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    DIODE ZD 12 Search Results

    DIODE ZD 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ZD 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code diode 04

    Abstract: Low Forward Voltage Diode marking code MS SOT Reverse voltage diode Schottky diode low voltage schottky marking code PD sot-23 marking code 1SS392
    Text: 1SS392 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZD" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original     		PDF 1SS392 OT-23 marking code diode 04 Low Forward Voltage Diode marking code MS SOT Reverse voltage diode Schottky diode low voltage schottky marking code PD sot-23 marking code 1SS392

    J555

    Abstract: J554 J553 J556 diode j555 DIODE DATABOOK J557 nj16 current regulator diode j555 diode
    Text: Databook.fxp 1/19/99 12:10 PM Page C-6 C-6 01/99 J553, J554, J555, J556, J557 Current Regulator Diode Absolute maximum ratings at TA = 25¡C. ¥ Current Regulation ¥ Current Limiting ¥ Biasing Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation


    Original     		PDF

    UZD225

    Abstract: for triangulation sensor zener diode 531 1969inch capacitive level sensor circuit drawing M1021 UZD821 UZD822 UZD823 UZD824
    Text: UZD22,225 series 0.6.10 12:08 Page 1 DIE-CAST HOUSING TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS UZD22 UZD225 HIGH IMMUNITY TO TARGET COLOR CHANGES WITH DIE-CAST BODY Not Affected Background Object The sensor does not detect background objects. It employs a triangulation


    Original     		PDF UZD22 UZD22 UZD225 UZD824 UZD825 UZD831 M416mm UZD225 for triangulation sensor zener diode 531 1969inch capacitive level sensor circuit drawing M1021 UZD821 UZD822 UZD823 UZD824

    sm25 diode

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 12 Jul, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M2698Z#250 to M2698Z#350 Old Type No.: SM25-36CXC964 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2500-3500


    Original     		PDF M2698Z SM25-36CXC964 sm25 diode

    M2698ZC

    Abstract: M2698Z M2698
    Text: WESTCODE An Date:- 12 Jul, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M2698Z#250 to M2698Z#350 Old Type No.: SM25-36CXC964 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2500-3500


    Original     		PDF M2698Z SM25-36CXC964 M2698ZC M2698

    equivalent transistor LM317T

    Abstract: schematic diagram lm317t 6v BATTERY CHARGING CIRCUIT lm317 IC LM317T lm317 equivalent data sheet ic lm317t cost of LM317t LM317T battery charger Regulated Power Supply Schematic Diagram lm317 LM317T
    Text: ICS1735EB ICS1735 Evaluation Board General Description Table 1 Cells 3 6 12 Galaxy Power, Inc.'s ICS1735 Evaluation Board helps provide a practical way of evaluating the ICS1735 conditioning/charge method on lead acid batteries. The evaluation board provides


    Original     		PDF ICS1735EB ICS1735 2N3903 047uF 100pF LM340 AN7805 equivalent transistor LM317T schematic diagram lm317t 6v BATTERY CHARGING CIRCUIT lm317 IC LM317T lm317 equivalent data sheet ic lm317t cost of LM317t LM317T battery charger Regulated Power Supply Schematic Diagram lm317 LM317T

    diode sy 715

    Abstract: No abstract text available
    Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F


    OCR Scan     		PDF cH7Q57Ã 001G35S diode sy 715

    DAF96

    Abstract: No abstract text available
    Text: M A ZD A b elvu Q ^p diode pentode Détecteur - Amplificateur A.P. C A R A C T E R IS T IQ U E S G E N E R A L E S Chauffage direct Alimentation du filament en série ou en parallèle Vf If Ampoule .


    OCR Scan     		PDF

    M74HCXXXX

    Abstract: 74HC40103
    Text: 5bE D r z j ^ 7 # » S • 712=1237 0 0 4 Q 4 6 0 QSb ■ S G T H S C S -T H O M S O N M 5 4 /7 4 H C 4 0 1 0 2 II8 S 0 iy ig iia a iB B E i M 5 4 /7 4 H C 4 0 1 0 3 G S-THOMSON T - cf S ’- 2 3- ¡Y 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS ■ HIGH SPEED


    OCR Scan     		PDF 40102B/40103B M54/74HC40102/40103 M54/74HC40102/40103 7TET237 M74HCXXXX 74HC40103

    VM716N8

    Abstract: No abstract text available
    Text: ^ ^ V T C In c. Value the CustomerTU FEATURES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 .2 -5 pH 0.5 pH typical - Write Current Range 5 - 35 mA - Low Input Capacitance = 12 pF typical


