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    DIODES 1N 4148 Search Results

    DIODES 1N 4148 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODES 1N 4148 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4148

    Abstract: 4148
    Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca.


    Original     		PDF DO-35 OD-27 150/C) 1N4148 4148

    Untitled

    Abstract: No abstract text available
    Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.


    Original     		PDF DO-35 OD-27 150/C)

    1N914 CJ 4148

    Abstract: No abstract text available
    Text: 1N914 THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage


    Original     		PDF 1N914 DO-34 DO-35 MIL-STD-202E, SbA766gDrSbA8 1N914 CJ 4148

    diode t 4148

    Abstract: 4148 T 4148 diode 4148 diode IN 4148 1N4148 IN 4148 diode t 4148 diode 4148 diode 4151
    Text: Diotec 1N 4148, 1N 4150, 1N 4151, 1N 4448, Small Signal Si-Diodes Si-Allzweck-Dioden Nominal current Nennstrom Ø 1.9 150 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V max Glass case Glasgehäuse DO-35 SOD-27 Ø 0.56 max Dimensions / Maße in mm


    Original     		PDF DO-35 OD-27 diode t 4148 4148 T 4148 diode 4148 diode IN 4148 1N4148 IN 4148 diode t 4148 diode 4148 diode 4151

    1N4150

    Abstract: 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4148 1N4154 1N4448
    Text: 1N914 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency


    Original     		PDF 1N914 DO-34 DO-35 MIL-STD-202E, SbA766gDrSbA8 1N4150 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4148 1N4154 1N4448

    diode t 4148

    Abstract: t 4148 diode din 4148 diode din 4148 IN4448 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t
    Text: «m » 'W 1N 4148 O • 1N 4149 -1N 4446 0 1N 4447 • 1N 4448 O • 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden:


    OCR Scan     		PDF -1N4446 1N914A IN4446 1N914B IN4448 diode t 4148 t 4148 diode din 4148 diode din 4148 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t

    1N4140

    Abstract: 1N4305 diode in 4148 diode 1N4151
    Text: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I


    OCR Scan     		PDF 1N4148 1N4140 1N4150 1N4151 1N4152 1N4153 1N4154 1N4305 1N4446 1N4447 diode in 4148 diode 1N4151

    MTZJ 188

    Abstract: 1ss376
    Text: Product List Diodes Product List 1N 4004A . 135 DAN235E . 71 1N4148 . 56


    OCR Scan     		PDF 1N4148 1N4150 1N4448 1N5200B 1SR124-400A 1SR13 UMN11N UMP11N UMZ12N MTZJ 188 1ss376

    in4447

    Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4447 IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148

    DIODe IN4446

    Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 DIODe IN4446 in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX

    Diodes 1n 4148

    Abstract: No abstract text available
    Text: VfSMAY _ 1N4148.1N4448 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N 4148 - 1 N 914 1N4448 - 1 N914B Applications 94 9367 Extrem e fa st sw itches Absolute Maximum Ratings Tj = 2 5 °C


    OCR Scan     		PDF 1N4148 1N4448 1N4448 N914B D-74025 01-Apr-99 Diodes 1n 4148

    In5062

    Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
    Text: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149


    OCR Scan     		PDF DO-35) 1N4152 1N4150 DLN914, DLN916, DLN4149 DLN4446 DLN4447 DLN4448 In5062 in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode

    diode t 4148

    Abstract: diode f 4148 T 4148 t 4148 diode diode 4448 4148 t 4448 4148 Diode 4148 MINIMELF 4148 diode
    Text: E G CORP 17E D 005^42^ QD0Tflb7 3 • LL 4148 •LL 4448 TllLIlIFBÎIîSKlKl electronic Creative Tecfinolog es T~ 01-01 Silicon Epitaxial Planar Diodes A p p lications: Extreme fast switches Features: • Electrical data identical with the devices 1N 4 1 4 8 respectively 1N 4 4 4 8


    OCR Scan     		PDF mmx50 diode t 4148 diode f 4148 T 4148 t 4148 diode diode 4448 4148 t 4448 4148 Diode 4148 MINIMELF 4148 diode

    1n4148 D035

    Abstract: DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00


    OCR Scan     		PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 1n4148 D035 DHD806 DHD800 1N916 JANTX JANTX 1N916 1N4532 DE104 DZ805 IN4305 1N4148

