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    DISCRETE MV1_BUILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

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    led smd 3028

    Abstract: INVENTEC BCM5906M inventec dosxx Socket AM2 smd led 5050 rgb u9024 ICS_ICS9LPRS355BGLFT R9225 BCM5906
    Text: DosXX Dunkel 1.0 MV1_BUILD 2007.02.28 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DD1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A02 60 TABLE OF CONTENTS


    Original     		PDF 60DGND FM111 U9031 60GND C9173 L2019 CN5021 020173MR004S590ZR U9033 TPS2065DGN led smd 3028 INVENTEC BCM5906M inventec dosxx Socket AM2 smd led 5050 rgb u9024 ICS_ICS9LPRS355BGLFT R9225 BCM5906