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    DO-40 DIODE Search Results

    DO-40 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DO-40 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FAIRCHILD 1N459A

    Abstract: do-35 1N4009 1N459a 1N459 1N485B 1N486B 1N625 FDH300 FDH666
    Text: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING t rr (Cont’d) GLASS PACKAGE Item DEVICE NO. *rr ns Max BV V Min 1 FDH666 4.0 40 'F mA C pF Max Package No. 1.0 100 3.5 DO-35 4.0 • DO-35 4.0 DO-35 DO-35 5.0 DO-35 Vr V vF V Max 100 25 |r nA Max


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    FDH666 DO-35 1N44S0 1N4009 1N625 FDH999 FAIRCHILD 1N459A do-35 1N459a 1N459 1N485B 1N486B FDH300 PDF

    1N456

    Abstract: 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
    Text: Diode Data NATL SEMICOND DISCRETE HE D [ faSQliaO 0037GQ1 7 | Low Leakage Diodes Glass Package Device No. 1N456 Package No. DO-35 VRRM V Min •r nA Max 30 25 Vr V If mA C PF Max 1.0 40 10 VF v Min 25 ® Max 1N456A DO-35 30 25 25 1.0 100 1N457 DO-35 70


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    fa5Q1130 0037GQ1 1N456 DO-35 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000 PDF

    fjt1101

    Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
    Text: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125


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    1N456 DO-35 1N456A 1N457 1N457A 1N458 fjt1101 FJT1102 1N459A FJT1100 1N458A PDF

    1N4450

    Abstract: DO-204AH
    Text: Certificate TH97/10561QM 1N4450 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min.


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    TH97/10561QM 1N4450 TW00/17276EM DO-204AH) DO-35 1N4450 DO-204AH PDF

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    Abstract: No abstract text available
    Text: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free


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    BAX14 DO-204AH) DO-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.


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    1N4152 DO-204AH) DO-35 PDF

    RB721Q-40

    Abstract: No abstract text available
    Text: Certificate TH97/10561QM RB721Q-40 Certificate TW00/17276EM SCHOTTKY BARRIER DIODE DO - 34 Glass PRV : 40 Volts IO : 30 mA 1.00 25.4 min. 0.063 (1.6 )max. FEATURES : * Silicon epitaxial planar * Low forward voltage * Small pitch enables insertion on PCBs.


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    TH97/10561QM RB721Q-40 TW00/17276EM DO-34 RB721Q-40 PDF

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    Abstract: No abstract text available
    Text: 1N4450 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • • • • High switching speed: max. 4 ns Reverse voltage:max. 30 V Peak reverse voltage:max. 40 V Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)


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    1N4450 DO-204AH) DO-35 PDF

    1N4933-E3

    Abstract: 1N4933 1N4937 DO-204AL JESD22-B102D J-STD-002B 1N4935 Vishay
    Text: 1N4933 thru 1N4937 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41


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    1N4933 1N4937 DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 1N4933-E3 1N4937 DO-204AL JESD22-B102D J-STD-002B 1N4935 Vishay PDF

    SRP100D

    Abstract: DO-204AL JESD22-B102 J-STD-002 SRP100A SRP100K
    Text: SRP100A thru SRP100K Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s DO-204AL DO-41


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    SRP100A SRP100K DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, 18-Jul-08 SRP100D DO-204AL JESD22-B102 J-STD-002 SRP100K PDF

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    Abstract: No abstract text available
    Text: 1N4933 thru 1N4937 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41


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    1N4933 1N4937 DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, J-STD-002B JESD22-B102D 08-Apr-05 PDF

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    Abstract: No abstract text available
    Text: SRP100A thru SRP100K Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41


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    SRP100A SRP100K DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, UL-94V-0 08-Apr-05 PDF

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    Abstract: No abstract text available
    Text: SRP100A thru SRP100K Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s DO-204AL DO-41


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    SRP100A SRP100K DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, UL-94V-0 J-STD-002 JESD22-B102 PDF

    DO-204AL

    Abstract: JESD22-B102D J-STD-002B SRP100A SRP100K
    Text: SRP100A thru SRP100K Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41


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    SRP100A SRP100K DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 DO-204AL JESD22-B102D J-STD-002B SRP100K PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4933 thru 1N4937 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41


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    1N4933 1N4937 DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, 08-Apr-05 PDF

    1n4007 do-35

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s DO-204AL DO-41 • Component in accordance to RoHS 2002/95/EC


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    1N4001 1N4007 DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, J-STD-002 JESD22-B102 08-Apr-05 1n4007 do-35 PDF

    1N5394

    Abstract: No abstract text available
    Text: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41 • Component in accordance to RoHS 2002/95/EC


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    1N5391 1N5399 DO-204AL DO-41) 2002/95/EC 2002/96/EC DO-204AL, J-STD-002B JESD22-B102D 08-Apr-05 1N5394 PDF

    DIODE 1N827

    Abstract: No abstract text available
    Text: IN T E R N A T IO N A L •=1000370 0000007 T 40 « I S E M 41E S EM IC O N D JEDEC REGISTERED, TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DO-7 Package MAXIMUM RATINGS MECHANICAL Operating Temperature: -65°Cto+200°C Herm etically Sealed DO-35 Storage Temperature: -65°C to +200°C


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    DO-35 1N823 1N827 1N3498 1N4568 1N4571 DO-15 DO-201 DIODE 1N827 PDF

    1N5810 diode

    Abstract: No abstract text available
    Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop


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    1N5817 1N5819 DO-204AL DO-41) AEC-Q101 2011/65/EU 2002/96/EC MIL-STD-750 1N5810 diode PDF

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    Abstract: No abstract text available
    Text: MBR7520 thru MBR7540R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 75 A Features • High Surge Capability • Types from 20 V to 40 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.


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    MBR7520 MBR7540R MBR7530 MBR7535 MBR7540 DO-203AB) PDF

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    Abstract: No abstract text available
    Text: BYS11-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 90 V IFSM 40 A VF 0.75 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • • • • • • • Case: DO-214AC (SMA)


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    BYS11-90 DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 PDF

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    Abstract: No abstract text available
    Text: DSS 1-40BA Advanced Technical Information IFAV = 1 A VRRM = 40 V VF = 0.34 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMA DO-214 AC on product A DSS 1-40BA X1EB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5


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    1-40BA DO-214 PDF

    DO-214 Marking

    Abstract: diode DO214 marking aa diode DO-214 diode
    Text: DSS 2-40BB Advanced Technical Information IFAV = 2 A VRRM = 40 V VF = 0.33 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMB DO-214 AA on product DSS 2-40BB A X2EBB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5


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    2-40BB DO-214 DO-214 Marking diode DO214 marking aa diode DO-214 diode PDF

    1N5820

    Abstract: 1N5821 1N5822
    Text: 1N5820 - 1N5822 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop


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    1N5820 1N5822 DO-201AD DO-201AD UL94V-O MIL-STD-202, 1N5820 1N5821 1N5821 1N5822 PDF