DO THE WORK A TRANSISTOR Search Results

DO THE WORK A TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

DO THE WORK A TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
application of chopper amplifier Abstract: AD857x MONOLITHIC AMPLIFIERS Text: Demystifying Auto-Zero Amplifiers—Part 1 They essentially eliminate offset, drift, and 1/f noise. How do they work? Is there a downside? by Eric Nolan INTRODUCTION Whenever the subject of auto-zero or chopper-stabilized amplifiers comes up, the inevitable first question is “How do they really work?”	Original	200-kHz application of chopper amplifier AD857x MONOLITHIC AMPLIFIERS	PDF
C1995 Abstract: LB-26 Text: National Semiconductor Linear Brief 26 October 1973 It is not infrequent that commercially available standard IC components do not fit a particular application as they are specified Often however a standard device selected to tighter limits will work Thereupon the IC manufacturer may	Original		PDF
LB-26 Abstract: No abstract text available Text: National Semiconductor Linear Brief 26 October 1973 It is not infrequent that commercially available standard IC components do not fit a particular application as they are specified. Often, however, a standard device selected to tighter limits will work. Thereupon, the IC manufacturer may	Original		PDF
SS49E Abstract: pololu pair of led and photo transistor Pololu 2284 motor 2N3904 NPN Transistor ss49e hall effect led digital watch circuit diagram SS49E hall 25Dx52L emitter phototransistor Text: M.E. 530.420 Lab 1: LEDs, Photo-Transistors, Hall-Effect Sensors, and Incremental Optical Encoders Louis L. Whitcomb ∗ Department of Mechanical Engineering G.W.C. Whiting School of Engineering The Johns Hopkins University Rev 02 Laboratory Due Date: 6:00PM Tuesday September 13, 2011 at 115 Hackerman Hall	Original		PDF
J3305-2 y transistor Abstract: No abstract text available Text: Application Note AN01 - Transistor Testing Over the past decade, Elm Electronics has helped many experimenters that were having trouble getting their circuits working. Experience has shown that the majority of problems were related to the incorrect connection of transistors in the circuit. Even the most	Original		PDF
SNW-EQ-611 Abstract: construction of varactor diode tunnel diode GaAs Germanium Transistor Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 Thermal considerations 7 Handling MOS devices 8 Philips Semiconductors Small-signal and Medium-power MOS transistors General necessary corrective action. Process steps are under	Original	SNW-EQ-611 MLB049 construction of varactor diode tunnel diode GaAs Germanium Transistor	PDF
Untitled Abstract: No abstract text available Text: Advanced Power Electronics Corp. AP28G40GEH/J-HF-3 Insulated Gate Bipolar Power Transistor 400V VCE High Input Impedance I CP 150A High Peak Current Capability G Low Gate Drive C E TO-252 H C Strobe Flash Applications G RoHS-compliant, halogen-free packages	Original	AP28G40GEH/J-HF-3 O-252 O-251 AP28G40 28G40GEJ O-251	PDF
TRANSISTOR SMD MARKING CODE NM Abstract: thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF General • Acceptance tests on finished products to verify conformance with the device specification. The test	Original	SC08b MLB049 TRANSISTOR SMD MARKING CODE NM thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor	PDF
LQ14D311 Abstract: HCFT 57168 57161 Text: LQ14D311 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 14.2" The SHARP LQ14D311 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,	Original	LQ14D311 LQ14D311 HCFT 57168 57161	PDF
pepi c Abstract: 2SC4938 2SD1664 2SD1760 G746 SC101 mosfet nepi Text: Operation notes Transistors Operation notes !Selecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum	Original	2SC4938) 2SD1760) 2SD1664) pepi c 2SC4938 2SD1664 2SD1760 G746 SC101 mosfet nepi	PDF
transistor working principle Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron Text: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.	Original	AN3025 transistor working principle weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron	PDF
JC337 Abstract: JC327 JC337-25 SC-43A Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 JC337 NPN general purpose transistor Product specification Supersedes data of 1999 Apr 27 2004 Dec 09 Philips Semiconductors Product specification NPN general purpose transistor JC337 FEATURES PINNING	Original	M3D186 JC337 JC327. MAM259 SCA76 R75/04/pp6 JC337 JC327 JC337-25 SC-43A	PDF
BFV421 Abstract: BFV420 SC-43A Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFV421 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 23 2004 Nov 11 Philips Semiconductors Product specification PNP high-voltage transistor BFV421 FEATURES PINNING • High voltage	Original	M3D186 BFV421 BFV420. MAM285 SCA76 R75/03/pp6 BFV421 BFV420 SC-43A	PDF
Bf240 Abstract: bF240 transistor SC-43A BF240 philips Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1999 Apr 21 2004 Nov 05 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING	Original	M3D186 BF240 MAM258 SCA76 R75/05/pp6 Bf240 bF240 transistor SC-43A BF240 philips	PDF

