N-Channel Depletion-Mode MOSFET high voltage
Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
Text: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.
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LND150
LND150N3
O-243AA*
LND150N8
LND150ND
OT-89.
N-Channel Depletion-Mode MOSFET high voltage
pc 817 A - mosfet gate drive
mosfet to-92 n-channel 20 volt
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D0X49T
Abstract: Latching relay 2 pole DOX-184T dox5 OHMITE dos relay
Text: OHMITE Relays*'Power/Power Latching Manufacturing Company DO Model Stock Part Numbers1 M ade-to-order m odels available. Contact nearest Ohmite Sales Office. Unenclosed 'm i" 4PDT 6 VAC 6 VAC 2 33 233 3PDT 4PDT 12 VAC 12 VAC 1 28 1 28 14 14 D0X49T DOX-184T
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DOX-50T
D0X49T
DOX-184T
D0X-181T
DOX-185T
DOX-226T
DOX-227T
DOX-228T
UX033T"
X-130T
Latching relay 2 pole
dox5
OHMITE dos relay
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de45
Abstract: dox 10 va99
Text: Qd_k[ghWb RebiW][ l_i^ >j_bi1_d =cfb_\_[g.P[gc_dWb inf[/ P[gc_dWb inf[ f^eie[b[Yig_Y h[dheg \eg bed] Z_hiWdY[ .=/ ?ejdi[g rB[Wijg[h v9fZ]e*Z_ dV_dZeZgZej RU[fdeVc .>/ P_c[g vIZ^Vc 7 ED ;V]Rj~ E= ;V]Rj~ E_V*dY`e ;V]Rj vDFD,FDF `aV_ T`]]VTe`c `feafe{;: a`hVc ejaV|
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IO16/
IO18/
IO17/
de45
dox 10
va99
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Untitled
Abstract: No abstract text available
Text: SD718CF256 256K x 18 CMOS Synchronous Burst Flow-Through SRAM Features Functional Description • +3.3V+10%, -5% Power Supply The SD718CF256 is a high speed 4M, 262,144 x 18 cell, synchronous burst CMOS Static RAM organized as 256K words by 18 bits that supports high performances
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SD718CF256
SD718CF256
5ns/10ns/11ns
SD718CF256TQ-7
SD718CF256TQ-8
100-pin
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G38-87
Abstract: No abstract text available
Text: [Advance Information] SD732CF64 64K x 32 CMOS Synchronous Burst Flow-Through SRAM Features Functional Description • +3.3V+10%, -5% Power Supply The SD732C64 is a high speed 2M, 65,536 x 32 cell, synchronous burst Flow-Through CMOS Static RAM organized as 64K words by 32 bits that supports high
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SD732CF64
SD732C64
10s/12ns/15ns
100-pin
SD732CF64Q-5
SD732CF64Q-6
SD732CF64Q-7
G38-87
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G38-87
Abstract: SD732C64TQ-5
Text: [Advance Information] SD732C64 64K x 32 CMOS Synchronous Burst Pipeline SRAM Features Functional Description • +3.3V+10%, -5% Power Supply The SD732C64 is a high speed 2M, 65,536 x 32 cell, synchronous burst Pipeline CMOS Static RAM organized as 64K words by 32 bits that supports high performances
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SD732C64
SD732C64
10s/12ns/15ns
100-pin
SD732C64Q-5
SD732C64Q-6
SD732C64Q-7
G38-87
SD732C64TQ-5
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Untitled
Abstract: No abstract text available
Text: SD718C256 256K x 18 CMOS Synchronous Burst Pipline SRAM Features Functional Description • +3.3V+10%, -5% Power Supply The SD718C256 is a high speed 4M, 262,144 x 18 cell, synchronous burst pipelined CMOS Static RAM organized as 256K words by 18 bits that supports high performances secondary cache applications of the PentiumTM
