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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology


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    PDF PD48288209, 288M-BIT PD48288209 432-word PD48288218 PD48288236 PD48288236

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PDM34089 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter Features n n n n n n n n n n n n n n n Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors Single 3.3V power supply Mode selectable for interleaved or linear burst:


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    PDF PDM34089 680X0 680x0 100-pin PDM34089 64Kx32)

    IS61S6432

    Abstract: No abstract text available
    Text: ISSI IS61S6432 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM JUNE 2001 FEATURES DESCRIPTION • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control using


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    PDF IS61S6432 100-Pin IS61S6432

    T35L6432B

    Abstract: T35L6432B-10Q T35L6432B-12T
    Text: tm TE CH T35L6432B SYNCHRONOUS BURST SRAM 64K x 32 SRAM Flow-Through Burst Mode FEATURES • Fast Access times: 9 / 10 / 11 / 12 ns • Single 3.3V +0.3V/-0.165V power supply • Common data inputs and data outputs • Individual BYTE WRITE ENABLE and GLOBAL WRITE control


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    PDF T35L6432B T35L6432B T35L6432B-10Q T35L6432B-12T

    Untitled

    Abstract: No abstract text available
    Text: IC61S6432 Document Title 64K x 32 Pipelined Sync. SRAM Revision History Revision No History Draft Date Remark 0A Initial Draft September 13,2001 The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


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    PDF IC61S6432 SSR016-0A IC61S6432-6TQI IC61S6432-6PQI IC61S6432-7TQI IC61S6432-7PQI IC61S6432-5TQI IC61S6432-5PQI IC61S6432-8TQI

    W3DG6417V-D2

    Abstract: No abstract text available
    Text: White Electronic Designs W3DG6417V-D2 PRELIMINARY* 128MB - 16Mx64, SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6417V is a 16Mx64 synchronous DRAM module which consists of four 16Mx16 SDRAM components in TSOP II package and one 2K EEPROM


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    PDF W3DG6417V-D2 128MB 16Mx64, PC100 PC133 W3DG6417V 16Mx64 16Mx16 W3DG6417V-D2

    CY7C1381B-100AI

    Abstract: 381B CY7C1381B CY7C1381B-117AC CY7C1383B
    Text: 381B CY7C1381B CY7C1383B 512 x 36/1M × 18 Flow-Thru SRAM Features • • • • • • • • • • • Fast access times: 7.5, 8.5, 10.0 ns Fast clock speed: 117, 100, 83 MHz Provide high-performance 3-1-1-1 access rate Optimal for depth expansion


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    PDF CY7C1381B CY7C1383B 36/1M CY7C1381B/CY7C1383B x36/1M CY7C1381B-100AI 381B CY7C1381B CY7C1381B-117AC CY7C1383B

    Untitled

    Abstract: No abstract text available
    Text: ÏÂ TOSHIBA { DI SCRET E/ OP TO } 9097250 TOSHIBA DISCRETE/OPTO D e J t DT7SS0 DQ17DQÔ □ | 99D 17008 TLRI I I GaP RED LIGHT EMISSION FEATURES: • Slim Mini Glass Sealed Type* • Small Package & Wide Viwing Angle - Suitable for Compact Equipment as a Operating


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    PDF DQ17DQÔ

    PU3119

    Abstract: PU4119 ci 55 PU3219 PU4219 PU4419 PU4519
    Text: Power Transistor Arrays PU3119, PU4119, PU4419 P U 3119, P U 4119, P U 4419 P ackage Dimensions PU3119 Silicon NPN Triple-Diffused Planar Type 20. 5max. Pow er Amplifier, Switching C om plem entary Pair with P U 3 2 1 9 , P U 4 21 9, P U 4 5 1 9 ° * i. jdnnpw


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    PDF PU3119, PU4119, PU4419 PU3219, PU4219, PU4519 PU3119: PU3119 PU4119 ci 55 PU3219 PU4219 PU4419 PU4519

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61SF6436 64Kx 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION JUNE 1998 FEATURES DESCRIPTION • Fast access times: 8.5 ns, 9 ns, 10 ns The IS S I IS61SF6436 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF IS61SF6436 IS61SF6436 680X0â 008-0C SF6436-8 IS61SF6436-9TQ IS61SF6436-9PQ IS61SF6436-1OTQ

    Untitled

    Abstract: No abstract text available
    Text: IS 6 1 C 6 3 2 A m s 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM MAY 1998 FEATURES DESCRIPTION • Fast access time: The I S S I IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF IS61C632A 680X0â ns-125 ns-100 ns-83 ns-75 PK13197TÃ QGQGS55

    Untitled

    Abstract: No abstract text available
    Text: 64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • Fast access times: 8 .5 ns, 9 ns, 10 ns • Internal self-tim ed write cycle • Individual Byte W rite Control and Global W rite • Clock controlled, registered address, data and