    41481

    Abstract: No abstract text available
    Text: JA N 1N 4148-1 Microsemi Corp. óioCe exoerts ' SC O TTSD A LE, A Z SANTA A N A , CA For more information call: 602 941-6300 FEATURES • MICROMINIATURE PACKAGE MILITARY SWITCHING DIODES • TRIPLE LAYER PASSIVATION • HERMETICALLY SEALED GLASS PACKAGE


    OCR Scan     		PDF MIL-S-19500/116 100mA 457U55S DO-35) 41481

    1n914 equivalent

    Abstract: 1N3067 1N5318 1N4009 equivalent 1N5319 1N814 FD6666 1n903 1n904 1N4950
    Text: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE Continued *RR Bv ns VOLTS MAX 1N4150 C Package pF Equivalent nA •r @ Vr VOLTS @ If M IN MAX @ VOLTS MAX @ mA MAX Package D O -7/D O -35 4.0 75 100 @ 50 1.0 @ 200 2.5 DO-35 1N 3600 1N4305 4.0 75 100


    OCR Scan     		PDF 1N4150 1N4305 1N4322 1N907 1N908A 1N905 1N906 1N4009 1N4154 1N906A 1n914 equivalent 1N3067 1N5318 1N4009 equivalent 1N5319 1N814 FD6666 1n903 1n904 1N4950

    1N SERIES DIODE

    Abstract: 2001fx
    Text: Diodes I High-Speed Switching Diode 1 1N4148/1N4150/1N4448/1N914B ►External dimensions Units: mm •J E D E C Standard Product At ROHM, we manufacture the following 1N series, as a JEDEC standard product, to assure that we meet the needs of our overseas customers as well.


    OCR Scan     		PDF 1N4148/1N4150/1N4448/1N914B 22Min. DO-35 SC-40 1N4148 1N4150 1N4448 100mA 200mA 1N SERIES DIODE 2001fx

    1N4448R

    Abstract: No abstract text available
    Text: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table


    OCR Scan     		PDF 1N4148 1N914 1N4150 1N4153 1N4448 1N4606 DO-35 1N4148R 1N4448R

    Untitled

    Abstract: No abstract text available
    Text: JA N 1N 4148-1 ☆ JA T Ñ K ? Microísemi Corp. $ The û'Ode e xp ert? SANTA A N A , CA SCOTTSDALE, A 2 F o r m o re in fo rm a tio n call: 714 979-8220 MILITARY SWITCHING DIODES FEA TU RES • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY BONDED


    OCR Scan     		PDF MIL-S-19 I-51J 100mA

    5011N

    Abstract: IC la 4148 1N44 wm9 05
    Text: TY P ES IN 4148 WM9 1N4446 THRU 1N4449 SILICON SWITCHING DIODES B U L L E T IN N O . D L S 7 3 9 2 6 9 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 197 3 FA ST SWITCHING DIODES Rugged Double-Plug Construction • Electrical Equivalents: 1N4148 . . . 1N914 . . . 1N4531


    OCR Scan     		PDF 1N4446 1N4449 1N4148 1N914 1N4531 1N4149 1N916 1N4446 1N914A 1N4447 5011N IC la 4148 1N44 wm9 05

    T 4148

    Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
    Text: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •


    OCR Scan     		PDF 002T42b N4148 DIN41 -T-03 2c142b T 4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288

    D4148

    Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
    Text: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_


    OCR Scan     		PDF D4148 D36/50 D36/100 D36/200 D36/400 D36/600 D36/800 D36/1000 OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode

    4148 diod

    Abstract: telefunken diodes 914 Diode N4148 diode din 4148 on l 4148 details t 4148 diode IN4149 1N4446 telefunken N4149 diod 4148
    Text: 17E » TELEFUNKEN ELECTRONIC ô^ocnb o o o 'j f l ô 'î •= • AL 66 1 N4148 I N 4149 1 N 4446 1 N 4447 1 N 4448 1 N 4449 TnHLKFMIMlIK] electronic Creative Technologies - T '0 3 - 0 ? Silicon Epitaxial Planar Diodes A p p lications: Extreme fast switches


    OCR Scan     		PDF N4148 4148 diod telefunken diodes 914 Diode N4148 diode din 4148 on l 4148 details t 4148 diode IN4149 1N4446 telefunken N4149 diod 4148

    4446

    Abstract: diode 4148
    Text: A C T IV E C O M P O N EN TS F O R H Y B R ID C IR C U IT S C O M PO SAN TS A C T IF S P O U R C IR C U IT S H Y B R ID E S Silicon signal diodes, general purpose chips Diodes de signa! au silicium, usage généra! (pastilles) Type Type VR (V) 'f (mA) 'fm


    OCR Scan     		PDF