"laser diode Driver Circuit"
Abstract: SFP Laser Driver
Text: Signal Conditioning/Calibration and Control Products X9530 Temperature Compensated Laser Diode Controller Description • SONET and SDH Transmission System Laser Diode Bias Control • 1G and 10G Ethernet, and Fibre Channel Laser Diode Driver Circuits The X9530 is a highly integrated laser diode bias controller
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X9530
256-tap,
100-tap,
64-tap,
256-tap
1024-tap
14-lead
"laser diode Driver Circuit"
SFP Laser Driver
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7493 counter
Abstract: X9312 X9C102 X9C103 X9110 X9258 X9259 X9520 X9521 X9522 X9523
Text: X9520 Laser Diode Control for Fibre Channel & Gigabit Ethernet RH0 Wiper Counter Register RW0 RL0 8 WP Applications 8-Bit Nonvolatile Memory Protect Logic Data Register SDA RH1 Constat Register Wiper Counter Register 4 Command Decode & Control Logic • Laser Diode Modules
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X9520
X9511
X9430
X9438
X9440
X9448
X9520
X9521
X9522
7493 counter
X9312 X9C102
X9C103
X9110
X9258
X9259
X9521
X9522
X9523
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Untitled
Abstract: No abstract text available
Text: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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HSCH-9161
HSCH-9162
HSCH-916x
HSCH916x
5989-6228EN
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TC611 Diode Model
Abstract: AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode
Text: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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HSCH-9161
HSCH-9162
HSCH-916x
HSCH916x
5989-6228EN
TC611 Diode Model
AGILENT TECHNOLOGIES 9161
AGILENT TECHNOLOGIES 9162
gamma detector
tc6* agilent
TC611
pn#2 hsch-9161
PN diode specifications
GaAs Detector Diode
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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OW43
Abstract: DF900R12IP4D u 1620 DF900 2n67 667 2N
Text: Technische Information / technical information DF900R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode
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DF900R12IP4D
OW43
DF900R12IP4D
u 1620
DF900
2n67
667 2N
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DF600R12IP4D
Abstract: diode 9-f 1N6760
Text: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode
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DF600R12IP4D
DF600R12IP4D
diode 9-f
1N6760
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DIODE WJ SOD323
Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
Text: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.
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BZT52C2V0S-BZT52C39S
OD-323
BZT52C2V4S-BZT52C51S
BL/SSZDB019
DIODE WJ SOD323
BZT52C2V0S
BZT52C2V0S-BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
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LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
327C53
1231423567896AB
LTC4098-3.6
se666
k3332
edt0145.6
SEH-01T-P0.6
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ifs75b12n3e4_b32
Abstract: No abstract text available
Text: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
ifs75b12n3e4_b32
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AK2573A
Abstract: AK2573AVB C101 620CH
Text: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)
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AK2573A]
AK2573A
MS0189-E-01>
AK2573A
AK2573AVB
C101
620CH
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Untitled
Abstract: No abstract text available
Text: BAS 19 . 21 Surface Mount Silicon Planar Small-Signal Diode Silizium-Planar-Diode für die Oberflächenmontage Nominal current – Nennstrom 200 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 85 V Plastic case Kunststoffgehäuse SOT-23
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OT-23
O-236)
25iterplatte
150/C
tter\bas21
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marking code C15
Abstract: AK2574 AK2574VB R132 R133
Text: ASAHI KASEI [AK2574] AK2574 156M Laser Diode Driver + APC for Burst Mode Features - 156M Laser Diode Driver for burst mode application - BIAS current switching - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor APC_FF
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AK2574]
AK2574
AK2574
MS0266-E-00>
marking code C15
AK2574VB
R132
R133
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UEL270
Abstract: UEL271 UEL127 M22001 UEL162 UEL273 UEL tdk organic light emitting diode
Text: High Performance Organic Light Emitting Diode Display Pure White, Mono-color Types and Full-color Types UEL Series TDK CORPORATION TDK CORPORATION High Performance Organic Light Emitting Diode Display Pure White, Mono-color Types and Full-color Types UEL Series
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2002/95/EC
100cd/m2
120cd/m2
11pin
UEL271
BSF-N01JE
UEL270
UEL271
UEL127
M22001
UEL162
UEL273
UEL tdk
organic light emitting diode
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DIODE WJ SOD323
Abstract: BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S
Text: Surface mount zener diode BZT52C2V0S-BZT52C39S FEATURES Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode. Ultra-small surface mount package. SOD-323 ORDERING INFORMATION
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BZT52C2V0S-BZT52C39S
OD-323
BZT52C2V4S-BZT52C51S
DIODE WJ SOD323
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52C4V7S
BZT52C2V0S
BZT52C2V0S-BZT52C39S
BZT52C2V4S
BZT52C2V7S
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H8 SOT-23
Abstract: marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23
Text: MOTOROLA SEMICONDUCTOR @ TECHNICAL SiIicon~ning Order this document by MMBV609LT1/D DATA Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–th~line application requiring back–to–back diode configuration for minimum
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MMBV609LT1/D
OW1-2447
2W609
MMBV609LTl~
H8 SOT-23
marking H8 SOT-23
MMBV609LT1
marking AM sot-23
marking SH SOT23
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Untitled
Abstract: No abstract text available
Text: Under development ● New product GH4837A1TG Infrared Laser Diode Infrared Eye-safe Laser Diode • Features ■ Absolute Maximum Ratings Tc=25℃ *1 (1) Wavelength : 830 nm(Typ.) Symbol Ratings Unit Forward Current(CW) Iop 1 A (3) Φ5.6mm CAN package
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GH4837A1TG
700mW
ET-140318
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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OCR Scan
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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bsm 300 ga 160 dn
Abstract: No abstract text available
Text: SIEMENS BYM 300 A 170 DN2 Diode Power Module Preliminary data • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 Type ^R25 BYM 300 A 170 DN2 1700V 380A
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C67070-A2901-A67
bsm 300 ga 160 dn
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BY228
Abstract: modulator circuit
Text: N AMER PHI LIP S/ DI S CR ET E b^E D • bbSB'iBl GÜ2fai*Sfl ÖOS ■ APX BY228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television
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BY228
OD-64.
BY228.
7Z77828
7Z77829
BY228
modulator circuit
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smd diode code WP
Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Text: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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Q62702-A1190
OD-323
50/60Hz,
smd diode code WP
diode smd marking WP
140KW
diode smd marking code WP
diode SMD CODE s 2A
schottky rectifier diode
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ESJC01-12B
Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
Text: ESJC01 9kV, 12kV : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. • : Features Small size
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ESJC01
ESJC01-09B
ESJC01-12B
ESJC01
ESJC0I-09B
ESX0I-09B
ESJC0I-098
IR 9515
a1t diode
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diode rectifier siemens
Abstract: No abstract text available
Text: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type
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2-02W
2-02W
Q62702-A1028
SCD-80
diode rectifier siemens
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