diode marking w9
Abstract: W9 diode diode w9 marking w9 diode BAS16WS marking CODE w9 marking w9
Text: BAS16WS Small Signal Diodes PINNING PIN Features • Silicon Epitaxial Planar Diode • Fast switching diode DESCRIPTION 1 Cathode 2 Anode 2 1 W9 Top View Marking Code: "W9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Tj = 25OC Parameter
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BAS16WS
OD-323
OD-323
diode marking w9
W9 diode
diode w9
marking w9 diode
BAS16WS
marking CODE w9
marking w9
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diode marking w9
Abstract: W9 diode BAS16WS marking W9 marking CODE w9
Text: BAS16WS Small Signal Diodes PINNING PIN 1 Cathode 2 Anode Features • Silicon Epitaxial Planar Diode • Fast switching diode DESCRIPTION 2 1 W9 Top View Marking Code: "W9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Tj = 25OC Parameter
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BAS16WS
OD-323
OD-323
diode marking w9
W9 diode
BAS16WS
marking W9
marking CODE w9
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W9 diode
Abstract: diode marking w9 BAS16WS
Text: BAS16WS SILICON EPITAXIAL PLANAR SMALL SIGNAL DIODE Features • Fast switching diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W9 Top View Marking Code: "W9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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BAS16WS
OD-323
OD-323
W9 diode
diode marking w9
BAS16WS
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diode marking w9
Abstract: W9 diode BAS16WS
Text: BAS16WS SILICON EPITAXIAL PLANAR SMALL SIGNAL DIODE Features • Fast switching diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W9 Top View Marking Code: "W9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol
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BAS16WS
OD-323
OD-323
diode marking w9
W9 diode
BAS16WS
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Untitled
Abstract: No abstract text available
Text: JOG-01144 OKI Electronics Components Rev.1. [Mar. 2004] Preliminary OL4204N-50-P10-W90 1490+/-10nm 50mW Pulsed MQW Laser Diode DIL Module with SMF. 1. DESCRIPTION OL4204N-50-P10-W90 is a 1490nm Laser Diode in DIL package with SMF. 2. FEATURES • Fiber output : Po=50mW
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JOG-01144
OL4204N-50-P10-W90
/-10nm
OL4204N-50-P10-W90
1490nm
14-pin
50mnd
D-41460
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OL495N-60-P15-W90
Abstract: OL495N-60-Pxx-W90
Text: JOG-01120 Optical Components OL495N-60-Pxx-W90 Rev.4 [10. 2008] 1490n m Pulsed MQW Laser Diode Coaxial Module with SMF. 1. DESCRIPTION OL495N-60-Pxx-W90 is a 1490nm Laser Diode in coaxial package with SMF. 2. FEATURES Fiber output: Pf=60mW Pulsed MQW FP Laser
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JOG-01120
OL495N-60-Pxx-W90
1490n
OL495N-60-Pxx-W90
1490nm
OL495N-60-P15-W90
OL495N-60-P20-W90
OL495N-60-P15-W90
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OL495N-80-P20-W90
Abstract: 1490nm laser 1490n
Text: JOG-01167 Optical Components OL495N-80-P20-W90 Rev.2 [Mar. 2009] 1490n m Pulsed MQW Laser Diode Coaxial Module with SMF. 1.DESCRIPTION OL495N-80-P20-W90 is a 1490nm Laser Diode in coaxial package with SMF. 2. FEATURES • Fiber output: Pf=80mW · Pulsed MQW FP Laser
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JOG-01167
OL495N-80-P20-W90
1490n
OL495N-80-P20-W90
1490nm
1490nm laser
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OL495N-80-P20-W90
Abstract: 1480 nm laser diode 1490n
Text: JOG-01167 Rev.2 [Mar. 2009] Optical Components OL495N-80-P20-W90 1490n m Pulsed MQW Laser Diode Coaxial Module with SMF. 1.DESCRIPTION OL495N-80-P20-W90 is a 1490nm Laser Diode in coaxial package with SMF. 2. FEATURES • Fiber output: Pf=80mW · Pulsed MQW FP Laser
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JOG-01167
OL495N-80-P20-W90
1490n
OL495N-80-P20-W90
1490nm
1480 nm laser diode
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FS75R12W2T4
Abstract: No abstract text available
Text: Technische Information / technical information FS75R12W2T4_B11 IGBT-Module IGBT-modules EasyPACK 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FS75R12W2T4
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DIN 16901 130
Abstract: DIN ISO 2768-M DIN 16901 FS300R12KE3 DIN ISO 2768
