Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DOUBLE HIGH-SPEED SWITCHING DIODE Search Results

    DOUBLE HIGH-SPEED SWITCHING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DOUBLE HIGH-SPEED SWITCHING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode a6

    Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
    Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


    Original     		PDF 1SS304 smd diode a6 smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor

    DIODE smd marking A4

    Abstract: smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4
    Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


    Original     		PDF 1SS303 DIODE smd marking A4 smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4

    bav74 Date Code

    Abstract: BAV74 DIODE package sot23 smd marking A1 sot23 marking code JTp SMD MARKING CODE jtp smd code marking LP smd diode BAV74 jtp sot23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV74 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAV74 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns


    Original     		PDF M3D088 BAV74 BAV74 O-236AB bav74 Date Code DIODE package sot23 smd marking A1 sot23 marking code JTp SMD MARKING CODE jtp smd code marking LP smd diode BAV74 jtp sot23

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 PMBD7100 High-speed double diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet High-speed double diode PMBD7100 PINNING FEATURES • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns


    Original     		PDF M3D088 PMBD7100 PMBD7100 R76/01/pp10

    NEC IR

    Abstract: 1SS303 NEC IR application note
    Text: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.


    Original     		PDF 1SS303 150ce NEC IR 1SS303 NEC IR application note

    NEC 2101

    Abstract: 1SS304 marking A6
    Text: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.


    Original     		PDF 1SS304 NEC 2101 1SS304 marking A6

    smd diode marking code L51

    Abstract: sot143 marking code JTp code l51 MAM059 BAS56 Double high-speed switching diode 134 B "360 SMD"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS56 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two highspeed switching diodes fabricated in


    Original     		PDF M3D070 BAS56 BAS56 OT143 smd diode marking code L51 sot143 marking code JTp code l51 MAM059 Double high-speed switching diode 134 B "360 SMD"

    KUSB50QN

    Abstract: QFN-10 1579P kusb
    Text: SEMICONDUCTOR KUSB50QN TECHNICAL DATA HIGH-SPEED USB2.0 DPDT SWITCH HIGH-SPEED 480Mbps USB2.0 DPDT SWITCH F DESCRIPTION E The KUSB50QN is a High-Speed(480Mbps) USB2.0 signal switch. Configured as a double-pole double-throw (DPDT) switch, it is optimized for switching between 2 Hi-Speed sources or a Hi-Speed(480Mbps) and


    Original     		PDF KUSB50QN 480Mbps) KUSB50QN 12Mbps) 720MHz) 250ps, 20Log QFN-10 1579P kusb

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KUSB50QN TECHNICAL DATA HIGH-SPEED USB2.0 DPDT SWITCH HIGH-SPEED 480Mbps USB2.0 DPDT SWITCH F DESCRIPTION E The KUSB50QN is a High-Speed(480Mbps) USB2.0 signal switch. Configured as a double-pole double-throw (DPDT) switch, it is optimized for switching between 2 Hi-Speed sources or a Hi-Speed(480Mbps) and


    Original     		PDF 480Mbps) KUSB50QN 12Mbps) 720MHz) 250ps, 3988ps 1242ps 71091ps

    BAW56LT1

    Abstract: No abstract text available
    Text: BAW56LT1 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.


    Original     		PDF BAW56LT1 450mA. OT-23 150oC BAW56LT1

    BAW56

    Abstract: No abstract text available
    Text: BAW56 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.


    Original     		PDF BAW56 450mA. OT-23 BAW56

    BAW56LT1

    Abstract: No abstract text available
    Text: BAW56LT1 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.


