CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
|
Original
|
5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
|
PDF
|
ys250
Abstract: YS 150 003 YS23 YS250106-XX Ys06 YS250105 YSD3-03 abb drives YS230 abb ys 110
Text: A B B DRI VES 5ME ABB Drives :— - 7— -• • DIODES DIODEN DIODES Type Typ Type T> m DDl bf l SS - . . - Fast switching diodea - Schnelfe Dioden - Diodes rapides 9 . -• fl • r'T m- 0 3 - ¿ 1 3 • .
|
OCR Scan
|
YSD3-41
230104-XX
YSD3-03
YS230103-XX
YSD6-41
YS250105-XX
YSD15-41
ys250
YS 150 003
YS23
YS250106-XX
Ys06
YS250105
abb drives
YS230
abb ys 110
|
PDF
|
RLD78PP10
Abstract: RLD-78PP10 RLD78PA ROHM RLD78PA RLD78PAT1 83P3 MV13 RLD-78PA4 RLD78MP RLD-78PV
Text: Laser Diodes RLD-series laser diodes developed and manufactured by Conventional A ROHM RLD-78 series ROHM have a striking feature: a very small optical and electrical characteristic dispersion, which has been reduced to a third that of conventional equivalents, as illustrated on the
|
OCR Scan
|
RLD-78
mv131t
RLD78PP10
RLD-78PP10
RLD78PA
ROHM RLD78PA
RLD78PAT1
83P3
MV13
RLD-78PA4
RLD78MP
RLD-78PV
|
PDF
|
83P3
Abstract: 850 nm 1,5mW IR LASER
Text: Laser Diodes RLD-series laser diodes developed and m anufactured by Convwtontl A ROHM RLD-78 sari« ROHM have a striking feature: a very small optical and electrical characteristic dispersion, which has been reduced to a third that of conventional equivalents, as illustrated on the
|
OCR Scan
|
RLD-78
83P3
850 nm 1,5mW IR LASER
|
PDF
|
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
Original
|
element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
|
PDF
|
K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
|
OCR Scan
|
SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SMD LED LTW-X45T-PH 1. Description The LTW LiteOn White LED is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting. It gives you total design freedom and
|
Original
|
LTW-X45T-PH
35/40/20mA
BNS-OD-FC002/A4
|
PDF
|
led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
|
OCR Scan
|
10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
|
PDF
|
syntron rectifier
Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES
|
Original
|
|
PDF
|
RLD-78PP10
Abstract: RLD78PP10 IC 785 Laser Diode for cd rw RLD-78MAT2
Text: Laser Diodes R L D -s e r ie s la s e r d io d e s d e v e lo p e d a n d m a n u fa c tu r e d by R O H M h a ve a striking fe a tu re : a very sm all op tical an d e lectrical ch ara c te ris tic dispersion, w h ic h has be en redu ced to a third th a t o f c o n v e n tio n a l e q u iv a le n ts , a s illustrated on th e
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits V BR DSS • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling
|
Original
|
DMP3035SFG
AEC-Q101
DS35440
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling
|
Original
|
DMP3035SFG
AEC-Q101
DS35440
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling
|
Original
|
DMP3035SFG
AEC-Q101
DS35440
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
|
Original
|
DPLS350E
OT-223
J-STD-020D
MIL-STD-202,
DS31230
|
PDF
|
|
|
FOREIGN POLICY
Abstract: DPLS350E J-STD-020D
Text: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
|
Original
|
DPLS350E
OT-223
J-STD-020D
MIL-STD-202,
DS31230
FOREIGN POLICY
DPLS350E
J-STD-020D
|
PDF
|
Marking P35
Abstract: transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35
Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V IC = -3A High Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM up to -5A Peak Pulse Current
|
Original
|
DPLS350Y
-180mV
AEC-Q101
J-STD-020
MIL-STD-202,
DS31149
Marking P35
transistor p35
Marking P35 sot89
SOT89 transistor marking 5A
DPLS350Y
Diodes P35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V IC = -3A High Continuous Collector Current ICM up to -5A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A
|
Original
|
DPLS350Y
-180mV
AEC-Q101
J-STD-020
DS31149
|
PDF
|
P35 marking code transistor
Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
Text: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)
|
Original
|
DPLS350Y
-100mA
AEC-Q101
J-STD-020
MILSTD-202,
DPLS350Y-13
DS31149
P35 marking code transistor
4600 8 pin ic
Marking P35 sot89
marking p35
|
PDF
|
P35 marking code transistor
Abstract: Marking P35 sot89 transistor p35 DPLS350Y p35 marking
Text: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
|
Original
|
DPLS350Y
OT89-3L
J-STD-020C
MIL-STD-202,
DS31149
P35 marking code transistor
Marking P35 sot89
transistor p35
DPLS350Y
p35 marking
|
PDF
|
P35 marking code transistor
Abstract: DPLS350E
Text: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
|
Original
|
DPLS350E
OT-223
J-STD-020C
MIL-STD-202,
DS31230
P35 marking code transistor
DPLS350E
|
PDF
|
P35 marking code transistor
Abstract: marking code p35 transistor p35
Text: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
|
Original
|
DPLS350E
OT-223
OT-223
J-STD-020C
MIL-STD-202,
DS31230
P35 marking code transistor
marking code p35
transistor p35
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
|
Original
|
DPLS350Y
OT89-3L
J-STD-020C
MIL-STD-202,
DS31149
|
PDF
|
marking 3a SOT89
Abstract: No abstract text available
Text: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)
|
Original
|
DPLS350Y
OT89-3L
J-STD-020C
MIL-STD-202,
DS31149
marking 3a SOT89
|
PDF
|
BERULUB FR 16 B
Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power
|
Original
|
IXBH40N160,
BERULUB FR 16 B
circuit diagram of 5kw smps full bridge
thyristor aeg
UC3854 5kw
harmer simmons
BERULUB FR 16
Grease Berulub FR 16
Berulub FR 66
5kw smps pfc
ups PURE SINE WAVE schematic diagram
|
PDF
|
