Untitled
Abstract: No abstract text available
Text: VISHAY SEMICONDUCTORS www.vishay.com Modules Application Note Mounting Instructions for Double INT-A-PAK Modules Vishay Semiconductor Italiana This application note introduces Vishay´s Double INT-A-PAK DIAP modules. It covers their key features and gives instructions for using heatsinks with the modules.
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09-Jul-13
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ST T4 3560
Abstract: T2 AL 250V 150Vt GA600HD25S
Text: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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GA600HD25S
ST T4 3560
T2 AL 250V
150Vt
GA600HD25S
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IGBT DRIVE 50V 300A
Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
Text: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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-50071B
GA600GD25S
Collect52-7105
IGBT DRIVE 50V 300A
LTA 902
GA600GD25S
AK 1262
igbt "internal thermistor" int-a-pak
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GA600GD25S
Abstract: CGC SWITCH OF IGBT 1000A 1000V
Text: PD - 50071A PRELIMINARY GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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0071A
GA600GD25S
GA600GD25S
CGC SWITCH
OF IGBT 1000A 1000V
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IRF 902
Abstract: GA600GD25S LTA 902 RG2 DIODE 50071 555 ic IC 555 RT25
Text: PD -50071 PRELIMINARY SINGLE SWITCH IGBT DOUBLE INT-A-PAK GA600GD25S StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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GA600GD25S
IRF 902
GA600GD25S
LTA 902
RG2 DIODE
50071
555 ic
IC 555
RT25
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GA400TD60U
Abstract: No abstract text available
Text: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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GA400TD60U
25imeters
GA400TD60U
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GA400TD25S
Abstract: No abstract text available
Text: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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-50051C
GA400TD25S
10kHz
Colle52-7105
GA400TD25S
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1515G
Abstract: GA250TD120U
Text: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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0054A
GA250TD120U
10kHz
1515G
GA250TD120U
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GA250TD120U
Abstract: ic 501
Text: PD - 5.054 PRELIMINARY GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA250TD120U
10kHz
GA250TD120U
ic 501
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Untitled
Abstract: No abstract text available
Text: Provisional Datasheet PD-9.1195 bitemational iôhRectifier IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc =300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses
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OCR Scan
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IRGDDN300K06
IRGRDN300K06
C-1012
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C451
Abstract: No abstract text available
Text: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"
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OCR Scan
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IRGDDN300M06
IRGRDN300M06
hiOutline13
C-452
C451
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IRGDDN400M06
Abstract: c454 INTAPAK package mosfet 400a
Text: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses
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OCR Scan
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IRGDDN400M06
IRGRDN400M06
Outline13
C-454
GG2Q244
c454
INTAPAK package
mosfet 400a
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IRGDDN600K06
Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Text: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses
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IRGDDN600K06
1RGRDN600K06
C-1016
mosfet 600V 600A circuit
power mosfet 600v 600A
lm 2604
vqe 208 e
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DOUBLE INT-A-PAK Package
Abstract: No abstract text available
Text: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"
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DDN600M06
RDN600M06
Outline13
C-456
DOUBLE INT-A-PAK Package
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mosfet ir 840
Abstract: irgddn400k06 OF IGBT 300A 500V 400A mosfet
Text: International g ! Rectifier Provisional Data Sheet PD-9.1196 IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE = 600V lc = 400A • Rugged Design .Simple gate-drive •Switching-Loss Rating includes all "tail" losses
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IRGDDN400K06
IRGRDN400K06
C-1014
mosfet ir 840
OF IGBT 300A 500V
400A mosfet
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C1019
Abstract: 200a 300v mosfet
Text: International [xôrIRectifier Provisional Data Sheet PD -9.1198 IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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OCR Scan
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IRGTDN200K06
C-1020
C1019
200a 300v mosfet
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transistors c458
Abstract: btm 110 module C458
Text: International khlRectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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IRGTDN150M06
S5452
GG2024fl
C-458
transistors c458
btm 110 module
C458
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TR C458
Abstract: transistors c458 C458
Text: International ^R ectifier Provisional Data Sheet PD-9.1177 IRGTDN150M06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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OCR Scan
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IRGTDN150M06
C-458
TR C458
transistors c458
C458
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C82 diode
Abstract: C81 diode
Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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10kHz
GA150TD120U
150TD
C82 diode
C81 diode
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OF IGBT 300A 500V
Abstract: irgddn300m06 IGBT tail time C452 C451
Text: International Rectifier Provisional Data Sheet PD-9.1174 RG N300M06 RG RDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT . Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail“ losses • Short circuit rated
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OCR Scan
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N300M06
RDN300M06
Outline13
C-452
SS452
002DSME
OF IGBT 300A 500V
irgddn300m06
IGBT tail time
C452
C451
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IRGDDN400M06
Abstract: 400V 400A mosfet
Text: International iël] Rectifier Provisional Data Sheet PD -9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK IRGDD. Low conduction loss IGBT IRGRD. VCE = 600V A • Rugged Design • Sim ple gate-drive •Sw itching-Loss Rating includes all “tail"
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IRGDDN400M06
IRGRDN400M06
Outline13
400V 400A mosfet
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Untitled
Abstract: No abstract text available
Text: International l i i Rectifier PD-9.1171 IRGDDN300M12 IRGRDN300M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 300A • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated
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OCR Scan
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IRGDDN300M12
IRGRDN300M12
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK PD'5051 G A 400TD 25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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400TD
10kHz
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200a 300v mosfet
Abstract: No abstract text available
Text: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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OCR Scan
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IRGTDN200K06
C-460
GD2025D
200a 300v mosfet
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