HZS6LB2
Abstract: HZS6L
Text: HZS-L Series Zener Diodes PD : 400 mW DO - 34 Glass Features High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data Case: DO-34 Glass Case Weight: approx. 0.093g Dimensions in inches and millimeters
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DO-34
HZS33L
HZS36L
HZS36-3L
HZS6LB2
HZS6L
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MTZJ 188
Abstract: 05w18 MTZJ SERIES ZENER DIODES 52855 05W1 05W2 05W3 05W4 05WS1 05WS2
Text: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1.1. DO-34: 单 位: mm CATHODE BAND Φ0.4±0.1 Φ1.8±0.2 29±1 2.7±0.3 29±1 1.2 DO-35 单 位:(mm) CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 1/8 LESHAN RADIO COMPANY, LTD. 2. ProductCharacteristic
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DO-34:
DO-35
05WS2
05WS3
DO-34
10pcs/each
5000pcs/each
MTZJ 188
05w18
MTZJ SERIES ZENER DIODES
52855
05W1
05W2
05W3
05W4
05WS1
05WS2
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zener db3
Abstract: DIAC-Triac diode zener db3 DB3 ZENER diode diode db3 51 zener japan do-35 DIAC-Triac* 120v diac temperature control circuit diac 40 diac DB-3
Text: LESHAN RADIO COMPANY, LTD. 1. Feature&Dimension 1.1. DO-34: 单 位: mm CATHODE BAND Φ0.4±0.1 Φ1.8±0.2 29±1 2.7±0.3 29±1 1.2 DO-35 单 位:(mm) CATHODE BAND Φ0.5±0.1 29±1 3.8±0.2 29±1 Φ1.8±0.2 1/6 LESHAN RADIO COMPANY, LTD. BI-DIRECTIONAL TRIGGER DIODES
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DO-34:
DO-35
DO-35
DO-34
10pcs/each
5000pcs/each
zener db3
DIAC-Triac
diode zener db3
DB3 ZENER diode
diode db3 51
zener japan do-35
DIAC-Triac* 120v
diac temperature control circuit
diac 40
diac DB-3
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Untitled
Abstract: No abstract text available
Text: HZS-L Series ZENER DIODES DO - 34 Glass PD : 400 mW FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA 1.00 (25.4) min.
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DO-34
HZS16L
HZS18L
HZS20L
HZS22L
HZS24L
HZS27L
HZS30L
HZS33L
HZS36L
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Zener Diode C3 5
Abstract: HZS6L HZS7L a1 55 a3 6 zener HZS18L HZS20L Silicones Zener Diode B1 9 HZS11L
Text: TH97/10561QM HZS-L Series TW00/17276EM IATF 0060636 SGS TH07/1033 ZENER DIODES DO - 34 Glass PD : 400 mW 1.00 25.4 min. 0.078 (2.0 )max. FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 0.118 (3.0)
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TH97/10561QM
TW00/17276EM
TH07/1033
DO-34
HZS16L
HZS15L
HZS36-3L
Zener Diode C3 5
HZS6L
HZS7L
a1 55
a3 6 zener
HZS18L
HZS20L
Silicones
Zener Diode B1 9
HZS11L
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6621R
Abstract: AWT6621RM45P9 CDMA2000-RC1
Text: AWT6621 HELP4 UMTS2100 Band 1 WCDMA/CDMA Linear PAM TM Data Sheet - Rev 2.1 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6621 41 % @ POUT = +28.2 dBm 34 % @ POUT = +17.5 dBm 21 % @ POUT = +13.5 dBm
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UMTS2100
AWT6621
6621R
AWT6621RM45P9
CDMA2000-RC1
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AWT6621RM45Q7
Abstract: No abstract text available
Text: AWT6621 HELP4 UMTS2100 Band 1 WCDMA/CDMA Linear PAM TM Data Sheet - Rev 2.0 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6621 41 % @ POUT = +28.3 dBm 34 % @ POUT = +17.5 dBm 21 % @ POUT = +13.5 dBm
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UMTS2100
AWT6621
AWT6621RM45Q7
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C15 DO-34
Abstract: BZX55c5v1 Series BZX55 BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3 BZX55C3V6 BZX55C3V9 BZX55C4V3
Text: BL GALAXY ELECTRICAL BZX55 - SERIES ZENER DIODES POWER DISSIPATION: 500 mW FEATURES DO-34 GLASS Silicon planar power zener diodes The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ±5%. Replace suffix "C" with "B" for ±2%,
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BZX55
DO-34
DO-35,
DO-35
MIL-STD-202,
speci50
BZX55---SERIES
BZX55.
