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    DPAK MARKING CODE 300 Search Results

    DPAK MARKING CODE 300 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy

    DPAK MARKING CODE 300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    st morocco tip122

    Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
    Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube


    Original     		PDF MJD122-1 MJD122T4 MJD127-1 MJD127T4 MJD122-1 MJD127-1 MJD122 st morocco tip122 Darlington pair IC schematic morocco tip122 MJD122 MJD122T4 MJD127 MJD127T4 TIP122

    chn 935

    Abstract: ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4
    Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube


    Original     		PDF MJD122-1 MJD122T4 MJD127-1 MJD127T4 MJD122-1 MJD127-1 MJD122 chn 935 ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4

    transistor D888

    Abstract: D888 STD888 st d888
    Text: STD888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ Ordering Code Marking STD888 D888 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SURFACE-MOUNTING DPAK TO-252


    Original     		PDF STD888 O-252) O-252 transistor D888 D888 STD888 st d888

    DPG10I300PA

    Abstract: No abstract text available
    Text: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:


    Original     		PDF 60747and DPG10I300PA

    DPG10I300PA

    Abstract: No abstract text available
    Text: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:


    Original     		PDF DPG10IM300UC O-252 60747and 20131125a DPG10I300PA

    DPG10I300PA

    Abstract: dpak DIODE ANODE COMMON
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF 60747and 20090323a DPG10I300PA dpak DIODE ANODE COMMON

    DPG10I300PA

    Abstract: diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF 60747and 20090323a DPG10I300PA diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON

    03866

    Abstract: 07062
    Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:


    Original     		PDF 60747and 20090323a 03866 07062

    Untitled

    Abstract: No abstract text available
    Text: MURD330 SWITCHMODEt Power Rectifier DPAK Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • http://onsemi.com ULTRAFAST RECTIFIER 3 A, 300 V


    Original     		PDF MURD330 MURD330

    Untitled

    Abstract: No abstract text available
    Text: STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STD10NF30 300 V 0.33 Ω 10 A • Designed for automotive applications and


    Original     		PDF STD10NF30 AEC-Q101 DocID026136

    marking 27550

    Abstract: 27550G 27533G 27525G 27533 Regulator marking code A3 sot223 27550 MC33275
    Text: MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, and DPAK surface mount packages. These devices feature a very low quiescent current and are capable of


    Original     		PDF MC33275, NCV33275 MC33275 OT-223, MC33275/D marking 27550 27550G 27533G 27525G 27533 Regulator marking code A3 sot223 27550

    Untitled

    Abstract: No abstract text available
    Text: SKFM640C-D FM120-M+ WILLAS THRU THRU 6.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM6200C-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF OD-123+ SKFM64 FM120-M SKFM62 00C-D FM1200-M OD-123H FM120-MH FM130-MH FM140-MH

    Untitled

    Abstract: No abstract text available
    Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N900 ITO-220 O-251 O-252 TSM70N900CI 50pcs TSM70N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N600 ITO-220 O-251 O-252 TSM70N600CI 50pcs TSM70N600CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N380 ITO-220 O-251 O-252 TSM70N380CI 50pcs TSM70N380CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● ● ● ●


    Original     		PDF TSM70N900 ITO-220 O-251 O-252 TSM70N900CI 50pcs TSM70N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM60N900 ITO-220 O-251 O-252 TSM60N900CI 50pcs TSM60N900CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology


    Original     		PDF TSM70N600 ITO-220 O-251 O-252 TSM70N600CI 50pcs TSM70N600CH 75pcs

    Untitled

    Abstract: No abstract text available
    Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBD620-G CDBD6100-G CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G SK660Y

    51y diode

    Abstract: SGFM52Y-D-TH
    Text: WILLAS FM120-M+ SGFM51Y-D THRU THRU 5.0A SUFRACE MOUNT SUPER FAST RECTIFIERS - 50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DPAK PACKAGE FM1200-M+ SGFM58Y-D Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		PDF 0-600V OD-123+ FM120-M FM1200-M 58Y-D OD-123H FM120-MH FM130-MH FM140-MH FM150-MH 51y diode SGFM52Y-D-TH

    CDBD620-G

    Abstract: CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G
    Text: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBD620-G CDBD6100-G mQW-BB032 CDBD620-G SK620Y CDBD640-G SK640Y CDBD650-G SK650Y CDBD660-G CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G

    k72 sot-23

    Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
    Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS


    Original     		PDF 2N7002DW OT-363 2N7002T 2SK3019 OT-523 2N7002KW 2N7002W 2SK3018 O-251 k72 sot-23 sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303

    TSM60N380CP

    Abstract: TSM60N380CH TSM60N380CI
    Text: TSM60N380 600V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.38 Ω Qg 20.5 nC TO-252 (DPAK) Block Diagram Features ● ● Super-Junction technology


    Original     		PDF TSM60N380 ITO-220 O-251 O-252 TSM60N380CI 50pcs TSM60N380CH 75pcs TSM60N380CP

    Untitled

    Abstract: No abstract text available
    Text: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● ● Super-Junction technology


    Original     		PDF TSM70N380 ITO-220 O-251 O-252 TSM70N380CI 50pcs TSM70N380CH 75pcs