Untitled
Abstract: No abstract text available
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev B2, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor
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74HCxx
Abstract: IC-WJ-SO8 hcmos 74hcxx UF 407 Diode G003 G008 G010 iC-WJZ 470 uF 25 v Capacitor nF-47
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor
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D-55294
74HCxx
IC-WJ-SO8
hcmos 74hcxx
UF 407 Diode
G003
G008
G010
iC-WJZ
470 uF 25 v Capacitor
nF-47
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WJ 176
Abstract: G003 G008 G010 90 NF block diagram 74HCXX IC
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ♦ Laser diode driver for continuous and pulsed operation CW to 300 kHz up to 250 mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor
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IC 74hcxx
Abstract: G103 CUT LASER DRIVER G104 G101 G102 G301 440nF
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER FEATURES APPLICATIONS ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor ♦ Adjustable watchdog at the switching input to protect the
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300kHz)
250mA
F9-6135-9292-0
IC 74hcxx
G103
CUT LASER DRIVER
G104
G101
G102
G301
440nF
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Untitled
Abstract: No abstract text available
Text: iC-WJ, iC-WJZ LASER DIODE DRIVER FEATURES APPLICATIONS ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor ♦ Adjustable watchdog at the switching input to protect the
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300kHz)
250mA
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zd6v8
Abstract: G003 G008 G010 CG013
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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D-55294
zd6v8
G003
G008
G010
CG013
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Untitled
Abstract: No abstract text available
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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170KW
Abstract: No abstract text available
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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IN350,
170KW
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G003
Abstract: G008 G010 iC-WJ SO8
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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D-55294
G003
G008
G010
iC-WJ SO8
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MMBD201
Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Text: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD2010T~
2PHX34593F+
MMBD201
BD201
bd2010
BD301
MMBD2010
318D-03
MMBD101
MMBD2010T1
DIODE WJ SOt23
MMBD3010T1
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IHW20N120R3
Abstract: J127 9127 diode
Text: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHW20N120R3
J-STD-020
JESD-022
IHW20N120R3
J127
9127 diode
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DIODE WJ SOD323
Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
Text: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.
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BZT52C2V0S-BZT52C39S
OD-323
BZT52C2V4S-BZT52C51S
BL/SSZDB019
DIODE WJ SOD323
BZT52C2V0S
BZT52C2V0S-BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
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IHW20N120R3
Abstract: j127 H63-1 9P127 E393 h631 wg 2 fk
Text: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution
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IHW20N120R3
J-STD-020
JESD-022
IHW20N120R3
j127
H63-1
9P127
E393
h631
wg 2 fk
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DIODE WJ SOD323
Abstract: BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S
Text: Surface mount zener diode BZT52C2V0S-BZT52C39S FEATURES Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode. Ultra-small surface mount package. SOD-323 ORDERING INFORMATION
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BZT52C2V0S-BZT52C39S
OD-323
BZT52C2V4S-BZT52C51S
DIODE WJ SOD323
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52C4V7S
BZT52C2V0S
BZT52C2V0S-BZT52C39S
BZT52C2V4S
BZT52C2V7S
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lta 301
Abstract: No abstract text available
Text: ¡C-WJ, iC-WJZ •Haus LASER DIODE DRIVER FEATURES APPLICATIONS ♦ ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA ♦ Averaging control of laser power ♦ Simple adjustment of the laser power via external resistor
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300kHz)
250mA
500//A
lta 301
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EAF42
Abstract: ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV
Text: IËÂF42 PHILIPS DIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. ou B.F. DIODE-PENTODE mit veränderlicher Steilheit zur Ver wendung als HF-, ZF- oder NF-Verstärker
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EAF42
7R02634
110kil
EAF42
ech41
philips EAF 42
ECH 42
philips diagram fr 310
Philips schema
philips fr 310
RG211
ECH42
390SV
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Laser diode driver ic
Abstract: No abstract text available
Text: iC-WJ, iC-WJZ if f if ll LASER DIODE DRIVER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver for continuous and intermittent operation CW to 300kHz up to 250mA Averaging control of laser power Simple adjustment of the laser power via external resistor
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300kHz)
250mA
Laser diode driver ic
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amd FX PIN LAYOUT
Abstract: G701
Text: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
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200kHz
250mA
amd FX PIN LAYOUT
G701
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DL5060
Abstract: DL7500
Text: DATA SHEET NEC ELECTRON DEVICE LASER DIODE MODULE N D L 75 0 0 P 1 310 nm InGaAsP MQW-DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER DESCRIPTION N DL7500P ¡5 a 1 310 nm pulsed laser diode, that has a newly developed M ulti-Quantum Well MQW structure, DIP module
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DL7500P
NOL5061
NDL5762P
NDL5766P
NOL7500P
NDLS765P
NDL576SP1
L5060
L5070
NDL5071
DL5060
DL7500
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P RECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted D F6 Distributed Feed-Back laser diode B u tte rfly package module w ith optical isola
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NDL5653P
NDL5653P
NDL5600D
NDL5650D
NDL5600D1
NDL5650D1
NDL5604P
NDL5603P
NDL5654P
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B455
Abstract: NDL5081 IMDL5080 NDL5080 1310 nm laser diode
Text: 30E D I b42?52S I 002=1554 =1 r - ^ i - g T7 r N E C E L E C T R ONI CS LASER DIODE INC NDL5080 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N NDL5080 is a 1310 nm laser diode especially designed for optical data communications. The DC-PBH Double Channel Planar
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NDL5080
310nm
NDL5080
NDL5080,
NDL5081
NDL5080.
IMDL5080
b427S2S
NDLS100)
taM57S5S
B455
1310 nm laser diode
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: ÜîStsÊtxVW 7. Surface Mounting Device 7 0 S U tipe Super Past Recovery Diode Twin Diode Ifl-^ ä s E I OUTLINE DIMENSIONS DF20LC20U 200V 20A •S M D •e y -rx •trr3 5 n s •S R S * •D C / D C U V H - i ? • a n e . OA. •a « , s s. WjÉfèm mm
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DF20LC20U
SHINDENGEN DIODE
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se3-13
Abstract: No abstract text available
Text: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.
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SE313
SE313
se3-13
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dt61n
Abstract: DT18N td18n td36n
Text: Thyristor-diode-modules for current source inverters Type Vdrm V rrm It r m s m Itsm /¡2dt It a v M ^ C V TO rT (dí/dt)cr (dv/dt)cr R th J C RthCK ^vj max Outline V rrm (Thyr.) V (Diode) V A 10 ms, 10 ms tv j max Wj max 180 °el sin. tv j max tv j max DIN
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