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DPAK Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK6R9P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
TK5R1P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK

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Samtec Inc QTH-020-02-L-D-DP-A-K-TR CONN DIFF ARRAY PLG 40P SMD GOLD Free Sample
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DigiKey	QTH-020-02-L-D-DP-A-K-TR	Cut Tape	2,274		1	1 $8.63 10 $8.177 100 $6.2936 1000 $6.2936 10000 $6.2936	Buy Now
	QTH-020-02-L-D-DP-A-K-TR	Reel	2,200		275	1 - 10 - 100 - 1000 $5.36947 10000 $6.29356	Buy Now
Samtec Inc QSH-040-01-C-D-DP-A-K CONN DIFF ARRAY RCP 80P SMD GOLD Free Sample
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DigiKey	QSH-040-01-C-D-DP-A-K	Tray	402		64	1 - 10 - 100 $16.45 1000 $9.09915 10000 $9.09915	Buy Now
Mouser Electronics	QSH-040-01-C-D-DP-A-K		95			1 $16.45 10 $16.45 100 $16.45 1000 $9.08 10000 $9.08	Buy Now
Samtec Inc QSH-020-01-L-D-DP-A-K CONN DIFF ARRAY RCP 40P SMD GOLD Free Sample
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DigiKey	QSH-020-01-L-D-DP-A-K	Tray	351		96	1 - 10 - 100 $8.69 1000 $4.81 10000 $4.81	Buy Now
Mouser Electronics	QSH-020-01-L-D-DP-A-K		158			1 $8.69 10 $8.69 100 $8.69 1000 $6.1 10000 $4.81	Buy Now
Newark	QSH-020-01-L-D-DP-A-K	Bulk	55		1	1 $6.42 10 $5.82 100 $4.85 1000 $3.88 10000 $3.88	Buy Now
Powell Electronics	QSH-020-01-L-D-DP-A-K		190		96	1 - 10 - 100 $8.69 1000 $4.81 10000 $3.52	Buy Now
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Avnet Abacus	QSH-020-01-L-D-DP-A-K			3 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc QTE-028-01-H-D-DP-A-K-TR CONN DIFF ARRAY PLG 56P SMD GOLD Free Sample
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DigiKey	QTE-028-01-H-D-DP-A-K-TR	Digi-Reel	275		1	1 $19.16 10 $18.13 100 $13.05 1000 $13.05 10000 $13.05	Buy Now
	QTE-028-01-H-D-DP-A-K-TR	Cut Tape	275		1	1 $19.16 10 $18.13 100 $13.05 1000 $13.05 10000 $13.05	Buy Now
Avnet Abacus	QTE-028-01-H-D-DP-A-K-TR			8 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc HSEC8-120-01-L-DP-A-K CONN PCI EXP FMALE 40POS 0.031 Free Sample
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DigiKey	HSEC8-120-01-L-DP-A-K	Cut Tape	248		1	1 $10.63 10 $8.135 100 $6.3435 1000 $6.3435 10000 $6.3435	Buy Now

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DPAK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DPAK		STMicroelectronics	DPAK - ASD & DISCRETES - TOURS		Original	PDF

DPAK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
POWER MOSFET 4600 Abstract: 1A 700V MOSFET Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.	Original	TSM2N70 O-220 O-251 O-252 TSM2N70 POWER MOSFET 4600 1A 700V MOSFET	PDF
TSM2NB60 Abstract: mosfet 600V 2A Text: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced	Original	TSM2NB60 O-251 O-252 TSM2NB60CH 75pcs mosfet 600V 2A	PDF
TSC5304EDCP Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251 Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation	Original	TSC5304ED O-251 O-252 TSC5304EDCP TSC5304EDCH O-252 75pcs marking E11 DIODE power transistor Ic 4A NPN to - 251	PDF
marking code C12 Abstract: No abstract text available Text: TS1085 3A Low Dropout Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description TS1085 are high performance positive voltage regulators are designed for use in applications requiring low	Original	TS1085 O-220 O-263 O-252 TS1085 marking code C12	PDF
A12 diode Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This	Original	TSM3N90 O-220 ITO-220 O-251 O-252 TSM3N90 TSM3N90CH TSM3N90CP TSM3N90CZ O-251 A12 diode MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v	PDF
TSM10N06 Abstract: No abstract text available Text: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	TSM10N06 O-252 TSM10N06CP TSM10N06	PDF
7n52 Abstract: 1525P Text: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3	Original	STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 O-220FP O-220 STB7N52K3 STF7N52K3 7n52 1525P	PDF
Untitled Abstract: No abstract text available Text: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR DPAK, TO-252, TO-251 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 40 20 000 200 C + N2 FAIL PERCENTAGE 0.00 HAST 1691 169 100 130 C, 85 % RH	Original	O-252, O-251 M2003 08-May-12	PDF
VND1NV04TR-E Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET Text: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation	Original	VND1NV04 VNN1NV04 VNS1NV04 O-252 OT-223 VND1NV04, VNN1NV04, VNS1NV04 VND1NV04TR-E Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET	PDF
A 673 C2 transistor Abstract: tip41 369D-01 Text: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS	Original	MJD41C, NJVMJD41CT4G MJD42C, NJVMJD42CT4G, NJVMJD42CRLG TIP41 TIP42 AEC-Q101 MJD41C/D A 673 C2 transistor 369D-01	PDF
SMD L4 Regulator SOT-223 Abstract: smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG Text: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% or ±4.0% depending on	Original	NCV4274, NCV4274A NCV4274 OT-223 NCV4274/D SMD L4 Regulator SOT-223 smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG	PDF
T20P06LG Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg Text: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant	Original	NTD20P06L, NTDV20P06L NTD20P06L/D T20P06LG P06LG T20 P06LG 20p06 marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg	PDF
2N62K3 Abstract: STD2N62K3 STP2N62K3 Text: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3	Original	STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 O-220FP, O-220 STB2N62K3 STD2N62K3 STF2N62K3 2N62K3 STP2N62K3	PDF
NJVMJD47T4G Abstract: No abstract text available Text: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves	Original	MJD47, NJVMJD47T4G, MJD50 TIP47, TIP50 AEC-Q101 NJVMJD47T MJD47/D NJVMJD47T4G	PDF

