Untitled
Abstract: No abstract text available
Text: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Short Form Data Sheet DO-9 package 16.5 0.66" Part num ber schem e DO-9 K 41 N 12 KNX 8.5 (0.33") 3.3 (5/32") 1 11 ! 0.5 (7/16") 210 ! 5 (8.33") X X X X 5 6 Black Silicone Rubber Sleeve All diffused silicone.
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Untitled
Abstract: No abstract text available
Text: ST POLYMER MULTI-LAYER CAPACITORS ST SERIES ◆FEATURES ・Surface-mounted device. ・Lead free reflow soldering is available. ・RoHS compliance. ◆CAUTION ST series shall be used in only reflow method. Do not use in flow, dipping, and VPS soldering method.
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63ST473â
A13216
63ST683â
63ST104â
63ST154â
63ST224â
A23216
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Untitled
Abstract: No abstract text available
Text: ST POLYMER MULTI-LAYER CAPACITORS ST UPGRADE SERIES ◆FEATURES ・Surface-mounted device. ・Lead free reflow soldering is available. ・RoHS compliance. ◆CAUTION ST series shall be used in only reflow method. Do not use in flow, dipping, and VPS soldering method.
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Toler223â
Z12012
63ST333â
Z22012
63ST473â
A13216
63ST683â
63ST104â
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Untitled
Abstract: No abstract text available
Text: POLYMER MULTI-LAYER CAPACITORS ST ST UPGRADE SERIES ◆FEATURES ・Surface-mounted device. ・Lead free reflow soldering is available. ・RoHS compliance. ◆CAUTION ST series shall be used in only reflow method. Do not use in flow, dipping, and VPS soldering method.
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0122F
63ST103A13216
63ST153A13216
63ST223A13216
63ST333A13216
63ST473A13216
63ST683A13216
63ST104A13216
63ST154A13216
63ST224A23216
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NJM2100
Abstract: No abstract text available
Text: APPLICATION NOTE H8/300L SLP Series Producing a "Beep" Introduction Beep sounds do, re, mi, fa, sol, la, ti, do are assigned to eight key switches and a 'beep' is output while a switch is pressed. A 'beep' is produced by converting a PWM output waveform by an external D/A converter and is output from a
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H8/300L
H8/38024
REJ06B0295-0100Z/Rev
NJM2100
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Untitled
Abstract: No abstract text available
Text: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Short Form Data Sheet DO-8 package 16.5 0.66" Part num ber schem e DO-8 A 15 N 12 KNX 8.5 (0.33") 3.3 (5/32") Pa r t # D O- 8 A1 5 N . . se r ie s I F( AVE) 1 5 0 A V RRM 1 2 0 0 V ~ 1 6 0 0 V
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Untitled
Abstract: No abstract text available
Text: MU POLYMER MULTI-LAYER CAPACITORS MU UPGRADE SERIES ◆FEATURES ・Best suited for audio equipment. ・Surface-mounted device. ・Lead free reflow soldering is available. ・Flow soldering is available. ・RoHS compliance. ◆CAUTION MU series shall be used in reflow and flow soldering method. Do not use in VPS soldering method.
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1N400X
Abstract: No abstract text available
Text: P re li min a ry Da t a Sheet General Purpose Rectifiers Standard Recovery Plastic Silicon Rectifiers AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded Weight: 0.4 gram approximately Finish: All external surfaces corrosion resistant and terminal leads are
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DO-41
1N400X
TC1N4001
TC1N4007
1N400X
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XAPP408
Abstract: Gate level simulation without timing
Text: Application Note: Template R XAPP408 v1.02 October 16, 2000 Summary Re-Thinking Your Verification Strategies for Multimillion Gate FPGAs Author: Thomas D. Tessier, T2 Design FPGA verification is essential for successful time-to-market product delivery. But how do you
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XAPP408
com/xcell/xl33/xl33
com/xcell/xl36/xl36
com/xcell/xcell29
XAPP408
Gate level simulation without timing
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Untitled
Abstract: No abstract text available
Text: 3 900 Se ries So ftwa re Up gr ad e Pro ced u re RE QUIR ED Pr eli m in ary Pr oc ed u res If Te st Set cont ains soft war e prior to Ver sion 1.6 , DO NO T pr oceed wi th softw ar e upgra de. Cont act Aer ofle x Cu st omer service. • Inst all an y new License Opt ion files befor e b eginnin g the Sof tw are Upg rade pro ce dure .
