T1A 250v
Abstract: his-8a Jamicon capacitor bel t1a 250v m7a90 0711-PN UTWHS ee-25 tuv philips zener diode ltec capacitor
Text: SA06L48-V Specification MODEL NO.: CUSTOMER P/N: DESCRIPTION: ISSUED DATE: REVISION NO.: Page 1 of 1 SA06L48-V SWITCHING ADAPTER September 5, 2002 01 TABLE OF CONTENTS 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 INPUT REQUIREMENTS OUTPUT REQUIREMENTS EFFICIENCY PROTECTION REQUIREMENTS
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SA06L48-V
SA06L48-V
RD-SPEC/06L48-V
90Vac
264Vac
42S/Triad
04-0205C
0-0026A
10-0026B
T1A 250v
his-8a
Jamicon capacitor
bel t1a 250v
m7a90
0711-PN
UTWHS
ee-25 tuv
philips zener diode
ltec capacitor
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edi r diode
Abstract: diode Standard Recovery diode YS 040
Text: NVD NVDX ARRAYS NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS These diodes and arrays have been specifically designed for use in night vision and image intensifier equipment power supplies. They offer unusual characteristics that have not been previously available. As a result of a proprietary EDI diffusion process, they feature small size
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360MAX
edi r diode
diode Standard Recovery
diode YS 040
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RF-310T-11400
Abstract: cdm 12.1 laser l1210 RF-300CH CDM 12.3blc Philips cd loader L1210 rf310t11400 CDM 12.6 Philips RF-500TB-12560 tda1371
Text: C ON T E N T S 1 INTRODUCTION _ 1.1 2 C D S YS T E M S O L U T I O N S CD-ROM block-decoders _ 3.19 CD encoder _ 3.21 CD-Recordable _ 3.22 DACs, ADCs and ADDAs _ 3.27
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CCA110
SCB44
RF-310T-11400
cdm 12.1 laser
l1210
RF-300CH
CDM 12.3blc Philips
cd loader L1210
rf310t11400
CDM 12.6 Philips
RF-500TB-12560
tda1371
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b649
Abstract: SKM214
Text: s e MIKRO n Absolute Maximum Ratings Symbol Conditions ' V ds V dgr R gs = 20 ki2 Id Idm V gs Pd Tj, Tstg Visol humidity climate AC, 1 min, 200 iA DIN 40 040 DIN IEC 68T.1 Values Units 100 100 125 375 ±20 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V SEMITRANS M
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SKM214
b649
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Wf VQE 23 F
Abstract: WF VQE 23 D Wf VQE 23 E wf vqe 24 d WF vqe 24 e WF VQE 22 c WF VQE 22 d wf vqe 14 e wf vqe 24 f wf vqe 23
Text: 5EMIKR0N Absolute Maximum Ratings Symbol VcES VcGH lc ICM Vges P.o< Ti, Tag Visol humidity climate Values Conditions ' Rge = 20 k ii Tease = 25/80 "0 Tease ~ 25/80 C . tp — 1 ms per IGBT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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Untitled
Abstract: No abstract text available
Text: SIMOPAC MOSFET Module VDS lD ^ D S o n • • • • • • • BSM 244 F = 400 V = 2 x 45 A = 0.1 Q Power module Half-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 2 a ’ ) Type Ordering code
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C67076-A1155-A2
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistor VDS l0 ^ D S o n BUZ 230 = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancem ent mode • Package: T O -204A A (T O -3 )1) Type Ordering code BUZ 230 C 6 7 0 7 8 -A 1 105-A2 Maximum Ratings Parameter Symbol
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-204A
105-A2
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shindengen solenoid
Abstract: shindengen rectifier transistor power MOSFET
Text: Sales Branches and Distributors U.S.A. Shindengen America, Inc. Head Office 2985 E, Hillcrest Drive, Suite 140, W estlake Village, CA91362 U.S.A. Phone: 1 -805-373-1130 FAX: (1 )-805-373-3710 Chicago Office 411 Business C enter Drive, Suite 112, Mt. Prospect, IL 60056 U.S.A.
