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    DIODE V6 81 Search Results

    DIODE V6 81 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE V6 81 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA4E1340

    Abstract: MA4E1340A-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E1340 Series V6 Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 70 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package


    Original     		PDF MA4E1340 OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E1340A-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143

    MA4E1339

    Abstract: MA4E1339A-1141T MA4E1339A-1146T MA4E1339A1-287T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T diode 1-35 L V6
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E1339 Series V6 Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 20 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Packages


    Original     		PDF MA4E1339 OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E1339A-1141T MA4E1339A-1146T MA4E1339A1-287T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T diode 1-35 L V6

    MA4E2054E-1068T

    Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS


    Original     		PDF MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E2054E-1068T LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T equivalent of v6 surface mount diode DIODE 1581

    Untitled

    Abstract: No abstract text available
    Text: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features Rev. V6 Common Case styles Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity


    Original     		PDF MA46410 MA46485 MA46450, MA46470 MA46450

    Untitled

    Abstract: No abstract text available
    Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs


    Original     		PDF MA4SW410 30dBm MA4SW410

    MASW-001100-1190

    Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
    Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation


    Original     		PDF MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512

    Untitled

    Abstract: No abstract text available
    Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs


    Original     		PDF MA4SW110 MA4SW210 MA4SW310 50MHz 20GHz 30dBm MA4SW110 MA4SW110,

    MA4GP907

    Abstract: 10ghz pin diode
    Text: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL


    Original     		PDF MA4GP907 MA4GP907 10ghz pin diode

    Untitled

    Abstract: No abstract text available
    Text: MA4ST1200 Series Low Tuning Voltage / Low Rs Silicon Hyperabrupt Varactor Diode M/A-COM Products Rev. V6 Features SC-70 3 lead • Low Series Resistance at Low Tuning Voltages • High Capacitance Ratio at Low Tuning Voltages • Surface Mount Plastic Packages : SC-79, SOD323, SC-70 ( 3L )


    Original     		PDF MA4ST1200 SC-70 SC-79, OD323, OD-323 SC-79

    MASW-000553-13220G

    Abstract: macom rf switch MASW-000553 macom pin diode application
    Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state


    Original     		PDF -10mA MASW-000553-13220G macom rf switch MASW-000553 macom pin diode application

    Untitled

    Abstract: No abstract text available
    Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance


    Original     		PDF MASW-002103-1363 MASW-002103-1363

    Untitled

    Abstract: No abstract text available
    Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance


    Original     		PDF MASW-002103-1363 MASW-002103-1363

    MA4P274-1141T PIN Diodes

    Abstract: diode V6 Ma4P45 MA4P7436-1141T diode 14-V6 MA4P7447-287T
    Text: Also Offering RoHs Compliant Equivalent Parts Surface Mount Plastic PIN Diodes SMPP Series V6 Features • Industry Standard Surface Mount Packages • Lead-Free RoHS Compliant Equivalents Available with 260 °C Reflow Compatibility • Low Loss, High Isolation Switching Diodes


    Original     		PDF MA4P278 MA4P7438 MA4P282 MA4P7447 MA4P274 MA4P7455 MA4P274-1141T PIN Diodes diode V6 Ma4P45 MA4P7436-1141T diode 14-V6 MA4P7447-287T

    SMD package code V12

    Abstract: tda 1050 P-DSO-20 diode v6 33 SMD code V12 v1-2 V9 smd diode diode V6 81 DIODE V6 03 SMD R518 DIODE
    Text: Video IF with FPLL, MAC State and Vision Carrier Output TDA 6051-5X Preliminary Data Bipolar IC Features ● Active multistandard video IF with FPLL demodulator ● 12-MHz bandwidth ● MAC state ● Picture carrier output for TDA 6048-5X P-DSO-20 Type Ordering Code


    Original     		PDF 6051-5X 12-MHz 6048-5X P-DSO-20 Q67000-A5125 6048-5X. V19-20 SMD package code V12 tda 1050 P-DSO-20 diode v6 33 SMD code V12 v1-2 V9 smd diode diode V6 81 DIODE V6 03 SMD R518 DIODE

    Untitled

    Abstract: No abstract text available
    Text: All MikroElektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to


    Original     		PDF

    AFFICHEUR LCD 16

    Abstract: multiplexeur
    Text: Les systèmes de développement MikroElektronika sont des outils irremplaçables pour le développement et la programmation des microcontrôleurs. Un choix attentif des composants ainsi que l’utilisation d’appareils de dernière génération pour le montage et le test constitue la meilleure garantie de fiabilité


    Original     		PDF

    macom marking

    Abstract: MAcom device marking diode marking v6 V6 marking varactor diode
    Text: MAVR-000200 Series Low-Voltage / High Q Si Hyperabrupt Varactors Rev. V6 Features • Surface Mount Packages SOT-23, SC70 3LD, SOD-323, SC-79 • High Q at Low Voltages • High Capacitance Ratio at Low Voltages • SPC Process for Superior C-V Repeatability


    Original     		PDF MAVR-000200 OT-23, OD-323, SC-79) OD-323 SC-79 OD-323 macom marking MAcom device marking diode marking v6 V6 marking varactor diode

    060inches

    Abstract: in402 MA4P4006B-402
    Text: MA4P HIPAX High Power PIN Diodes RoHs Compliant Rev. V6 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding


    Original     		PDF J-STD-02 060inches in402 MA4P4006B-402

    MA4GP907

    Abstract: No abstract text available
    Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation


    Original     		PDF MA4GP907 MA4GP907

    Untitled

    Abstract: No abstract text available
    Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation


    Original     		PDF MA4GP907 MA4GP907

    Untitled

    Abstract: No abstract text available
    Text: All Mikroelektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4P HIPAX High Power PIN Diodes RoHs Compliant Rev. V6 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features •     Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity


    Original     		PDF MA46410 MA46485 MA46450, MA46470 MA46450

    GALVANOMETER

    Abstract: uaf1025 taximeter Speedometer and Mileage Indicator SAF1025
    Text: UAF1025 Speedometer and Mileage Indicator The UAF1025 bipolar integrated circuit is designed for use in electronic speedometer and mileage indicators in auto­ mobiles. The UAF1025 consists primarily of the following compo­ nents: - Monostable with Schmitt trigger input


    OCR Scan     		PDF UAF1025 UAF1025 fl2711 G003flbfl GALVANOMETER taximeter Speedometer and Mileage Indicator SAF1025