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u34 diode
Abstract: 1N4454UR-1 1N4454 1N4454-1 DO-213AA LL4454 diode 1n4454 BKC Semiconductors 3-4U34
Text: Silicon Switching Diode 1N4454 DO-35 Glass Package Applications Used in genera! purpose applications, whereperformanpe andswitching DO-35 Glass Package F e a tu re nominal dimensions ;PKC'sSipsa Bond jplatiriig - Length fbrprobiernfree solderability 0.145"
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1N4454
DO-35
U-34/35
Mil-S-195007144
100mA,
1N4454-1
DO-213AA
LL4454)
1N4454UR-1)
Q1841
u34 diode
1N4454UR-1
1N4454
LL4454
diode 1n4454
BKC Semiconductors
3-4U34
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U23A
Abstract: Western Electric 832 tube cold cathode
Text: ADVANCE ELECTRON TUBE DATA SHEET WESTERN ELECTRIC 423A ELECTRON TUBE 423 A M IN IATU RE COLD CATHODE 2 ELECTRODE 7" ••g-MAXH [— MEASURED AT 7/16 DIA. ON BULB DO NOT CONNECT DO NOT CONNECT I“ l-g-MAX. i T62 BULB | max. l- U l '8 '3 2 DO NOT CONNECT
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Untitled
Abstract: No abstract text available
Text: 2020-11 20 chars x 2 lines STN/FSTN LED/CCFL • ABSOLUTELY MAXIMUM RATINGS ■ ELECTRICAL CHARACTERISTICS Standard Value Symbol Item Min S upply V oltage for L ogic V S upply V oltage for L C D D rive do -V V, O peration T em p eratu re T Storage T em p eratu re
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Untitled
Abstract: No abstract text available
Text: CONNECTOR DO ASSEMBLY EXEMPLARY CONTACT DIMENSIONS NOT SCALE DIM ENSIONS LOADED CONTACT LEVEL IN RE CO M M EN DE D a 4,9±0,05 PC B-HO LE b < o -26,8 -1 5 , 4 - m 3,80 u 0,1 CL Ll o A C T IO N PIN A RE A CONTACT A RE A Ld O Q Ld REFERENCE 20,0 1 1 LINE d e
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fuzzy temperature controller C code
Abstract: MCS-96 software design information MCS-96 development 8xC196 code for FUZZY MICROCONTROLLER
Text: Q2, 1993 Intel Microcontrollers Do Fuzzy Logic! Joe Altnether Senior Technical Marketing Engineer Intel Corporation Article #0401 Two complementary technologies are being enlisted not only to solve new classes of applications but also to re address existing applications. Neural networks and fuzzy
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80C186
fuzzy temperature controller C code
MCS-96 software design information
MCS-96 development
8xC196
code for FUZZY MICROCONTROLLER
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING AND DE5I0N HEREON CON STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC DIVISION DO NOT SCALE DATE SYM REVISION RECORD AUTH DR CK 2 3 AP 92 C RE D R A W N & RE VI SE D
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09AU84
L2045884-t
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oa47 diode
Abstract: diode OA47 OA47 oa47 characteristics OA47 germanium diode OA-47 OA47 germanium diode Diode germanium oa germanium diode GOLD germanium diode
Text: OA47 GOLD BONDED DIODE Gold bonded germ anium diode in subm iniature all g lass DO-7 envelope, intended fo r sw itching applications and general p u rp o se s. QUICK REFERENCE DATA Continuous re v e rs e voltage Vr m ax. 25 V R epetitive peak re v e rs e voltage
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Re-50/1,
oa47 diode
diode OA47
OA47
oa47 characteristics