Text: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS300R12KE3
DIN 16901 130
DIN ISO 2768-M
DIN 16901
FS300R12KE3
DIN ISO 2768
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DIN 16901 130
Abstract: DIN 16901 150 DIN 16901 FS225R12KE3 co6b DIN 16901 140
Text: Technische Information / technical information FS225R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS225R12KE3
DIN 16901 130
DIN 16901 150
DIN 16901
FS225R12KE3
co6b
DIN 16901 140
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DIN 16901 130
Abstract: DIN 16901 140
Text: Technische Information / technical information FS225R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS225R12KE3
DIN 16901 130
DIN 16901 140
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DIN 16901 130
Abstract: DIN 16901 DIN 16901 140 DIN ISO 2768-M ISO 2768-M FS300R12KE3
Text: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS300R12KE3
DIN 16901 130
DIN 16901
DIN 16901 140
DIN ISO 2768-M
ISO 2768-M
FS300R12KE3
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DIN 16901 130
Abstract: FS150R12KE3G DIN 16901 140 DO6a DIN 16901 150 DIN 16901
Text: Technische Information / technical information FS150R12KE3G IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS150R12KE3G
DIN 16901 130
FS150R12KE3G
DIN 16901 140
DO6a
DIN 16901 150
DIN 16901
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP63-05W Silicon PIN diode Preliminary specification 2001 Feb 22 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-05W PINNING FEATURES • High speed switching for RF signals PIN
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M3D102
BAP63-05W
OT323
BAP63-05W
MAM382
OT323)
125004/04/pp7
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BAP63
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP63-05W Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-05W PINNING FEATURES • High speed switching for RF signals PIN
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M3D102
BAP63-05W
OT323
BAP63-05W
MAM382
OT323)
125004/04/pp7
BAP63
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DIODE WJ SOD323
Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
Text: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.
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BZT52C2V0S-BZT52C39S
OD-323
BZT52C2V4S-BZT52C51S
BL/SSZDB019
DIODE WJ SOD323
BZT52C2V0S
BZT52C2V0S-BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
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DDB6U25N16VR
Abstract: 76w9
Text: Technische Information / technical information DDB6U25N16VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " 1 &' *+, 23 % " # 4$ 2 5 2 2 # 3 2 52 2
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DDB6U25N16VR
DDB6U25N16VR
76w9
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF200R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12MT4
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FF200R12MT4
Abstract: No abstract text available
Text: Technische Information / technical information FF200R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode IGBT-Wechselrichter / IGBT-inverter
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FF200R12MT4
FF200R12MT4
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
diode G21
marking G21 Z5
LD4RA
BZX84-C27
BZX84C18
g21 Transistor
BZX84C3V0
BZX84
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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FMMD914
BAV70
BAV74
BAV99
BAW56
100mA
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
diode Lz 66
diode LZ. 58
BZX84C20
BZX84-C27
diode marking w8
BZX84-C5V1
BZX84C18
diode marking x6
BZX84-C15
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w4w sot323
Abstract: W4W MARKING 13w marking sot marking code 12W CMSZDA33V 12w SOT 323 sot 12w
Text: Central" CMSZDA2V4 THRU CMSZDA47V Semiconductor Corp. SURFACE MOUNT DUAL, SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 275mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZDA2V4 Series silicon dual zener diode is a highly quality voltage regulator, connected in a
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CMSZDA47V
275mW
OT-323
OT-323
w4w sot323
W4W MARKING
13w marking
sot marking code 12W
CMSZDA33V
12w SOT 323
sot 12w
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