    Original     		PDF BAW56LT1 450mA. OT-23 BAW56LT1

    AB marking code smd diode

    Abstract: high voltage diode high voltage diodes marking CODE R SMD DIODE smd diode marking code BAW101
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 50 ns


    Original     		PDF M3D071 BAW101 BAW101 SCA75 613514/01/pp12 AB marking code smd diode high voltage diode high voltage diodes marking CODE R SMD DIODE smd diode marking code

    MC2858

    Abstract: SC-75A JEITASC-75A
    Text: 〈SMALL-SIGNAL DIODE〉 MC2858 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON CATHODE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ MC2858 is a super mini package plastic seal type silicon epitaxial type double diode,especially designed for high speed switching


    Original     		PDF MC2858 MC2858 SC-75A JEITASC-75A

    MC2856

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL DIODE〉 MC2856 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON ANODE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ MC2856 is a super mini package plastic seal type silicon epitaxial type double diode,especially designed for high speed switching


    Original     		PDF MC2856 MC2856

    MC2837

    Abstract: isahaya
    Text: 〈SMALL-SIGNAL DIODE〉 MC2837 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE SERIES TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ MC2837 is a super mini package plastic seal type silicon epitaxial type double diode,especially designed for high speed switching


    Original     		PDF MC2837 MC2837 isahaya

    IS2837

    Abstract: 1S2837
    Text: 1 S 28 37,1S 2838 High Speed Sw itching Silicon Epitaxial Double Diodes : Com m on Cathode • Low capacitance: Ct =1.1pF TYP. • High speed switching: t r r =3.0ns M AX. • Wide applications including switching, lim itter, clipper. • Double diode configuration assures economical use.


    OCR Scan     		PDF 1S2837, 1S2838 1S2837 S2838 IS2837 1S2837

    1SS123-A

    Abstract: NEC IR 1SS123 A CLIPPER CIRCUIT APPLICATIONS
    Text: DATA SHEET SILICON SWITCHING DIODE 1SS123 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : SERIES CONNECTED MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4 .0 pF M A X . in millimeters • High speed switching: t rr = 9 .0 ns M A X .


    OCR Scan     		PDF 1SS123 1SS123-A NEC IR 1SS123 A CLIPPER CIRCUIT APPLICATIONS

    MC921

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC921 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON CATHODE) DESCRIPTION Mitsubishi MC921 is a small outline plastic seal type silicon epitaxial type double OUTLINE DRAWING diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC921 MC921

    1S2835

    Abstract: 1S2836
    Text: 1S2835,1S2836 High Speed Switching Slicon Epitaxial Double Diodes : Common Anode PACKAGE DIMENSIONS in m illim eters inches ¿.3 o j • Wide applications including switching, lim itter, clipper. ( 0 096) tO 02) • Low capacitance: C, = 2.5pF TYP. • High speed switching: t rr = 4.0ns MAX.


    OCR Scan     		PDF 1S2835 1S2836 1S2836 1S2836, 1S2835,

    GENERAL SEMICONDUCTOR MARKING UJ

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING «m m type double diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC2836 MC2836 GENERAL SEMICONDUCTOR MARKING UJ

    MC2838

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2838 FOR HIGH SPEED SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE COMMON ANODE) DESCRIPTION Mitsubishi MC2838 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING Unitim m type double diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC2838 MC2838

    marking mitsubishi

    Abstract: MC2846 UJ DIODE MARKING
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2846 FOR HIGH SPEED SWITCHING APPLICATION _SILICON EPITAXIAL TYPE(COMMON ANODE) DESCRIPTION Mitsubishi MC2846 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING 2.1 type double diode,especially designed for high speed switching application.


    OCR Scan     		PDF MC2846 MC2846 marking mitsubishi UJ DIODE MARKING

    D1632

    Abstract: DC1054A 1S2835A3 1S2835 1S2836 NEC DIODES 1S2836A4
    Text: DATA SHEET NEC SILICON SWITCHING DIODES 1S2835,1 S2836 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : COMMON ANODE MINI MOLD FEATURES PACKAGE D IM ENSIO NS @ Low capacitance: Ct = 2.5 pF TYP. in m illim e te rs High speed switching: t rr = 4.0 ns M A X .


    OCR Scan     		PDF 1S2835 1S2836 D1632 DC1054A 1S2835A3 1S2836 NEC DIODES 1S2836A4