OA47 germanium
diode OA-47
OA47 germanium diode
Diode germanium oa
germanium diode GOLD
germanium diode
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907 mylar capacitor
Abstract: No abstract text available
Text: CS61582 Preliminary Semiconductor Corporation Dual Low Power T1/E1 Line Interface General Description Features • Dual Analog T1/E1 Line Interface Optimized for Multiplexer Applications • Transmit Jitter Attenuators which do not re quire external quartz crystals
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CS61582
CS61582
64-pin
DS182PP1
907 mylar capacitor
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smm 300
Abstract: 101G 103G HER101G HER108G
Text: % HER101G - HER108G TAIWAN SEMICONDUCTOR 1.0AMP. Glass Passivated High Efficient Rectifiers RoHS DO-41 COMPLIANCE -S2I- .107 2 .7 .080 (2 .0 ) 1.0 ( 25.4 ) MIN. DIA. F e a tu re s 4-v* <0* > 4- U l Glass passivated chip junction. High efficiency, Low V F
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HER101G
HER108G
DO-41
HER10X0
UL94V-Orate
MIL-STD-202,
smm 300
101G
103G
HER108G
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BZX85C
Abstract: BZX85C110
Text: FAGOR Zenez diodes. 1.3 W. T h e plastic m a teria l c a rrie s U L re co g n itio n 9 4 V -0 . BZX8S Series. Zener Diodes in Plastic Case: DO-41 TA= 25°C . Outline: 1 Type Vz T y p ical T e m p e ra tu re C oefficient ZZT at IZT ^ZT Min. R e v e rs e V o lta g e
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DO-41
BZX85C
BZ260
BZX85C110
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Untitled
Abstract: No abstract text available
Text: 9 166 0159-22 - CHARACTERISTICS: CARACTERISTIQUES: Temperature d'utllisation: -55°C a+175°C Materlaux: Thermoplastique et silicone fhjore Tension de tenue: 1300 V eff .50Hz Contact a picot: Do re Avant des contacts normalise suivant: MIL C 39029/58_360 Y K Marquages sur la face opposee aux cles.
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204-I9-A/FOO
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CLA 80 E 1200
Abstract: 2EZ11 2EZ12 2EZ13 2EZ14 2EZ15 2EZ16 2EZ200 LF-500
Text: 2EZ11 THRU 2EZ200 TRANSYS ELECTRONICS GLASS PASSIVATED JUNCTION SILICON ZENER DIODE LIMITED VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts FEATURES Low prof e package DO-15 Built-in strain re ef Glass passivated junction Low inductance Excellent clamping capab ity
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2EZ11
2EZ200
DO-15,
MIL-STD-750,
CLA 80 E 1200
2EZ12
2EZ13
2EZ14
2EZ15
2EZ16
2EZ200
LF-500
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN163- NC Silicon NPN Phototransistor For optical control systems • Features • H ig h sensitivity • F a st re sp o n se : tr = 4 jlls (typ.) • A do p tio n o f v isib le lig h t c u to ff resin • U ltram in iatu re, th in side-view type p ack ag e
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PN163-
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS 'emiconductor Mechanical Dimensions JEDEC DO-15 .230 .300 1.00 Min. + J, T T .031 typ. .1041 .140 ^ F e a tu re s CQ • FAST SWITCHING FOR HIGH EFFICIENCY ■ 1X1 AMP OPERATION T = 55°C, WITH NO THERMAL RUNAWAY
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DO-15
51X25X30cm
21X21X5
47X22X27cm
KBPC10
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