FET bias
Abstract: No abstract text available
Text: TetraFET DMD1009 DMD1009-A METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS
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DMD1009
DMD1009-A
500MHz
UT85-15
25swg
FT50B-43
FET bias
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Untitled
Abstract: No abstract text available
Text: TetraFET DMD1009 DMD1009-A METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls G (typ) 2 3 1 H P (2 pls) A D 5 4 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS
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DMD1009
DMD1009-A
500MHz
UT85-15
25swg
FT50B-43
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UT85-15
Abstract: FT50B-43 UT85 coax 064R DMD1009 DMD1009-A UT85 25swg FT50B
Text: TetraFET DMD1009 DMD1009-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS
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DMD1009
DMD1009-A
500MHz
25swg
FT50B-43
UT85-15
UT85 coax
064R
DMD1009
DMD1009-A
UT85
FT50B
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Untitled
Abstract: No abstract text available
Text: TetraFET DMD1009 DMD1009-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 5 4 E (4 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL F I FEATURES • SUITABLE FOR BROAD BAND APPLICATIONS
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Original
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DMD1009
DMD1009-A
500MHz
25swg
FT50B-43
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GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
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GNS530
GNS430
750mW
break400
1-200MHz
1-500MHz
1-400MHz
D5014UK
D1028UK
d5017
D2089
D2207UK
D1029UK
d2253
d5030
D5003UK
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