HFA45HC120C
Abstract: No abstract text available
Text: PD-20375A HFA45HC120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V
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Original
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PD-20375A
HFA45HC120C
675nC
HFA45HC120C
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PDF
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HFA45HI120C
Abstract: No abstract text available
Text: PD-20374A HFA45HI120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V
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Original
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PD-20374A
HFA45HI120C
675nC
HFA45HI120C
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PDF
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HFA35HB120
Abstract: No abstract text available
Text: PD-20370 HFA35HB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets
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Original
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PD-20370
HFA35HB120
HFA35HB120
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PDF
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Untitled
Abstract: No abstract text available
Text: SIDC81D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC81D120H8 VR IF
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Original
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SIDC81D120H8
L4061C,
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PDF
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Untitled
Abstract: No abstract text available
Text: SIDC53D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC53D120H8 VR IF
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Original
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SIDC53D120H8
L4059C,
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-20374A HFA45HI120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V
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Original
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PD-20374A
HFA45HI120C
675nC
device10)
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-20375A HFA45HC120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V
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Original
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PD-20375A
HFA45HC120C
675nC
device10)
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-20370A HFA35HB120 Ultrafast, Soft Recovery Diode FRED VR = 1200V Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets vF = 3.1V Qrr = 510nC
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Original
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PD-20370A
HFA35HB120
510nC
5M-1994.
O-254AA.
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PDF
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HFA35HB120C
Abstract: No abstract text available
Text: PD-20371A PRELIMINARY TM HEXFRED HFA35HB120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets
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Original
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PD-20371A
HFA35HB120C
370nC
HFA35HB120C
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PDF
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HFA35HB120C
Abstract: No abstract text available
Text: PD - 20371A PRELIMINARY TM HEXFRED HFA35HB120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets
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Original
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0371A
HFA35HB120C
370nC
HFA35HB120C
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PDF
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IRFP250 pin out
Abstract: HFA35HB120 IRFP250 PD-20370A
Text: PD-20370A HFA35HB120 Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 1200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets vF = 3.1V Qrr = 510nC
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Original
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PD-20370A
HFA35HB120
510nC
5M-1994.
O-254AA.
IRFP250 pin out
HFA35HB120
IRFP250
PD-20370A
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PDF
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SIDC06D120F6
Abstract: No abstract text available
Text: Preliminary SIDC06D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120F6 1200V IF C Applications:
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Original
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SIDC06D120F6
Q67050-A4183A001
4345M,
SIDC06D120F6
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PDF
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SIDC06D120E6
Abstract: No abstract text available
Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:
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Original
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SIDC06D120E6
Q67050-A4122A001
4342P,
SIDC06D120E6
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PDF
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1200v 3A
Abstract: SIDC03D120H6
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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Original
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SIDC03D120H6
Q67050-A4156A001
4372S,
1200v 3A
SIDC03D120H6
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PDF
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SIDC03D120F6
Abstract: No abstract text available
Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:
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Original
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SIDC03D120F6
Q67050-A4168A001
4375M,
SIDC03D120F6
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PDF
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SIDC08D120F6
Abstract: No abstract text available
Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:
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Original
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SIDC08D120F6
Q67050-A4169A001
4355M,
SIDC08D120F6
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PDF
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SIDC08D120F6
Abstract: No abstract text available
Text: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:
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Original
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SIDC08D120F6
Q67050-A4169A001
4355M,
SIDC08D120F6
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PDF
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SIDC06D120E6
Abstract: No abstract text available
Text: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications:
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Original
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SIDC06D120E6
Q67050-A4122A001
4342P,
SIDC06D120E6
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PDF
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HFA40HF120C
Abstract: No abstract text available
Text: PD - 91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC
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Original
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HFA40HF120C
370nC
dev10)
HFA40HF120C
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PDF
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HFA40HF120C
Abstract: No abstract text available
Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC
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Original
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PD-91797
HFA40HF120C
370nC
HFA40HF120C
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC
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Original
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PD-91797
HFA40HF120C
370nC
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PDF
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SIDC03D120F6
Abstract: No abstract text available
Text: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications:
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Original
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SIDC03D120F6
Q67050-A4168A001
4375M,
SIDC03D120F6
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PDF
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SIDC03D120H6
Abstract: No abstract text available
Text: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications:
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Original
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SIDC03D120H6
Q67050-A4156A001
4372S,
SIDC03D120H6
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PDF
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HFA40HF120
Abstract: PD203
Text: PD-20376 HFA40HF120 HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 3.1V Qrr = 510 nC CATHODE
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Original
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PD-20376
HFA40HF120
HFA40HF120
PD203
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PDF
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