BF550 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low current max. 25 mA	Original	BF550 MAM256 SCA76 R75/04/pp6 BF550	PDF
PNP POWER TRANSISTOR SOT23 Abstract: PMBTA42 15 A PNP TRANSISTOR marking code 10 sot23 PMBTA92 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 13 2004 Jan 22 Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING • Low current max. 100 mA	Original	PMBTA92 PMBTA42. MAM256 SCA76 R75/05/pp6 PNP POWER TRANSISTOR SOT23 PMBTA42 15 A PNP TRANSISTOR marking code 10 sot23 PMBTA92	PDF
mpsa14 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 1999 Apr 27 2003 Oct 22 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA	Original	M3D186 MPSA14 MPSA14 MPSA64. MAM252 SCA75 R75/05/pp6	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors RF Wideband Transistors General section ELECTROSTATIC CHARGES RECEIPT AND STORAGE Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins,	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Small-signal Field-effect Transistors General section ELECTROSTATIC CHARGES RECEIPT AND STORAGE Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins,	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Small-signal Field-effect Transistors General Measuring and testing of completed circuit boards must be done at a protected work station. Place the soldered side of the circuit board on conductive or antistatic foam and remove the short-circuit clips. Remove the circuit board	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Thermal considerations PowerMOS Transistors The elements of thermal resistance shown in Fig.2 are defined as follows: THERMAL CONSIDERATIONS Thermal resistance Circuit performance and long-term reliability are affected by the temperature of the transistor die. Normally, both are	OCR Scan		PDF
RF Transistor s-parameter Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4 Text: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd, L.F. Tiemeijer, and E.F. Weagel ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA	OCR Scan		PDF
rohm transistors Abstract: No abstract text available Text: Introduction Structure of part numbers MOSFET and bipolar transistors The part numbers of ROHM transistors are composed of the following four blocks: 2SC4015 1 TL2 IT M “ 3" ~4~ where: 1 Product number 9 characters or less 2 Special specification code (3 characters or less). Left blank for standard specifications	OCR Scan	2SC4015 SC101 rohm transistors	PDF
Astec Semiconductor Abstract: No abstract text available Text: < AS17XX ////> ASTEC Semicustom Bipolar Array Features Description Size single tile The AS 17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is	OCR Scan	AS17XX AS17xx Astec Semiconductor	PDF

DO THE WORK A TRANSISTOR Search Results

DO THE WORK A TRANSISTOR Result Highlights (5)

DO THE WORK A TRANSISTOR Datasheets Context Search

application of chopper amplifier

C1995

LB-26

SS49E

J3305-2 y transistor

SNW-EQ-611

Untitled

TRANSISTOR SMD MARKING CODE NM

LQ14D311

pepi c

transistor working principle

JC337

BFV421

Bf240

BF550

PNP POWER TRANSISTOR SOT23

mpsa14

Untitled

Untitled

Untitled

Untitled

RF Transistor s-parameter

rohm transistors

Astec Semiconductor