C15 DO-34
BZX55c5v1 Series
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
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Untitled
Abstract: No abstract text available
Text: AWT6622 TM HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Eficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm
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AWT6622
UMTS1900
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Untitled
Abstract: No abstract text available
Text: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.8 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6622 41 % @ POUT = +28.8 dBm 34 % @ POUT = +17 dBm
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AWT6622
UMTS1900
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Untitled
Abstract: No abstract text available
Text: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm
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UMTS1900
AWT6622
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UMTS1900
Abstract: No abstract text available
Text: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm
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UMTS1900
AWT6622
UMTS1900
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6621R
Abstract: AWT6621RM45Q7 HELP4TM UMTS2100 awt6621rm45p9
Text: AWT6621 HELP4 UMTS2100 Band 1 WCDMA/CDMA Linear PAM TM Data Sheet - Rev 2.2 FEATURES • Mixed-Mode (HSPA, EV-DO) Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6621 41 % @ POUT = +28.2 dBm 34 % @ POUT = +17.5 dBm 21 % @ POUT = +13.5 dBm
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AWT6621
UMTS2100
6621R
AWT6621RM45Q7
HELP4TM
UMTS2100
awt6621rm45p9
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UMTS1900
Abstract: AWT6622R
Text: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.3 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm
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UMTS1900
AWT6622
UMTS1900
AWT6622R
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LL00P
Abstract: dd13231 MH88434
Text: MH88434-P MITEL. Data Access Arrangement Preliminary Information Features FAX and Modem interface V.34/V.34+ E xternally program m able line im pedance Isolation conform s to FCC/DO C requirem ents Transform erless 2-4 W ire conversion O rdering Inform ation
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MH88434-P
MH88434-P
H88434-PS
MH88434
LL00P
dd13231
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glass diode yellow band
Abstract: bb809 S0068 diode
Text: Philips Semiconductors Product specification VHF variable capacitance diode BB809 FEATURES • High linearity • Matched to 3% • Hermetically sealed leaded glass SOD68 DO-34 package fl J—L i tl -H«— MAM1S9 • C28: 4.7 pF; ratio: 9 • Low series resistance.
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BB809
DO-34)
BB809
MAM159
01GS37G
glass diode yellow band
S0068
diode
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S0068
Abstract: BB405B
Text: Product specification Philips Semiconductors UHF variable capacitance diode BB405B FEATURES • Excellent linearity • Matched to 3% [ 1I 1 J • Hermetically sealed leaded glass SOD68 DO-34 package I! D¥h « J i MAM159 • C28: 2 pF; ratio: 8.3 • Low series resistance.
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BB405B
DO-34)
BB405B
MAM159
DL053b0
S0068
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BB910 TO-92S
Abstract: S0068 BB910 diode
Text: Philips Semiconductors Product specification VHF variable capacitance diode BB910 FEATURES • Excellent linearity ^—11 dm • Matched to 2.5% • Hermetically sealed leaded glass SOD68 DO-34 package 'c=i —m— M A M 234 • C28: 2.5; ratio: 16 • Low series resistance.
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BB910
DO-34)
BB910
MAM234
711005t,
01C537C1
BB910 TO-92S
S0068
diode
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Untitled
Abstract: No abstract text available
Text: BZV60 SERIES _ A VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended for use as low voltage stabilizers or voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series
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BZV60
DO-34
0033Tb7
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BZX55C0V8S
Abstract: No abstract text available
Text: Zener Diodes B Z X 55.S S eries500 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type BZX55-C0V8S 1) BZX55-C2V7S BZX55-C3V0S BZX55-C3V3S BZX55-C3V6S BZX55-C3V9S BZX55-C4V3S BZX55-C4V7S BZX55-C5V1S BZX55-C5V6S BZX55-C6V2S BZX55-C6V8S BZX55-C7V5S BZX55-C8V2S
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eries500
DO-34
BZX55-C0V8S
BZX55-C2V7S
BZX55-C3V0S
BZX55-C3V3S
BZX55-C3V6S
BZX55-C3V9S
BZX55-C4V3S
BZX55-C4V7S
BZX55C0V8S
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Variable capacitance diodes
Abstract: S0068 BB909A BB909B 01DS3 glass diode green band
Text: Philips Semiconductors Product specification VHF variable capacitance diodes BB909A; BB909B FEATURES • Excellent linearity • Matched to 2.5% @ • Hermetically sealed leaded glass SOD68 DO-34 package r 5— H flT l Ir~ = 3 — M — M A M 234 • C28: 2.9 pF; ratio: 13.5
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BB909A;
BB909B
DO-34)
BB909A,
BB909B
MAM234
BB909A
BB909B)
Variable capacitance diodes
S0068
01DS3
glass diode green band
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C15 DO-34
Abstract: diode 400mw 4v7 b5v6 BZV60 BZV60-C
Text: BZV60 SERIES A _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series
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BZV60
DO-34
OD-68
DO-34)
400mWl
03EcJba
7Z69449
C15 DO-34
diode 400mw 4v7
b5v6
BZV60-C
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C15 DO-34
Abstract: B6V2 C3V33
Text: BZV60 SERIES J \ _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series
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BZV60
DO-34
OD-68
DO-34)
7Z83041
C15 DO-34
B6V2
C3V33
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S0068
Abstract: DO-34 PACKAGE diode
Text: Product specification Philips Semiconductors VHF variable capacitance diode BB911/A FEATURES • High linearity > ID = ^ • Matched to 2.5% • Hermetically sealed leaded glass SOD68 (DO-34 package - M - M A M 234 • C28: 2.7 pF; ratio: 25. Cathode side indicated by a red band on a black body.
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BB911/A
DO-34)
BB911/A
MAM234
711Dfl2fci
S0068
DO-34 PACKAGE
diode
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