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    DIODES IN4148 Search Results

    DIODES IN4148 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODES IN4148 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1n914 equivalent

    Abstract: d1914 IN414B test diode in4148 DIODE BP M 3101 1N914 1N914-B 1N914-HV 1N914-N
    Text: This DIODES COMPLEMENTARY SWITCHING DIODES 1N914-R* 60 Its 1N914-RN 60 1N914-HV 200 1N914-B 75 0.025 @ 20V 0.001 @ 20V 0.025 @ 20V 0.001 @ 20V 0.001 @ 20V 0.25 @ 20V 1.0 @ 75V 5.0 @ 60V V BR Volts Min @IR = 10/iA Cr pf Max. @ ov trr Max. in N-Sec @ lF=10mA; recover


    OCR Scan     		1N914 in4148 1N914-N 1N914-R* 1N914-RN 1N914-HV 1N914-B DF100 100/iA 10/iA 1n914 equivalent d1914 IN414B test diode in4148 DIODE BP M 3101 1N914 1N914-B 1N914-HV 1N914-N PDF

    1SV205

    Abstract: marking W1S sot23 RB110c IN4148 anode cathode DAN202krva marking RA4 sot23 DAN217 DAN404KRVA w1s sot23 1SV207
    Text: ROHM BSE CORP 7 Ö S a ci ‘n D ▼ A * * DGG3G31 S ' » • V a ^ ì v * « jfc v Ä . . -II-Z 5 Variable Capacitance Diodes I Variable Capacitance Diodes Electrical Characteristics Ja= 25?Cfc Absolute Maximum Ratings (là =25°Ci Type Vrm VR Tstg TÍ ÍR(|iA Max<


    OCR Scan     		DGG3G31 1SV205 1SV207 OT-23 OT-89 Maximu5-85 DAN202KRVA DAP202KRVA DAP202KRVA DAN217 marking W1S sot23 RB110c IN4148 anode cathode marking RA4 sot23 DAN404KRVA w1s sot23 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    in4148WS

    Abstract: in4148w 1n4148ws IN4148
    Text: BAV16WS/IN4148WS FAST SWITCHING DIODES SOD-323 FEATURES 1.35 0.053 1.26(.050) 1.15(0.045) 1.24(.048) 2.70(0.106) 2.70(0.106) 1.80(0.071) 2.30(0.091) 2.30(0.091) 1.60(0.063) Fast switching speed Surface mount package ideally suited for automatic insertion


    Original     		BAV16WS/IN4148WS OD-323 MIL-STD-750, 150mA BAV16WS/1N4148WS in4148WS in4148w 1n4148ws IN4148 PDF

    1n914 equivalent

    Abstract: 1N914 1n914 diode 1N914-B 1N914-HV 1N914-N 1N914-R 1N914-RN DE100 DF100
    Text: DIODES 100% Probe Tested to These Parameters @ 25° C CO M PLEM ENTARY SWITCHING DIODES X / te s te d o n \ \ s a m p le basis / 'AVAILABLE IN 16 PIN DIP ARRAYS VBr V o lts M in. @ I r= 100/ì A 1N914 Guaranteed Ir ;i A Max. @ V„ Volt» CT If m A Min. @ V f= 1 .0 V


    OCR Scan     		1N914 IN4148 1N914-N 1N914-R* 1N914-RN 1N914-HV 1N914-B DE100 DF100 914-1B 1n914 equivalent 1N914 1n914 diode 1N914-B 1N914-HV 1N914-N 1N914-R 1N914-RN DF100 PDF

    RB110C

    Abstract: diode 1436 DAN202KRVA c1251
    Text: RO H M CORP 07E D | T f i S ñ ' m O D D E S T % ' 4 | tk Variable Capacitance Diodes EVariable Capacitance Diodes Electrical Characteristics Ta=25°C fi I Î I =25ÙC) Vr m VR Tj Tstg (V) (V) t°C) i°C) 1SV205 35 30 120 —3 0-12 0 1SV207 35 30 120 -3 0 -1 2 0


    OCR Scan     		1SV205 1SV207 RB110C RB4000 DAN212K IN4148 OT-25 DAN404KRVA DAP404KRVA diode 1436 DAN202KRVA c1251 PDF

    SBS c11 battery

    Abstract: moltech NI2020 moltech NI2020 smart battery system LTC1760 li-ion battery charger schematic FDS6912A IN4148 LTC1694
    Text: LINEAR TECHNOLOGY MARCH 2005 COVER ARTICLE Smart Batteries: Not Just for Notebooks Anymore . 1 Mark Gurries Issue Highlights . 2 LTC in the News… . 2 DESIGN FEATURES Dual Monolithic Ideal Diodes