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SD718C256
SD718C256
SD718C256TQ-7
SD718C256TQ-8
100-pin
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bsim3 0.18 micron parameters
Abstract: bsim3 model ESSDERC-98
Text: Impact of Process Scaling on 1/f Noise in Advanced CMOS Technologies MJ. Knitel, P.H. Woerlee, A.J. Schölten, and A.T.A. Zegers-Van Duijnhoven Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands phone: +31-40-2742723; fax: + 31-40-2743390; e-mail: andries.scholten@philips.com
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464-IEDM
bsim3 0.18 micron parameters
bsim3 model
ESSDERC-98
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F100155
Abstract: F100355 qd223 966-03
Text: 100155 National SLA Semiconductor F100155 Quad Multiplexer/Latch General Description T h e F 1 0 01 55 co ntains four transparent latches, e ach o l w hich can a cc e p t and store data from two sources. W hen both E n a b le E„ inputs are LO W , the data that a p p e a rs at
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F100155
TL/F/9860-7
F100355
qd223
966-03
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Untitled
Abstract: No abstract text available
Text: 8T58-I.X L P R ELIM IN A R Y S P E C IF IC A T IO N DESCRIPTION APPLICATIONS The Bus E xpander is s p e c ific a lly designed to increase the I/O c a p a b ility o f 8X300 sys tem s pre vio u sly lim ite d by fa n o u t c o n s id e r ations. The bus exp ande r serves as a bu ffer
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8T58-I
8X300
8X300.
1N916
1N3064.
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TLE8110
Abstract: DRACL dox 10 REGISTER31 app abstract
Text: TLE8110EE SPI and Daisy-Chain Application Note This document is subject to changes without further notice to customer Rev.0.2, 2011-06-14 Automotive Power TLE8110EE SPI and Daisy-Chain CONFIDENTIAL Abstract Note: The following information is given as a hint for the usage of the device only and shall not be regarded as a
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TLE8110EE
TLE8110EE
TLE8110
DRACL
dox 10
REGISTER31
app abstract
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N 7337
Abstract: No abstract text available
Text: JL £ . DO NOT SCALE DIMENSIONS IN MM. 4 .5 S. C 3 4 5 7 4 8 C.A.D. FUE CODE REF —SECTION li WI RE RANGE: .0.75 INSULATION THIN TO RANGE; Sfil Still •Vi PsÄiä m i ffipSääS Ó!M p i WHÉÌ 2. 00 1. 65 Y-Y AJ'^' E TO B PRODUCT SPEC. 108-3069 APPL I CA TI ON SPEC.
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C345148
N 7337
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mil-std-883 2015
Abstract: mil-std-883* 2015 LV500 BOX BUILD FABRICATION PROCESS INCOMING RAW MATERIAL INSPECTION method for Total organic carbon analyzer INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION report
Text: Littelfuse Quality and Reliability 11 Transient Voltage Suppression PAGE Littelfuse Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-3
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Untitled
Abstract: No abstract text available
Text: F100155 Quad Multiplexer/Latch FAIRCHILD A S chlum berger C om pany F100K E C L P ro d u c t C onnection Diagram s Description T h e F100155 c o n ta in s fo u r tra n s p a re n t latch es, ea ch o f w h ic h can a c c e p t and s to re da ta fro m tw o sou rces.
