Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA8S03G RoHS Device Voltage: 10Volts Current: 50 mA Package (SOT-23) Feature Marking “ CDA8 “ Schematic This diode network is designed to provide an integrated solution for the active termination of
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CDA8S03G
10Volts
OT-23)
MDS0903007A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA2Q20-G RoHS Device C 0212 CDA2Q20 Voltage: 10Volts Current: 25 mA Package (QSOP-20) Feature This diode network is designedto provide seventeenchannels for active termination of high-speed data signals to eliminate
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CDA2Q20-G
CDA2Q20
10Volts
QSOP-20)
MDS0903001A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designed to provide six channels for active termination of high-speed data signals to eliminate signal undershoot and
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CDA6N08G
MDS0903005A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA2Q20G RoHS Device C 0212 CDA2Q20 Voltage: 10Volts Current: 25 mA Package (QSOP-20) Feature This diode network is designed to provide seventeen channels for active termination of high-speed data signals to eliminate
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CDA2Q20G
CDA2Q20
10Volts
QSOP-20)
MDS0903001A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA7Q24-G RoHS Device Package (QSOP-24) Feature Schematic This diode network is designed to provide eighteen channels for active termination of high-speed data signals to 0212 CDA7Q24 C Voltage: 13 Volts
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CDA7Q24-G
CDA7Q24
QSOP-24)
MDS0903006A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA7Q24G RoHS Device C Voltage: 13 Volts Current: 50 mA Package (QSOP-24) Feature Schematic This diode network is designed to provide eighteen channels for active termination of high-speed data
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CDA7Q24G
CDA7Q24
QSOP-24)
MDS0903006A
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Untitled
Abstract: No abstract text available
Text: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08-G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designedto provide six channels for active termination of high-speed data signals to eliminate signal undershootand
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CDA6N08-G
MDS0903005A
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usb002
Abstract: No abstract text available
Text: 05244 USB002 Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE STEERING DIODE ARRAY DESCRIPTION The USB002 is an ultra low capacitance 0.6pF steering diode array. This device provides circuit protection for interfaces and wireless bus applications and portable electronics. The USB002 is ideally suited to protect USB data
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USB002
USB002
OT-543
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Untitled
Abstract: No abstract text available
Text: 05244 USB002 Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE STEERING DIODE ARRAY DESCRIPTION T USB F IO T ESD T EFT USB IEC ESD SOT SOT USB USB EFT A T USB PACKAGE APPLICATIONS FEATURES • • • • • • • • • IEC T C IEC C IEC ESD P
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USB002
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smd D3e
Abstract: MARKING D3E D3E SMD
Text: RB411D Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 2 9+0 2 1,9±0 2 Features 0 95 0 9I • available in SMD3 (SMD, SC-59) package (similar to SOT-23)
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RB411D
SC-59)
OT-23)
RB411D
smd D3e
MARKING D3E
D3E SMD
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S4 DIODE
Abstract: DIODE S4 marking code s4 diode diode MARKING CODE S4 MAM172 DIODE marking S4 DIODE s4 marking code smd diode S4 28
Text: Short-form product specification Philips Semiconductors BBY62 Double variable capacitance diode QUICK REFERENCE DATA APPLICATIONS • Electronic tuners using SMD technology. SYMBOL CONDITIONS PARAMETER MIN. TYP. MAX. UNIT - - 28 V Per diode DESCRIPTION Double variable capacitance diode in
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BBY62
OT143
MAM172
S4 DIODE
DIODE S4
marking code s4 diode
diode MARKING CODE S4
MAM172
DIODE marking S4
DIODE s4 marking code
smd diode S4 28
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diode BAND
Abstract: DAN235K
Text: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1) Designed for mounting on small surface areas (SMD3) 2)High reliability •Construction Band switching diodes
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DAN235K
100MHz
diode BAND
DAN235K
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29 DIODE SMD CODE MARKING
Abstract: diode smd marking "147"
Text: SIEMENS BB 659 Silicon Tuning Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure
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Q62702-B0875
Q62702-B0854
SCD-80
29 DIODE SMD CODE MARKING
diode smd marking "147"
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed B A S 16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse voltage 75 V V RRM repetitive peak reverse
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OT323
BAS16W
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Untitled
Abstract: No abstract text available
Text: MINI-MELF-SMD Silicon Diode 1N4148UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. LL-34/35 MINI MELF Features Surface Mo un t P ac kag e D O- 2 13 AA
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1N4148UR-1
DO-35
Mil-S-19500/116
LL-34/35
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IR LFN
Abstract: D1FK70 smd diode ss 501 SMD MARKING LFN ir smd m7 diode super fast diode smd marking "OA" smd diode 1f diode smd marking VD
Text: Super Fast Recovery Diode Single Diode m tm m D1FK70 o u tlin e 700V 0.8A Feature • • • • • /JvS JS M D • S iS Œ • Vrm =700V Small SMD High Voltage Low Noise Vrm=700V Main Use • DC/D C o y it—9 • iS Iâ .F A lÆ f ê S • • • •
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D1FK70
J532-1)
IR LFN
D1FK70
smd diode ss
501 SMD MARKING
LFN ir
smd m7
diode super fast
diode smd marking "OA"
smd diode 1f
diode smd marking VD
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1PS193
Abstract: ML834 SC59 marking f3t 14E marking code SMD
Text: N AUER P H I L I P S / D I S C R E T E bTE » m ^53=131 0027101 Philips Semiconductors D?T H i A P X Preliminary specification 1 P S 193 High sp eed dio de FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application.