b01619 Abstract: D6NM60N Text: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N	Original	STx6NM60N O-220, O-220FP, STB6NM60N STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N O-220 b01619 D6NM60N	PDF
NJVMJD31CT4G Abstract: NJVMJD31T4G Text: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com	Original	MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G TIP31 NJVMJD31CT4G NJVMJD31T4G	PDF
STP13NM60 Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430 Text: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N	Original	STx13NM60N O-220FP, O-220, O-247 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N STP13NM60 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 MJ430	PDF
L046 Abstract: No abstract text available Text: LP8345 LP8345 Low Dropout, Low IQ, 500mA CMOS Linear Regulator Literature Number: SNVS229E October 19, 2011 LP8345 Low Dropout, Low IQ, 500mA CMOS Linear Regulator General Description Features The LP8345 low-dropout CMOS linear regulator are available in 5V, 3.3V, 2.5V, 1.8V or adjustable output versions. Packaged in our 6ld LLP package and 3ld DPAK they can deliver	Original	LP8345 LP8345 500mA SNVS229E L046	PDF
g18n40 Abstract: NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection Text: NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD18N40CLB, NGD18N40ACLB NGD18N40CLB/D g18n40 NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection	PDF
MJD350t4g Abstract: No abstract text available Text: MJD340, NJVMJD340T4G NPN , MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.	Original	MJD340, NJVMJD340T4G MJD350, NJVMJD350T4G MJE340 MJE350 AEC-Q101 MJD340/D MJD350t4g	PDF
N3LG Abstract: SPICE QT 60 CIRCUIT DIAGRAMS 20N3L MTD20N03L NVD20N03L27 20n3 20N3LG Text: NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N−Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.	Original	NTD20N03L27, NVD20N03L27 NTD20N03L27/D N3LG SPICE QT 60 CIRCUIT DIAGRAMS 20N3L MTD20N03L 20n3 20N3LG	PDF
BYQ28 Abstract: BYQ28E BYQ28E-200 BYQ28EB BYQ28ED-200 diode BYq28 sym084 Text: BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 TO-220AB and a SOT428 (DPAK) plastic package.	Original	BYQ28 O-220AB) OT428 BYQ28E BYQ28E-200 BYQ28EB BYQ28ED-200 diode BYq28 sym084	PDF
BYV25D Abstract: BYV25D-600 Text: BYV25D-600 Rectifier diode, ultrafast Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description Ultrafast, epitaxial rectifier diode in a SOT428 DPAK surface-mountable plastic package. 1.2 Features • Fast switching ■ Soft recovery characteristic	Original	BYV25D-600 OT428 BYV25D-600 BYV25D	PDF
l078b Abstract: marking l078b 4925 B transistor LP8340CDT-5.0 LP8340CLD-ADJ LP8340 LP8340C LP8340CLDX-ADJ LP8340I L082 Text: LP8340 Low Dropout, Low IQ, 1.0A CMOS Linear Regulator General Description Features The LP8340 low-dropout CMOS linear regulator is available in 5V, 3.3V, 2.5V, 1.8V and adjustable output versions. Packaged in the 6ld LLP package and 3ld DPAK. The LP8340 can	Original	LP8340 LP8340 420mV 540mV 670mV 680mV 800mA l078b marking l078b 4925 B transistor LP8340CDT-5.0 LP8340CLD-ADJ LP8340C LP8340CLDX-ADJ LP8340I L082	PDF

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DPAK Search Results

DPAK Result Highlights (2)

DPAK Price and Stock

Samtec Inc QTH-020-02-L-D-DP-A-K-TR

Samtec Inc QSH-040-01-C-D-DP-A-K

Samtec Inc QSH-020-01-L-D-DP-A-K

Samtec Inc QTE-028-01-H-D-DP-A-K-TR

Samtec Inc HSEC8-120-01-L-DP-A-K

DPAK Datasheets (1)

DPAK Datasheets Context Search

POWER MOSFET 4600

TSM2NB60

TSC5304EDCP

marking code C12

A12 diode

TSM10N06

7n52

Untitled

VND1NV04TR-E

A 673 C2 transistor

SMD L4 Regulator SOT-223

T20P06LG

2N62K3

NJVMJD47T4G

b01619

NJVMJD31CT4G

STP13NM60

L046

g18n40

MJD350t4g

N3LG

BYQ28

BYV25D

l078b