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    PDF IS61SF6436 680X0â IS61SF6436 SF6436-8 IS61SF6436-9TQ IS61SF6436-9PQ IS61SF6436-10TQ IS61SF6436-10PQ IS61SF6436-1OTQI

    Untitled

    Abstract: No abstract text available
    Text: IS61C632A m i 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM SEPTEMBER 1997 FEATURES DESCRIPTION • The I S S I IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF IS61C632A IS61C632A 680X0â 32A-4TQ IS61C632A-4PQ IS61C632A-5TQ IS61C632A-5PQ IS61C632A-6TQ IS61C632A-6PQ IS61C632A-7TQ

    Untitled

    Abstract: No abstract text available
    Text: 64K x 32 LOW VOLTAGE SYNCHRONOUS PIPELINE STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • Fast access time: The IS S I IS61LV6432 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,


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    PDF IS61LV6432 680X0â ns-83 ns-75 ns-66 T004404 SR018-0A

    Untitled

    Abstract: No abstract text available
    Text: m IS61SP6436 64Kx 36 SYNCHRONOUS PIPELINED STATIC RAM i PRELIM IN A R Y DECEM BER 1997 FEATURES • Internal self-timed write cycle DESCRIPTION • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control


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    PDF IS61SP6436 IS61SP6436 680X0â IS61SP6436-7TQ IS61SP6436-7PQ IS61SP6436-8TQ IS61SP6436-8PQ IS61SP6436-117TQI IS61SP6436-117PQI IS61SP6436-5TQI

    Untitled

    Abstract: No abstract text available
    Text: IS ffl 32K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JUNE 1997 FEATURES DESCRIPTION • Fast access tim e: The ISSI IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF IS61C632A 680X0â ns-125 ns-100 ns-83 ns-75 ns-66 S61C632A-5TQ IS61C632A-5PQ IS61C632A-6TQ

    Untitled

    Abstract: No abstract text available
    Text: issr IS61SF6432 64Kx 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION JUNE 1998 FEATURES DESCRIPTION • Fast access time: 9 ns, 10 ns The I S S I IS61SF6432 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,


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    PDF IS61SF6432 IS61SF6432 680X0â 0012-0C

    Untitled

    Abstract: No abstract text available
    Text: CY7B131 CY7B141 F# CYPRESS IK x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron BiCMOS for high perform ance • Automatic power-down • M aster CY7B131 easily expands data bus width to 16 or more bits using slave CY7B141 • BÜ5Ÿ output flag on CY7B131; BUSŸ


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    PDF CY7B131 CY7B141 CY7B131 CY7B131; CY7B141

    Untitled

    Abstract: No abstract text available
    Text: m IS 61S P 6436 64Kx 36 SYNCHRONOUS PIPELINED STATIC RAM i ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The I S S I IS61SP6436 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF 100-Pin 61SP6436-6PQ IS61SP6436-7TQ IS61SP6436-7PQ IS61SP6436-8TQ IS61SP6436-8PQ SP6436-4 IS61SP6436-5TQI IS61SP6436-5PQI

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61SF6436 64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION MARCH1997 FEATURES DESCRIPTION • Fast access times: 8.5 ns, 9 ns, 10 ns The IS S IIS61SF6436 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF IS61SF6436 100-Pin SR008-OB SF6436-8 IS61SF6436-9TQ IS61SF6436-9PQ IS61SF6436-10TQ IS61SF6436-10PQ

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61SP6436 64Kx 36 SYNCHRONOUS PIPELINED STATIC RAM PRELIMINARY DECEMBER 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The IS S IIS61SP6436 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,


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    PDF IS61SP6436 100-Pin IS61SP6436-6TQ IS61SP6436-6PQ IS61SP6436-7TQ IS61SP6436-7PQ IS61SP6436-8TQ IS61SP6436-8PQ IS61SP6436-117TQI IS61SP6436-117PQI

    6ao1

    Abstract: No abstract text available
    Text: IB M 1 1 M 3 2 7 3 5 B IB M 1 1 M 3 2 7 3 5 C 32M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual ln-line Memory Module • 32Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: • System Performance Benefits: - Buffered inputs (except RAS, Data)


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    PDF 32Mx72 104ns IBM11M32735B IBM11M32735C 75H1972 SA14-4627-02 6ao1

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61SF632A 32K x 32 SYNCHRONOUS FLOW-THROUGH FAST STATIC RAM FEATURES • Fast access time: 9 ns, 10 ns • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control


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    PDF IS61SF632A 100-Pin 11-0A IS61SF632A-9TQ IS61SF632A-9PQ IS61SF632A-10TQ IS61SF632A-10PQ IS61SF632A-10TQI IS61SF632A-10PQI

    DQ45-A

    Abstract: 033J1
    Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle


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    PDF IBM13N1649NC IBM13N1809NC 168-Pin 1Mx64/80 DQ45-A 033J1