YM7121B
Abstract: IC401 YM7121 "laser picK up" EIAJ standards Svc 33 1-14
Text: Description of Major LSIs • YM7121 B IC401 1. Outline YM7121 is a C-MOS LSI for signal processing and servo control (SVC) in a CD player. It is used for the demodulation of the EFM signal from the laser pick up , detection / correction of the error signal ,
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YM7121
IC401)
YM7121B
IC401
"laser picK up"
EIAJ standards
Svc 33 1-14
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78ball
Abstract: H5TQ1G63DFR FBGA DDR3
Text: APCPCWM_4828539:WP_0000005WP_000000 APCPCWM_4828539:WP_0000005WP_0000005 1Gb DDR3 SDRAM 1Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ1G83DFR-xxC H5TQ1G83DFR-xxI H5TQ1G63DFR-xxC H5TQ1G63DFR-xxI *Hynix Semiconductor reserves the right to change products or specifications without notice
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H5TQ1G83DFR-xxC
H5TQ1G83DFR-xxI
H5TQ1G63DFR-xxC
H5TQ1G63DFR-xxI
DDR3-800
DDR3-1600)
96Ball
78ball
H5TQ1G63DFR
FBGA DDR3
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MN103002
Abstract: No abstract text available
Text: The correction table in The Revised Edition of MN103002A LSI User's Manual From 3rd Edition 1st Printing to 5th Edition Errors Page - P.2 P.2 P.3 P.3 P.4 P.4 - - P.8 P.9 P.12 P.17 P.19 P.22 P.24 Corrections Page - (MN103002AYB (CSP) has been added to the products described in
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MN103002A
MN103002AYB
MN103002AYB
MN103002A.
imm32
imm32
MN103002
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Untitled
Abstract: No abstract text available
Text: HYMD2326468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance
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HYMD2326468-K/H/L
32Mx64
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Untitled
Abstract: No abstract text available
Text: HYMD116645A8-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A11, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance
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HYMD116645A8-K/H/L
16Mx64
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H5TQ2G43AFR
Abstract: No abstract text available
Text: APCPCWM_4828539:WP_0000005WP_000000 APCPCWM_4828539:WP_0000005WP_0000005 240pin DDR3 SDRAM Registered DIMM DDR3 SDRAM Registered DIMM Based on 2Gb A-die HMT325R7AFR8C HMT351R7AFR8C HMT351R7AFR4C HMT31GR7AFR8C HMT31GR7AFR4C HMT42GR7AMR4C *Hynix Semiconductor reserves the right to change products or specifications without notice.
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240pin
HMT325R7AFR8C
HMT351R7AFR8C
HMT351R7AFR4C
HMT31GR7AFR8C
HMT31GR7AFR4C
HMT42GR7AMR4C
2Gx72
HMT42GR7AMR4C
010mm
H5TQ2G43AFR
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1N5819
Abstract: RS-422A RS-449 SP502 RTS-54 SP526CF Analog 5.1 decoder IC
Text: SP502 Multi–Mode Serial Transceiver description 61 SD a 62 VCC 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 73 VCC 74 VCC 75 GND 76 NC 77 NC 78 DSR 79 RxT 80 CTS The SP502 is a highly integrated serial transceiver that allows software
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SP502
SP502
RS-232
RS-422A
RS-449,
RS-485,
EIA-530.
SP5301
SP5301CN
1N5819
RS-422A
RS-449
RTS-54
SP526CF
Analog 5.1 decoder IC
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DM 024
Abstract: DDR266 DDR333 DDR400 PC3200 W3EG264M64EFSU-D4
Text: White Electronic Designs W3EG264M64EFSU-D4 PRELIMINARY* 1GB – 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION Fast data transfer rate: PC-2100, PC-2700 and PC3200 Clock speeds of 133 MHz, 166 MHz and 200MHz Supports ECC error detection and correction
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W3EG264M64EFSU-D4
2x64Mx64
PC-2100,
PC-2700
PC3200
W3EG264M64EFSU
512Mb
64Mx8
200MHz
DM 024
DDR266
DDR333
DDR400
PC3200
W3EG264M64EFSU-D4
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K4J52324QE-BC12
Abstract: K4J52324QE-BC14 K4J52324QE-BJ1A k4j52324qe K4J52324QEBC14 DDR2 x32 K4J52324Q samsung K4 ddr BJ11 WL02
Text: 512M GDDR3 SDRAM K4J52324QE 512Mbit GDDR3 SDRAM Revision 1.2 May 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4J52324QE
512Mbit
K4J52324QE-BC12
K4J52324QE-BC14
K4J52324QE-BJ1A
k4j52324qe
K4J52324QEBC14
DDR2 x32
K4J52324Q
samsung K4 ddr
BJ11
WL02
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Untitled
Abstract: No abstract text available
Text: Low Cost, Triple Differential Drivers for Wideband Video AD8141/AD8142 The drivers have an internal common-mode feedback loop that provides output amplitude and phase matching, achieving −50 dB balance error at 50 MHz and thereby suppressing evenorder harmonics and minimizing radiated electromagnetic
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AD8141/AD8142
AD8142
CP-24-7)
AD8141ACPZ-R2
AD8141ACPZ-RL
AD8141ACPZ-R7
AD8142ACPZ-R2
AD8142ACPZ-RL
AD8142ACPZ-R7
AD8142-EVALZ
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WV3HG2256M72AER-D6 ADVANCED* 4GB – 2x256Mx72 DDR2 SDRAM RDIMM, w/PLL FEATURES DESCRIPTION 240-pin, dual in-line memory module DIMM Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4300 and PC2-3200 Support ECC error detection and correction
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WV3HG2256M72AER-D6
2x256Mx72
240-pin,
PC2-6400*
PC2-5300*
PC2-4300
PC2-3200
18-compatible)
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256Mx
Abstract: No abstract text available
Text: White Electronic Designs WV3HG2256M72AER-D6 ADVANCED* 4GB – 2x256Mx72 DDR2 SDRAM RDIMM, w/PLL FEATURES DESCRIPTION 240-pin, dual in-line memory module DIMM Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4300 and PC2-3200 Support ECC error detection and correction
