-002100-1191
MASW-003100-1192
50MHz
20GHz
33dBm
MASW-001100-1190,
MASW-002100-1191
MASW-001100-1190
MASW-001100-11900G
MASW-002100-11910G
MASW-003100-1192
MASW-003100-11920G
DSAE001512
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Untitled
Abstract: No abstract text available
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
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MA4SW110
MA4SW210
MA4SW310
50MHz
20GHz
30dBm
MA4SW110
MA4SW110,
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MA4GP907
Abstract: 10ghz pin diode
Text: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL
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MA4GP907
MA4GP907
10ghz pin diode
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diode V6 57
Abstract: No abstract text available
Text: SKN 60F THYRISTOR BRIDGE,SCR,BRIDGE Stud diode Fast Recovery Rectifier Diode SKN 60F SKR 60F Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>-9 @$A BC &=- BD $EFG &=+-) 1+ 91>-H $EIG
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C7S56
Q577R
diode V6 57
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diode marking v6
Abstract: No abstract text available
Text: Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS • Low RDS on 1 Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V
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BUY25CS54A-01
diode marking v6
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TSSOP8 Package
Abstract: international rectifier power mosfets catalog mosfet catalog international rectifier
Text: PD-96020A IRF7754PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V
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PD-96020A
IRF7754PbF
IRF7754TRPBF
23-Jun-2011
TSSOP8 Package
international rectifier power mosfets catalog
mosfet catalog international rectifier
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diode v6 90
Abstract: diode V6 V6 diode
Text: Part Number: XTNI30W T-1 3mm INFRARED EMITTING DIODE Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).
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XTNI30W
XDSA2672
diode v6 90
diode V6
V6 diode
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diode V6
Abstract: diode v6 90 v6 diode diode V6 on
Text: Part Number: XTNI30BF T-1 3mm INFRARED EMITTING DIODE Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).
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XTNI30BF
XDSA2673
diode V6
diode v6 90
v6 diode
diode V6 on
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MA4GP907
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation
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MA4GP907
MA4GP907
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Untitled
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation
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MA4GP907
MA4GP907
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diode V6
Abstract: mavr MAVR-002300-12790T MAVR-002400-12790T MAVR-002500-12790T MAVR-002600-12790T MA4ST2000 MA4ST2200-1141T MAVR-002200-12790T IR 4609
Text: Also Offering RoHs Compliant Equivalent Parts MA4ST2000 Series Ultra High Ratio Si Hyperabrupt Varactor Diode SC-70 3 Features • • • • Ultra High Capacitance Ratio, C(0.1V /C(4.7V) =18:1 C(0.1V)/C(2.7V) = 12:1 Surface Mount Plastic Packages : SC-79, SOD-323,
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MA4ST2000
SC-70
SC-79,
OD-323,
SC-70,
OD-323
SC-79
diode V6
mavr
MAVR-002300-12790T
MAVR-002400-12790T
MAVR-002500-12790T
MAVR-002600-12790T
MA4ST2200-1141T
MAVR-002200-12790T
IR 4609
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EN 60825-1
Abstract: No abstract text available
Text: SPECDILAS IR series SPECDILAS IR-XXXX LASERS FOR INFRARED SPECTROSCOPY Single mode laser diode with double-hetero-structure for high resolution spectroscopy available for following wavenumbers: 1000 – 3400 cm-1 2.94 – 10 µm continuous operation (cw)
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2933 Voltage Regulator
Abstract: 2933
Text: LTC2933 Programmable Hex Voltage Supervisor with EEPROM FEATURES DESCRIPTION Supervises 6 Power Supplies n I2C Adjustable UV and OV Trip Points n Guaranteed Threshold Accuracy: ±1% n I2C/SMBus Interface n Internal EEPROM n 256 Programmable Thresholds per Channel
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LTC2933
16-Lead
LTC2977
16-Bit
LTC2974
LTC2970
2933f
com/LTC2933
2933 Voltage Regulator
2933
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TEA2031
Abstract: colour tv circuit diagram blocking DIODE V6 sgs 8 r 15 TEA2031A 1N4148 KEYSTONE 500
Text: TEA2031A COLOR TV EAST-WEST CORRECTION . . . . . . BUILD IN FRAME PARABOLA FROM EXTERNAL SAW-TOOTH PARABOLA CORRECTION ADJUSTMENT KEYSTONE CORRECTION ADJUSTMENT LINE SIZE ADJUSTMENT LINE DYNAMIC CORRECTION POSSIBILITY beam current D CLASS OUTPUT MODULATOR WITH
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TEA2031A
TEA2031A
TEA2031
colour tv circuit diagram
blocking DIODE V6
sgs 8 r 15
1N4148
KEYSTONE 500
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TEA2031A
Abstract: 1N4148
Text: TEA2031A COLOR TV EAST-WEST CORRECTION . . . . . . BUILD IN FRAME PARABOLA FROM EXTERNAL SAW-TOOTH PARABOLA CORRECTION ADJUSTMENT KEYSTONE CORRECTION ADJUSTMENT LINE SIZE ADJUSTMENT LINE DYNAMIC CORRECTION POSSIBILITY beam current D CLASS OUTPUT MODULATOR WITH
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TEA2031A
TEA2031A
1N4148
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fly-back
Abstract: sawtooth TEA2031A TEA2031 1N4148
Text: TEA2031A COLOR TV EAST-WEST CORRECTION . . . . . . BUILD IN FRAME PARABOLA FROM EXTERNAL SAW-TOOTH PARABOLA CORRECTION ADJUSTMENT KEYSTONE CORRECTION ADJUSTMENT LINE SIZE ADJUSTMENT LINE DYNAMIC CORRECTION POSSIBILITY beam current D CLASS OUTPUT MODULATOR WITH
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TEA2031A
TEA2031A
fly-back
sawtooth
TEA2031
1N4148
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Untitled
Abstract: No abstract text available
Text: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other
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MAX8588
T4866-1*
21-0141H
T4866
MAX8588ETM
MAX8588ETM-T
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1N4148
Abstract: MAX1724 MAX8588 MAX8588ETM
Text: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other
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MAX8588
MAX8588
1N4148
MAX1724
MAX8588ETM
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Untitled
Abstract: No abstract text available
Text: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other
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MAX8588
MAX8588
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Maxim PMIC
Abstract: FB 3307
Text: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other
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MAX8588
MAX8588
Maxim PMIC
FB 3307
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fairchild micrologic
Abstract: SH2002 Diode Transistor ScansUX983 FAIRCHILD DIODE diode 1-35 L V6
Text: SH2002 DTnL HIGH POWER DRIVER FAIRCHILD HYBRID CIRCUITS • LOGIC FLEXIBILITY.LATCHABLE 4 INPUT NAND WITH INHIBIT NOR INPUT PHYSICAL DIMENSIONS • HIGH CURRENT CAPABILITY . . . UP TO 150 mA TO-lOO • HIGH VOLTAGE CAPABILITY . . . 40 VOLTS LVCEO
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SH2002
C-10pF-WIRING
fairchild micrologic
Diode Transistor
ScansUX983
FAIRCHILD DIODE
diode 1-35 L V6
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