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    Dawin Electronics Co Ltd DM2G300SH6N

    High Power Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel
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    DM2G300SH6N

    Abstract: DM2G300SH dm2g
    Text: DM2G300SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


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    PDF DM2G300SH6N Fig12. DM2G300SH6N DM2G300SH dm2g

    dawin

    Abstract: DM2G300SH6NE DM2G300SH DM2G300SH6N
    Text: D W DAWIN Electronics TM DM2G300SH6NE Aug. 2009 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.


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    PDF DM2G300SH6NE dawin DM2G300SH6NE DM2G300SH DM2G300SH6N