    Original     		170MHz OT-23 LTC4412. SBS c11 battery moltech NI2020 moltech NI2020 smart battery system LTC1760 li-ion battery charger schematic FDS6912A IN4148 LTC1694 PDF

    LT1968

    Abstract: Sine Wave Generation Techniques schematic diagram 48V automatic battery charger circuit diagram for 48v 10a automatic battery charger SOT-23 MOSFET P-CHANNEL a1 1- mark 12V, 20A automatic charger schematic schematic diagram 48v dc 3A battery charger 10K115 LTC6905 48v battery charger schematic diagram
    Text: LINEAR TECHNOLOGY MARCH 2005 COVER ARTICLE Smart Batteries: Not Just for Notebooks Anymore . 1 Mark Gurries Issue Highlights . 2 LTC in the News… . 2 DESIGN FEATURES Dual Monolithic Ideal Diodes


    Original     		170MHz OT-23 I-20156 SE-164 LT1968 Sine Wave Generation Techniques schematic diagram 48V automatic battery charger circuit diagram for 48v 10a automatic battery charger SOT-23 MOSFET P-CHANNEL a1 1- mark 12V, 20A automatic charger schematic schematic diagram 48v dc 3A battery charger 10K115 LTC6905 48v battery charger schematic diagram PDF

    IN4149

    Abstract: 1N4149 ic 1N4148 diodes IN4148 1N4148 IN4148 DO-35 716-0422
    Text: IN4148, IN4149 • G EN ERA D E S C R IP T IO N O U T L IN E D R A W IN G The fam ily of 1N4148, 1N4149 are the silicon epitaxial planar diodes that provide low capacitance, high conductance, and fast reverse recovery. W ith these features, the devices are


    OCR Scan     		IN4148, IN4149 1N4148, 1N4149 DO-35 188/TELEX 1N4148 1N4149 IN4149 ic 1N4148 diodes IN4148 1N4148 IN4148 DO-35 716-0422 PDF

    IN4149

    Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
    Text: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.


    OCR Scan     		CV8790 IS922 DO-35 CV9637 IN4448 DS59-61/03/302 BAY71 DS59-61/03/303 IN4149 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 PDF

    TK75020

    Abstract: toshiba laptop schematic diagram tokoam variable coils HIGH POWER MOSFET TOSHIBA D22 diode marking code 6pin sot-89 marking d9 itt 2907A laptop CCFL inverter SCHEMATIC laptop inverter ccfl tk11650
    Text: Toko IC Products Selection Guides: • • • • • • • • • • Linear Regulators DC-DC Converters Switching Power Supply ICs Temperature Sensors Solid State Switches Variable Capacitance Diodes Application Notes Resistor Calculation Tool Product Selection Tree


    Original     		TK112xxBM OT-23L TK112xxBU OT-89-5 TK113xxBM TK113xxBU OT-89ado 1-800-PIK-TOKO 1-800-DIGIKEY TK75020 toshiba laptop schematic diagram tokoam variable coils HIGH POWER MOSFET TOSHIBA D22 diode marking code 6pin sot-89 marking d9 itt 2907A laptop CCFL inverter SCHEMATIC laptop inverter ccfl tk11650 PDF

    IN4148

    Abstract: 270 r 1 w resistor
    Text: Light-Em itting Diodes LED o Gallium phosphide and gallium arsenide phosphide visible sources for use where long life and mechanical robustness are required. Must be used with an external series resistor or driven from a constant current source. For most applications


    OCR Scan     		IN4-148 IN4148 270 r 1 w resistor PDF

    266CT125-3E2A

    Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
    Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A PDF

    GBAN-PVI-1

    Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
    Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit


    Original     		AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary PDF

    1N4148

    Abstract: IN4148W 1N4148 sod123 DIODE 1N4148 package SO thermal diode 1n4148 1n4148 mark 1N4148W 1R SOD-123 DIODE 1N4148 characteristics 1N4148 Fast Switching Diode
    Text: 1N4148, 1N4148W Silicon Epitaxial Planar Diode fast switching diodes. Packages -D O -3 5 1N4148 - SO D -123 ( IN 4 148W) -Cathode Mark DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm in 1 J 1 min.0.25 3 SOD-123 Plastic Package Weight approx. 0.01 g