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1PS193
10the
1PS193
ML834
SC59
marking f3t
14E marking code SMD
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Untitled
Abstract: No abstract text available
Text: LL4454 or 1N4454UR-1 M INI-M ELF-SMD Applications ID Silicon Switching Diode Used in general purpose applications, where performance, space and switching speed are important. 1N4454UR-1 / LL4454 LL-34/35 MINI-MELF SMD Package DO-213AA (nominal dimensions)
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LL4454
1N4454UR-1
1N4454UR-1
LL-34/35
DO-213AA)
DO-35
Mil-S-19500
100mA,
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Diode marking 27C
Abstract: Ss 24 DIODE SMD SMD Marking jx diode smd marking jx MARKING CL4 smd marking YF smd diode 27c diode smd marking VD mark g1f
Text: Schottky Barrier Diode Single Diode m tm m DG1S4 o u tlin e Package :G 1 F Unu:mm Weight O.Ollii Typ 4 0 V 1A 35 <2) Feature •Î8/J\5!JSMD • • Ultra-small SMD • Ultra-thin PKG=0.8mm • Low VF-0.55V 0.8mm • ô V f =0.55V i |L71 C a th o d e m a rk
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160mm1)
cj532-d
Diode marking 27C
Ss 24 DIODE SMD
SMD Marking jx
diode smd marking jx
MARKING CL4
smd marking YF
smd diode 27c
diode smd marking VD
mark g1f
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smd diode schottky code marking 2F
Abstract: smd diode schottky code marking nu T13c marking smd NU smd code marking 4A diode smd k9 MARKING JM smd diode marking 325 smd marking code nu
Text: Schottky Barrier Diode Single Diode m tm m o u tlin e Package : 2F D3FP3 Unit-mm Weight 0.16g Typ ij y -K -7 -9 30V 3A / Cathode mark Feature • Small SMD • Ultra-Low Vf=0.4V • K y T 'J H f f iS K it • Reverse connect protection for DC power source
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J532-1)
smd diode schottky code marking 2F
smd diode schottky code marking nu
T13c
marking smd NU
smd code marking 4A
diode smd k9
MARKING JM
smd diode marking 325
smd marking code nu
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DIODE vn SMD
Abstract: No abstract text available
Text: bbS3^31 005b3fl7 7SS MARX Philips Semiconductors Preliminary specification BB131 VHF variable capacitance diode N AHLR PHILIPS/DISCRETE DESCRIPTION bTE D — • QUICK REFERENCE DATA The BB131 is a silicon variable capacitance diode in planar technology, intended for use as a
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005b3fl7
BB131
BB131
OD323.
M8C777
DIODE vn SMD
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Untitled
Abstract: No abstract text available
Text: MINI-MELF-SMD o Applications Silicon Diode L L 4 1 5 0 1 N r 5 0 U 4 1 R Switching - 1 I D Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXZTXV and S level per
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MIL-S-19500/437
LL-34/35
DO-213AA)
DO-35
Mil-S-19
4031-B
1N4150UR-1
DO-213AA
1N4150)
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a17 smd diode
Abstract: marking smd NU JT MARKING smd marking MY SM3 DIODE
Text: Schottky Barrier Diode Single Diode m tm m o u tlin e Package :G1F DG1M3A Unu:mm W eight O .O llii Typ in 30V 1.5A Feature • g /J 'fflS M D • Ultra-small SMD • |g n i^ = 0 .8 m m • Ultla-thin PKG=0.8mm • < 5V f = 0 .4 6 V • Low V f-0 .46V • 1KIr = 0.05mA
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tVU-71-Â
J53Z-1)
a17 smd diode
marking smd NU
JT MARKING
smd marking MY
SM3 DIODE
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IMN11
Abstract: UMN1N FMN1
Text: Ultra High-Speed Switching Diode Array FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N •Features 1 Three or four diodes contained in sam e area as SMD3 and UMD3. 2)Can be mounted using automatic mounters. 3)AII diodes have the same characteristics.
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FMN1/FMP1/IMN10/IMN11/IMP11
UMN1N/UMP1N/UMN11N/UMP11N
100ns
DD1S711
IMN11
UMN1N
FMN1
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