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CA91362
D-40479
shindengen solenoid
shindengen rectifier
transistor power MOSFET
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ss295
Abstract: No abstract text available
Text: SIEMENS BSS 295 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 295 ^DS 50 V Type BSS 295 BSS 295 BSS 295 Ordering Code Q62702-S603 Q67000-S238 Q67000-S105 1.4 A flbs(on)
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Q62702-S603
Q67000-S238
Q67000-S105
E6288
E6325
ss295
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Untitled
Abstract: No abstract text available
Text: Advanced Data High Voltage IGBT with Diode IXDH 20N120AU1 VCES = 1200 V iC25 = 30 A V CE sat typ = 2 5 VV SCSOA Capability Symbol Test Conditions V CES T j = 25°C to 150°C 1200 V Vco„ Tj = 25°C to 150°C; RaE = 1 MQ 1200 V v SES VGEM Continuous ±20
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20N120AU1
O-247
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VDS-500V
Abstract: No abstract text available
Text: Ti TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR íFl^G ^T aSD 00lt,743 S | 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL' d a t a SILICON N CHANNEL MOS TYPE ff-MOSl) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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0-40fi
100nA
300uA
VDDN400V
00A/ys
VDS-500V
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BSS124
Abstract: No abstract text available
Text: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 -2.5 V Pin 1 Pin 2 G Type BSS 124 Vos 400 V % 0.12 A Type BSS 124 Ordering Code Q67000-S172 %S(on) 28 0 Pin 3 D Package Marking TO-92 SS 124 S Tape and Reel Information
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Q67000-S172
E6288
BSS124
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MARKING SSG SOT23
Abstract: transistor marking 7002 TRANSISTOR 7002 marking code sSG SOT23
Text: SIEMENS SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0-8.2.0V Pin 1 Pin 2 Pin 3 ~G Type VDS b f lDS(on) Package Marking SN 7002 60 V 0.19 A 5Ü SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063
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OT-23
Q67000-S063
E6327
OT-23
GPS05557
MARKING SSG SOT23
transistor marking 7002
TRANSISTOR 7002
marking code sSG SOT23
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ103AL Vbs 50 V to 35 A ^bs<on
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O-220
BUZ103AL
C67078-S1357-A2
103AL
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor N channel Enhancem ent mode Avalanche-rated Type BUZ 344 fl • • • ¡D 100 V n 50 A ^ DS (on 0.035 SI Maxim um Ratings Param eter Continuous drain current, Tc = 25 "C Pulsed drain current, Tc = 25 ’C Avalanche current, lim ited by 7] max
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C67078-S3132-A2
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diode sy 710
Abstract: sy 710 diode transistor buz 90 transistor buz 350 buz90
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vbs 600 V b 4.5 A ^DS on Package Ordering Code 1 .6 « TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S1321-A2
D5155
diode sy 710
sy 710 diode
transistor buz 90
transistor buz 350
buz90
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218AA
C67078-A3205-A2
flS35bOS
235b05
623SbGS
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transistor Siemens 14 S S 92
Abstract: transistor 115 47e
Text: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code
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023SbOS
T-21-Z5
Q67000-S078
Q67000-S060
chap60
235b05
transistor Siemens 14 S S 92
transistor 115 47e
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MPB-1036-B11
Abstract: MBP1030B11 MBP-1035-B11 MPB-1035-B11 MBP-2034-B11 MBP2034-B11
Text: MESA BEAM LEAD PIN DIODES La I1IBZ metelicS " CORPORATION FEATURES • Low C apacitance • Low Resistance • Fast Switching • Rugged Construction
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250mWat
MPB-2030
MPB-2034
TFP-1034
MPB-1036-B11
MBP1030B11
MBP-1035-B11
MPB-1035-B11
MBP-2034-B11
MBP2034-B11
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D20B 200V 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT60D20B
O-247
O-247AD
B1986
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 61 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 61 A Vbs 400 V <d 11 A ^bs on 0.5 Í2 Package Ordering Code TO-220 AB C67078-S1341-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S1341-A3
fl235fc
-220A
GPT05155
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Untitled
Abstract: No abstract text available
Text: S I E M SIMOPAC E N S MOSFET Module BSM 121 AR C VDS = 200 V /q =130 a ^DS(on) = 20 ItlO • • • • • • Power m odule Single switch N channel Enhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig . 1 a 1) Type Ordering code
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Untitled
Abstract: No abstract text available
Text: Advanced Data Low VCE sat| IGBT with Diode IXSA 12N60AU1 VCES I v C25 CE(sat 600 V 12 A 2.5 V Short Circuit SO A Capability Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 Maximum Ratings vt c g r T, = 25°C to 150°C; RQE = 1 MS2 600 V v Continuous
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12N60AU1
O-263AA
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Untitled
Abstract: No abstract text available
Text: Ç IEM FM S SIMOPAC MOSFET Module BSM 691 F Vds = 1000 V = 6 x 4.8 A ^DS on = 2.5 ß lD • • • • • • • Power module 3-phase full-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 3 a 1)
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C67076-A1502-A2
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