    OCR Scan     		1N4148, 1N4148W 1N4148) DO-35 OD-123 150ll2) 1N4148 IN4148W 1N4148W 1N4148 sod123 DIODE 1N4148 package SO thermal diode 1n4148 1n4148 mark 1R SOD-123 DIODE 1N4148 characteristics 1N4148 Fast Switching Diode PDF

    CV9637

    Abstract: cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 cv8790 CV7040 CV7875 IN4149
    Text: Approved Products Small Signal Diodes Case Outlines Dimensions are in mm Case outline 1-90 - d ia1 65 -25*4 m inCathode end is denoted by broad colour band Commercial Equivalent Outline Rated VR Rated IF mA V F @ IF V mA DO-35 DO-35 DO-35 DO-35 DO-35 DO-35


    OCR Scan     		DO-35 BS9300 IN914 DO-35 CV8790 IS922 CV9637 IN4448 cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 CV7040 CV7875 IN4149 PDF

    Untitled

    Abstract: No abstract text available
    Text: D atash eet 500 mW EPITAXIAL PLAN AR DIODES Semiconductor M echanical Dim ensions JEDEC DO-35 . t .0 6 0 1 .0 90 Ip 1 .1 2 0 , 1 .0 0 h D . , 1 1 t .0 24 typ. Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0


    OCR Scan     		DO-35 IN4148 51X25X30cm 21X21X5 47X22X27cm PDF

    CV7040

    Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
    Text: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7


    OCR Scan     		1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 DO-35 CV7040 cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE PDF

    1n914 equivalent

    Abstract: diode RU 3B 1N914 1N914-B 1N914-HV 1N914-N 1N914-R 1N914-RN DF100
    Text: DIODES • A V A IL A B L E IN 16 PIN D IP A R R A Y S 1N 914-R N 1N 91 4-H V 1N 9 1 4 -B DE 100 DF100 @ Vf=1.0V 5.0 <2 75V 0.025 @ 20V 10 1.0 i 10 10 100 75V 0.001 @ 20V 60 5.0 H 50V 0.025 @ 20V 60 1.0 (i 0.001 200 1.0 H 75V 0.001 @ 20V 10 10 75 5.0 ü


    OCR Scan     		1N914 in4148 1N914-N 1N914-R* 1N914-RN 1N914-HV 1N914-B DF100 10/iA 10niA 1n914 equivalent diode RU 3B 1N914 1N914-B 1N914-HV 1N914-N 1N914-R 1N914-RN DF100 PDF

    AP5100

    Abstract: AP5100WG-7 AP-5100 1N5819HW-7 B230A BAT54 IN4148 SOT26 PWM
    Text: AP5100 1.2A Step-Down Converter with 1.4MHz Switching Frequency General Description Features • • • • • • • • • • • • The AP5100 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power


    Original     		AP5100 AP5100 DS32130 AP5100WG-7 AP-5100 1N5819HW-7 B230A BAT54 IN4148 SOT26 PWM PDF

    Untitled

    Abstract: No abstract text available
    Text: AP5101 1.5A Step-Down Converter with 1.4MHz Switching Frequency Pin Assignments Description The AP5101 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View SW N EW PRODU CT With the low series resistance power switch it enables a


    Original     		AP5101 AP5101 DS32258 PDF

    A921CY-4R7M

    Abstract: B340A BAT54 IN4148
    Text: AP5101 1.5A Step-Down Converter with 1.4MHz Switching Frequency Description Pin Assignments The AP5101 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View SW NEW PRODUCT With the low series resistance power switch it enables a


    Original     		AP5101 AP5101 DS32258 A921CY-4R7M B340A BAT54 IN4148 PDF

    AP5100WG

    Abstract: AP5100WG-7 IN414 0810V AP5100
    Text: AP5100 1.2A Step-Down Converter with 1.4MHz Switching Frequency Description Pin Assignments The AP5100 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View With the low series resistance power switch it enables a


    Original     		AP5100 AP5100 DS32130 621-AP5100WG-7 AP5100WG-7 AP5100WG AP5100WG-7 IN414 0810V PDF

    AP5100

    Abstract: AP-5100 AP5100WG
    Text: AP5100 1.2A STEP-DOWN CONVERTER with 1.4MHz SWITCHING FREQUENCY Description Pin Assignments The AP5100 is a current mode step-down converter with a built-in power MOSFET to enable smallest solution size power conversion. Top View With the low series resistance power switch it enables a


    Original     		AP5100 AP5100 DS32130 AP-5100 AP5100WG PDF