    OCR Scan     		PDF VM7160 65nV/VHz VM7162 VM7164 VM7168 100mV, 10MHz VM716N8

    Untitled

    Abstract: No abstract text available
    Text: WESTERN DIGITAL C O R P O R A T I O N WD1943 8136 Dual Baud Rate Clock XTAL/EXT 1 d + 5V ^ 18 17 16 ZD X TAL/EXT ZD TT ZD T a fR 3 r A 4 15 = 3 Tb r B 5 14 RC 6 13 r d CU 7 12 STR 8 NC 9 11 10 ZD TC ZD TO ZD STT ZD G ND ZD F/4 • OPERATES WITH CRYSTAL OSCILLATOR OR EX­


    OCR Scan     		PDF WD1943 BR1941

    Untitled

    Abstract: No abstract text available
    Text: A • R W .\A A P T 12 0 1 R 5 B V R dvanced pow er Te c h n o l o g y “ 1200V io a 1.500Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF O-247 APT1201R5BVR

    Untitled

    Abstract: No abstract text available
    Text: A • R W .\A A P T 12 0 1 R 6 B V R dvanced pow er Te c h n o l o g y “ 8a 1200V 1.600Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF O-247 APT1201R6BVR

    QM75DY-24

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75


    OCR Scan     		PDF QM75DY-24 E80276 E80271 QM75DY-24

    WT 7520

    Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
    Text: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature


    OCR Scan     		PDF T-Ol-01 -28-Unt-2A- 453/JJ5Ã 422M0 T0-94 h-755 WT 7520 diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper

    fuse BJE 147

    Abstract: fuse 9 BJE 147 SHINDENGEN TR 222 7431u ZD205 zd106 R-33 ZUP-400 mip0224 d1fl20u
    Text: ZUP-400 SERIES RELIABILITY DATA DWG: JA549-79-01 Q A APPD APPD PorôK' Ptlii. CHK O c ^ /a o /q ^ ^ A DWG ^ nJ n e m ic - l a m b d a l t d . <*• s<7. /& & & INDEX 1 .MTBF; Calculated Value of MTBF R-1 2.Component Derating R -2-12 3.Main Components Temperature Rise


    OCR Scan     		PDF ZUP-400 JA549-79-01 R-2-12 R-13-14 R-15-16 R-17-32 ZUP-400 RCR-9102) MIL-HDBK-217F. GENRAD-2503. fuse BJE 147 fuse 9 BJE 147 SHINDENGEN TR 222 7431u ZD205 zd106 R-33 mip0224 d1fl20u

    VM312

    Abstract: DIODE H5y VM312-8PMJ VM3128
    Text: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum


    OCR Scan     		PDF VM312 10-CHANNEL, 50V/V 200nH 32R512 34-lead VM3129PMJ 28-Lead VM3126SSJ 10-Channel VM312 DIODE H5y VM312-8PMJ VM3128

    zd2500

    Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
    Text: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS


    OCR Scan     		PDF T-Ol-01 1001b. 254-turns zd2500 WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070

    DIODE H5X

    Abstract: diode zd 33 DIODE H5y diode zd 12
    Text: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono­ lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current


    OCR Scan     		PDF 10-CHANNEL, 10-Channel 44-lead 36-lead 28-Lead DIODE H5X diode zd 33 DIODE H5y diode zd 12

    JEC 400

    Abstract: RBV800 RBV810 diode zd 18 diode zd 12
    Text: r svnSEMi ^ •w — m in c 5YMSEMI 5EMICOMDUCTOR RBV800 - RBV810 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts lo : 8.0 Amperes FEATURES: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    OCR Scan     		PDF RBV800 RBV810 UL94V-0 MIL-STD-202, JEC 400 diode zd 18 diode zd 12

    Untitled

    Abstract: No abstract text available
    Text: T ì M Ì mm:II m* Ä Q 91 SEMICONDUCTOR DS5001FP 128K Soft Microprocessor Chip FEATURES PIN ASSIGNMENT • 8051-compatible microprocessor adapts to its task - Accesses up to 128 kbytes of nonvolatile SRAM - In-system programming via on-chip serial port - Can modify its own program or data


    OCR Scan     		PDF DS5001FP 8051-compatible CRC-16

    diode zd 33

    Abstract: yy12
    Text: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum


    OCR Scan     		PDF 10-CHANNEL, 50V/V 200nH 10OmV, 10MHz 600nH, diode zd 33 yy12

    Untitled

    Abstract: No abstract text available
    Text: WÉÊ VTC Inc. Value the Customer VM7100 2, 4 O R 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/W RITE PR EA M PLIFIE R PRELIMINARY FEATURES D ESCRIPTIO N The VM7100 is a high-performance, very low-power read/ write preamplifier designed for use with external 2-terminal,


    OCR Scan     		PDF VM7100 VM7100 100mV, 10MHz

    TC74HC40102

    Abstract: 74HC40103
    Text: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC401Q3P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER_ The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		PDF TC74HC40102P TC74HC40103P TC74HC401Q3P TC74HC40102 TC74HC40103 40102/40103B) 74HC40103 TC74HC40102P