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F100155
F100K
F100155
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em6420
Abstract: EM6819 sensor map IC 4096 EM-64201 EM MICROELECTRONIC-MARIN EM6819 Capacitive touch waterproof ir touch screen TOUCH SCREEN MCU 110B
Text: EM MICROELECTRONIC - MARIN SA EM6420 Ultra Low Power Capacitive Touch Sensor Interface IC Description Availability Naked die The EM6420 is an ultra low power Touch Sensor Interface IC able to scan sequentially up to 16 capacitive sensors. The device parameters number of used sensors, sensors
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EM6420
EM6420
MLF32-36-40
6420-DS
10-Jun-10
EM6819
sensor map
IC 4096
EM-64201
EM MICROELECTRONIC-MARIN EM6819
Capacitive touch waterproof
ir touch screen
TOUCH SCREEN MCU
110B
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Untitled
Abstract: No abstract text available
Text: * DESCRIPTION FEATURES • ■ ■ ■ ■ 725ps max. D to output Differential outputs Split select architecture ESD protection of 2000V Fully compatible with Industry standard 10KH, 100K ECL levels ■ Extended 100E V ee range of -4.2V to -5.46V ■ Internal 75K£i Input pulldown resistors
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725ps
MC10E/100E171
SY10E171
SY100E171
multiplexers650
J28-1
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Untitled
Abstract: No abstract text available
Text: * 3-BIT 4:1 MUX-LATCH SYNERGY SY10E156 SY100E156 SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ ■ dOOps max. D to output Extended 100E V e e range of -4.2V to -5.5V 800ps max. LEN to output Differential outputs Asynchronous Master Reset Dual latch enables
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SY10E156
SY100E156
800ps
MC10E/100E156
J28-1
SY100E156JCTR
SY100E156JC
SY10E156JCTR
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r2x smd
Abstract: inverter 618
Text: XFWI321618 SERIES INDUCTORS * TAPE AND REEL PACKAGING 2000 PCS PER 7 ” REEL * FOR D C /D C * TEMP. CONVERTERS, RISE; FOR HIGH VOLUME D C /A C 1 5*C TYPICAL ABOVE INVERTERS, 60 °C MANUFACTURING VRM APPLICATIONS AMBIENT S ch e m a tic : Pad Layout INDUCTANCE
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XFWI321618
XFWI321
r2x smd
inverter 618
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CA3054
Abstract: h85c
Text: 093 tfff yJ A O'S V^O I = 3I A OZ V ^ O l^ 3/ OIO<dB)y^ A OZ V^OT = °J oaoinayy^ y u io • I = =>1 S1 A 001 Vu 0 = 3I 6 ‘0 A ‘A O I ^ ^ /l 030 oeDf V ^ O I ‘A00'C = *V1 S8'0 VUJO e ‘AO'£ = 3yl 8 ‘0 V ^O ' l ¿ ‘0 ‘AO ' £ = n A A V *0S ‘AO'S = " 4
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CA3054
120MHzÂ
500mA
CA3054
10//A
h85c
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IC M62446afp pin diagram
Abstract: DB4 0531 M62446FP M62446AFP M62446 tone control digital
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCE! OR DISCLOSED WITHOUT THE WRITTEN APPROVAL DP BEL FUSE INC. RoHS 2002/93/EC SCHEMATIC E LEC TRIC AL TURNS C H A R A C T E R IS T IC S R J4 5 @ 2 5 °C
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2002/93/EC
65MHz
65MHz
100MHz
100MHz
125MHz
20LDG
fX80MHz)
0200-9999-P2
0816-1X1T-BZ-0
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RFD24
Abstract: No abstract text available
Text: F100194 Quint Duplex Bus Driver T ransceiver F100K ECL Product Description The F100194 is a quint line driver/receiver capable of transmitting and receiving full duplex digital signals on a high-speed bus line. Because of the current source line driver, two independent messages may be transmitted
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F100194
F100K
F100194
RFD24
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M62446
Abstract: No abstract text available
Text: ^ \ 0nC^a^ e' MITSUBISHI SOUND PROCESSORS M62446FP SO«' ?a 6CH ELECTRIC VOLUME WITH TONE CONTROL d e s c r ip t io n ^ The M62446FP is 6 channels electric volume controlled 3-wire serial data. The 1C is suitable for use in home-use audio systems and TV sets.
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M62446FP
M62446FP
-79dB
16-bit
42P2R
24Kii
015pF
005bl32
M62446
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AS-Interface circuit diagram
Abstract: AS-Interface a2si ZMD AG
Text: A2SI-E Advanced AS-Interface IC Features Description • • • A²SI-E is a monolithic CMOS integrated circuit certified for AS-i Actuator Sensor-interface networks. AS-i networks are intended for industrial automation. • • • • • • • AS-i Complete Specification V2.11 compliant
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