1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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smd zener diode code DE
Abstract: Zener diode smd marking 22 zener smd marking de Zener diode smd marking code w1 D31 SMD MARKING axial zener diodes marking code c3v6 D31 SMD CODE BZD84C51
Text: Formosa MS SMD Zener Diode BZD84 SERIES List List. 1 Package outline. 2 Features. 2
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BZD84
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
smd zener diode code DE
Zener diode smd marking 22
zener smd marking de
Zener diode smd marking code w1
D31 SMD MARKING
axial zener diodes marking code c3v6
D31 SMD CODE
BZD84C51
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marking KDL
Abstract: KDS DATE CODE KDK SOT-23 zener sot-23 marking 330 smd code marking c43 sot23 kds 0037 sot23 zenner 5.6 volts zener diode specifications
Text: Formosa MS SMD Zener Diode BZD84 SERIES List List. 1 Package outline. 2 Features. 2
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BZD84
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
marking KDL
KDS DATE CODE
KDK SOT-23
zener sot-23 marking 330
smd code marking c43 sot23
kds 0037
sot23 zenner
5.6 volts zener diode specifications
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Untitled
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT SERIES 2-Phase Half-Wave Pre Driver for Fan Motor TYPE ＢＤ６７１２ＡＦ FEATURES Built - in zenner diode for Vcc clamp 〇ABSOLUTE MAXIMUM RATINGS Symbol Limit Unit Pd 780＊ mW Operating temperature
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24mW/.
R1120A
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015AZ3.3
Abstract: Zenner 12V 015AZ12 015AZ12-X 015AZ2
Text: 015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm Small package Nominal voltage tolerance about ±2.5% 2.0V~12V Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
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015AZ2
015AZ12
015AZ3.3
Zenner 12V
015AZ12
015AZ12-X
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Untitled
Abstract: No abstract text available
Text: 02DZ100 TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ100 Constant-Voltage Regulation Applications Reference Voltage Applications Unit: mm z Small package Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Power dissipation P* 200 mW
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02DZ100
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Untitled
Abstract: No abstract text available
Text: 02DZ100 TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ100 Constant-Voltage Regulation Applications Reference Voltage Applications Unit: mm z Small package Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 200 mW
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02DZ100
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CRY62
Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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CRY62
CRZ47
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ47
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CRY62
Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Unit: mm Measurement Equipment Constant Voltage Regulation Transient Suppressors z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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CRY62
CRZ47
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ47
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zenner
Abstract: 015AZ12-X 015AZ2 015AZ24 015AZ16 702z diode 639 015AZ15
Text: 015AZ2.0~015AZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ24 Constant-Voltage Regulation Applications Unit: mm Small package Nominal voltage tolerance of about ±2.5% 2.0 V~24 V Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit
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015AZ2
015AZ24
zenner
015AZ12-X
015AZ24
015AZ16
702z
diode 639
015AZ15
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zenner
Abstract: CRY62 CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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CRY62
CRZ47
zenner
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
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a39 zener diode
Abstract: No abstract text available
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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CRY62
CRZ47
a39 zener diode
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015AZ12-X
Abstract: 015AZ2 015AZ24 MG zenner
Text: 015AZ2.0~015AZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ24 Constant-Voltage Regulation Applications Unit: mm z Small package z Nominal voltage tolerance of about ±2.5% 2.0 V~24 V Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol
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015AZ2
015AZ24
015AZ12-X
015AZ24
MG zenner
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015AZ12-X
Abstract: 015AZ2 015AZ24 015az15
Text: 015AZ2.0~015AZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ24 Constant-Voltage Regulation Applications Unit: mm z Small package z Nominal voltage tolerance of about ±2.5% 2.0 V~24 V Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol
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015AZ2
015AZ24
015AZ12-X
015AZ24
015az15
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CRY62
Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Text: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Unit: mm 削除: Automation Measurement Equipment Constant Voltage Regulation Transient Suppressors z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V
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CRY62
CRZ47
CRY68
CRY75
CRY82
CRY91
CRZ10
CRZ11
CRZ12
CRZ13
CRZ47
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Untitled
Abstract: No abstract text available
Text: 1/3 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT SERIES 2-Phase Half-Wave Motor Driver for Fan Motor TYPE ＢＤ６７０１Ｆ FEATURES Built - in reverse current protection diode 〇ABSOLUTE MAXIMUM RATINGS Parameter Supply voltage Symbol Limit
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24mW/.
R1120A
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02DZ2
Abstract: 02DZ24 02DZ24-X
Text: 02DZ2.0~02DZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ2.0~02DZ24 Constant Voltage Regulation Applications Reference Voltage Applications Unit: mm z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
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02DZ2
02DZ24
02DZ24
02DZ24-X
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02DZ2
Abstract: 02DZ24 02DZ24-X
Text: 02DZ2.0~02DZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ2.0~02DZ24 Constant Voltage Regulation Applications Reference Voltage Applications Unit: mm z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
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02DZ2
02DZ24
02DZ24
02DZ24-X
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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1823-01R
Abstract: 2SK1823-01R T151 FA-MT A2260
Text: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode
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2SK1823-01R
1823-01R
2SK1823-01R
T151
FA-MT
A2260
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FA 23 zenner
Abstract: A2466 DO810 2SK2259-01MR K2259 bojk
Text: 2SK2259-01MR FUJI PO W ER M O S-F ET N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings I Features »High current »Low on-resistance »Mo secondary breakdown »Low driving power 1h igh forward Transconductance 'Avalanche-proof 'Including G-S Zenner diode
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2SK2259-01
FA 23 zenner
A2466
DO810
2SK2259-01MR
K2259
bojk
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K2259
Abstract: 2SK2259-01M 2SK2259-01MR T151 FA 23 zenner A2466
Text: 2SK2259-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • h igh forward Transconductance • Avalanche-proof • Including G-S Zenner diode
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2SK2259-01MR
SC-67
ilif1115
891-gMSB
K2259
2SK2259-01M
2SK2259-01MR
T151
FA 23 zenner
A2466
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H150
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IHA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Lovv driving power • High forward Transconductance • Avc lanche-proof • Including G-S Zenner diode
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OCR Scan
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PDF
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2SK1822-01
SC-67
H150
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sj 2258
Abstract: No abstract text available
Text: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance • A ve lanche-proof • Including G-S Zenner diode
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OCR Scan
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2SK1822-01
sj 2258
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