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WV3HG2256M72AER-D6
2x256Mx72
240-pin,
PC2-6400*
PC2-5300*
PC2-4300
PC2-3200
18-compatible)
256Mx
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WV3HG22
Abstract: No abstract text available
Text: White Electronic Designs WV3HG2256M72AER-D6 ADVANCED* 4GB – 2x256Mx72 DDR2 SDRAM RDIMM, w/PLL FEATURES DESCRIPTION 240-pin, dual in-line memory module DIMM Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4300 and PC2-3200 Support ECC error detection and correction
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WV3HG2256M72AER-D6
2x256Mx72
240-pin,
PC2-6400*
PC2-5300*
PC2-4300
PC2-3200
18-compatible)
WV3HG22
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PDF
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K4J52324QE-BC12
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QE 512Mbit GDDR3 SDRAM Revision 1.1 January 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J52324QE
512Mbit
K4J52324QE-BC12
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K4J52324QE-BJ1A
Abstract: K4J52324QE-BC14
Text: 512M GDDR3 SDRAM K4J52324QE 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4J52324QE
512Mbit
K4J52324QE-BJ1A
K4J52324QE-BC14
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PDF
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DDR266
Abstract: DDR333 DDR400 PC3200
Text: White Electronic Designs W3EG264M72EFSUxxxD4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION Fast data transfer rate: PC-2100, PC-2700 and PC3200 Clock speeds of 133 MHz, 166 MHz and 200MHz Supports ECC error detection and correction
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W3EG264M72EFSUxxxD4
2x64Mx72
PC-2100,
PC-2700
PC3200
W3EG264M72EFSU
512Mb
64Mx8
200MHz
DDR266
DDR333
DDR400
PC3200
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AD7450A
Abstract: AD8031 AD8137 AD8137YR AD8137YR-REEL AD8137YR-REEL7 MS-012AA
Text: Low Cost 12-Bit Differential ADC Driver AD8137 FEATURES 12-bit ADC drivers Portable instrumentation Battery-powered applications Single-ended-to-differential converters Differential active filters Video amplifiers Level shifters GENERAL DESCRIPTON The AD8137 is a low cost differential driver with a rail-to-rail
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12-Bit
AD8137
12-bit
AD8137
differen62.
AD8137YR
AD8137YR-REEL
AD8137YR-REEL7
AD7450A
AD8031
AD8137YR
AD8137YR-REEL
AD8137YR-REEL7
MS-012AA
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AU6369
Abstract: 64pin-LQFP-form CIRCUIT DIAGRAM OF MICRO SD MMC alcor Alcor Micro usb 3 sm Flash drive controller USB 2.0 SD card reader
Text: 1 Data Book AU6369 USB 2.0 Single-Slot Flash Memory Card Reader Technical Reference Manual Product Specification Official Release Revision 3.02W Public Sep 2005 Data sheet status Objective specification This data sheet contains target or goal specifications for
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AU6369
AU6369
64pin-LQFP-form
CIRCUIT DIAGRAM OF MICRO SD MMC
alcor
Alcor Micro
usb 3 sm Flash drive controller
USB 2.0 SD card reader
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Untitled
Abstract: No abstract text available
Text: HYMD2646468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 93 107 90 104 pF Input Capacitance RAS, CAS, WE CIN2 93 107 90 104 pF Input Capacitance CKE0, CKE1 CIN3 63 77 58 72 pF
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HYMD2646468-K/H/L
64Mx64
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K4B1G0846F-HCH9
Abstract: Design Guide for DDR3-1066 K4B1G0446F-HCH9 DDR3 DIMM 240 pinout DDR3-1866 JESD79-3B K4B1G0846F-HCK0 HCH9 samsung ddr3 DDR3-1066
Text: 1Gb DDR3 SDRAM K4B1G04 08 46F 1Gb F-die DDR3 SDRAM Specification 78 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4B1G04
K4B1G0846F-HCH9
Design Guide for DDR3-1066
K4B1G0446F-HCH9
DDR3 DIMM 240 pinout
DDR3-1866
JESD79-3B
K4B1G0846F-HCK0
HCH9
samsung ddr3
DDR3-1066
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PDF
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HYMD232646A8
Abstract: No abstract text available
Text: 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD232646A8J-D4/D43 PRELIMINARY DESCRIPTION Hynix HYMD232646A8J-D series are unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232646A8J-D series consist of eight 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.Hynix
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32Mx64
HYMD232646A8J-D4/D43
HYMD232646A8J-D
184-pin
32Mx8
400mil
184pin
HYMD232646A8
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Untitled
Abstract: No abstract text available
Text: 16Mx64 bits Unbuffered DDR SDRAM DIMM HYMD116645D L 8J DESCRIPTION Hynix HYMD116645D(L)8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD116645D(L)8J series consists of eight 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate.Hynix
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16Mx64
HYMD116645D
184-pin
16Mx8
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD232646A8J DESCRIPTION Hynix HYMD232646A8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232646A8J series consists of
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32Mx64
HYMD232646A8J
HYMD232646A8J
184-pin
32Mx8
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: 32Mx64 bits Unbuffered DDR SDRAM DIMM HYMD232646B8J DESCRIPTION Hynix HYMD232646B8J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232646B8J series consists of
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32Mx64
HYMD232646B8J
HYMD232646B8J
184-pin
32Mx8
400mil
184pin
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