AS8S512K3
Abstract: No abstract text available
Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface
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AS8S2M32PEC
2Mx32
M0-47AE
AS8S2M32
AS8S2M32PEC
AS8S512K3
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Untitled
Abstract: No abstract text available
Text: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units
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IBM13M64734CCA
168-Pin
64Mx72
66/100MHz
PC100
09K3884
F38744
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Untitled
Abstract: No abstract text available
Text: . IBM13M16734JCA 16M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: Device Latency Clock Frequency Clock Access Time -260 -360 -360 Units 2 2
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IBM13M16734JCA
168-Pin
16Mx72
66/100MHz
PC100
06K2880
H01193
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16Mx8
Abstract: pc133 SDRAM DIMM W9D332647LA-333 079R 32X64 32X64 144 pin
Text: REVISIONS DATE REV I. DESCRIPTION: DESCRIPTION ZONE 6/29/01 LUISA T Ÿ W9D332647LA-333 is a 32Mx64 industry standard 168-pin PC-133 SDRAM DIMM Ÿ Manufactured with 16 16Mx8 400-mil TSOPII-54 PC-133 Synchronous DRAM devices of 12-row, 10-column, 4-bank addressing.
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W9D332647LA-333
32Mx64
168-pin
PC-133
16Mx8
400-mil
TSOPII-54
12-row,
10-column,
pc133 SDRAM DIMM
079R
32X64
32X64 144 pin
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Memory
Abstract: FTS8L32512V
Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.
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FTS8L32512V
512Kx32
FTS8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
FTI8K32512V
Memory
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MH64S64APFH-5
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S64APFH-5,-5L,-6,-6L,-7,-7L 4294967296-BIT 67108864 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH64S64APFH is 67108864 - word by 64-bit Synchronous DRAM module. This consists of
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MH64S64APFH-5
4294967296-BIT
64-BIT
MH64S64APFH
64-bit
32Mx8
MIT-DS-0392-0
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MH32D64AKQJ-75
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32D64AKQJ-75,-10 2,147,483,684-BIT 33,554,432-WORD BY 64-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH32D64AKQJ is 33554432 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.
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MH32D64AKQJ-75
684-BIT
432-WORD
64-BIT)
MH32D64AKQJ
64-bit
133MHz.
100MHz
133MHz
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MH32S72APHB
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72APHB -5,-6,-7 2,415,919,104-BIT 33,554,432 - WORD BY 72-BIT Synchronous DRAM DESCRIPTION The MH32S72APHB is 33554432 - word by 72-bit Synchronous DRAM module. This consists of
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MH32S72APHB
104-BIT
72-BIT
72-bit
16Mx8
94pin
10pin
95pin
85pin
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ya 741
Abstract: sta 741 a
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S64APHB -5,-6,-7 1,073,741,824-BIT 16,777,216 - WORD BY 64-BIT Synchronous DRAM DESCRIPTION The MH16S64APHB is 16777216 - word by 64-bit Synchronous DRAM module. This consists of eight
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MH16S64APHB
824-BIT
64-BIT
64-bit
16Mx8
94pin
10pin
95pin
85pin
ya 741
sta 741 a
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CL333
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -5, -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six
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MH64S72AWJA
208-BIT
864-WORD
72-BIT
10pin
95pin
11pin
124pin
CL333
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128*64
Abstract: transistor GW 93 H GW 94 H
Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address
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EDI2KG464128V
4x128Kx64,
4x128Kx64
EDI2KG64128VxxD
01581USA
EDI2KG464128V
128*64
transistor GW 93 H
GW 94 H
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LM2576 step up converter
Abstract: LM2576-ADJ*. Circuit Diagram using this IC LM2576-ADJ LM2576 BOOST CONVERTER 671 27000 lm2576 charge LM2576-3.3 PE108 lm2574 constant current LM2576
Text: Order this document by LM2576/D LM2576 Advance Information Easy Switcher 3.0 A Step-Down Voltage Regulator The LM2576 series of regulators are monolithic integrated circuits ideally suited for easy and convenient design of a step–down switching regulator
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LM2576/D
LM2576
LM2576
LM2576 step up converter
LM2576-ADJ*. Circuit Diagram using this IC
LM2576-ADJ
LM2576 BOOST CONVERTER
671 27000
lm2576 charge
LM2576-3.3
PE108
lm2574 constant current
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MH64S64APFH-6
Abstract: mitsubishi power Modules
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S64APFH-6,-6L,-7,-7L 4294967296-BIT 67108864 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH64S64APFH is 67108864 - word by 64-bit Synchronous DRAM module. This consists of
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MH64S64APFH-6
4294967296-BIT
64-BIT
MH64S64APFH
64-bit
32Mx8
MIT-DS-0392-0
mitsubishi power Modules
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Untitled
Abstract: No abstract text available
Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M64K-XPBX
W3J512M64K-XLBX
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Untitled
Abstract: No abstract text available
Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M64G-XPBX
W3J512M64G-XLBX
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Untitled
Abstract: No abstract text available
Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M64G-XPBX
W3J512M64G-XLBX
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EDI2AG272129V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2AG272129V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst
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EDI2AG272129V
2x128Kx72,
2x128Kx72
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
s129V
EDI2AG272129V85D1*
EDI2AG272129V9D1*
EDI2AG272129V10D1
EDI2AG272129V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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Untitled
Abstract: No abstract text available
Text: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,
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EDI2GG418128V
4x128Kx18,
4x128Kx18
EDI2GG418128VxxD2
4x128Kx64.
14mmx20mm
EDI2GG418128V95D*
EDI2GG418128V10D*
4x128Kx18
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DIMM_200
Abstract: No abstract text available
Text: EDI2GG46464V 4x64Kx64, 3.3V Synchronous SRAM CARD EDGE DIMM FEATURES • 4x64Kx64 Synchronous The EDI2GG46464VxxD is a Synchronous SRAM, 60 position Dual Key; Card Edge DIMM 120 contacts Module, organized as 4x64Kx64. The Module contains eight (8) Synchronous Burst
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EDI2GG46464V
4x64Kx64,
4x64Kx64
EDI2GG46464VxxD
4x64Kx64.
14mmx20mm
EDI2GG46464V95D*
EDI2GG46464V10D
EDI2GG46464V11D
EDI2GG46464V12D
DIMM_200
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EDI2CG472128V
Abstract: No abstract text available
Text: EDI2CG472128V 4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module contains eight (8)
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EDI2CG472128V
4x128Kx72,
4x128Kx72
EDI2CG472128VxxD2
4x128Kx72.
14mmx20mm
devic168
EDI2CG472128V85D2*
EDI2CG472128V10D2*
EDI2CG472128V12D2
EDI2CG472128V
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.
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THMY644071EG-10
304-WORD
64-BIT
THMY644071EG
TC59S6416FT
THMY644071
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r2a3
Abstract: r1a10 M1367 M4589
Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.
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THMY728010BEG-80L
THMY728010BEG
608-word
72-bit
TC59S6408BFTL
72-bit
r2a3
r1a10
M1367
M4589
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AN 7580
Abstract: TC59WM815BFT
Text: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.
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THMD12E11
216-WORD
72-BIT
THMD12E11B
TC59WM815BFT
72-bit
AN 7580
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Untitled
Abstract: No abstract text available
Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM
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EDI8F32123C
128Kx32
EDI8F32123C
128Kx
128Kx8
EDI8F32123C70MMC
EDI8F32123C85MMC
EDBF32123C
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