SILICONIX DG201
Abstract: DG202 SILICONIX DQ202 DG201A dg201abk siliconix DG201 dg202cj siliconix
Text: SILICONIX INC 03 8254735 SILICONIX » E § Û55473S 0012145 4 03E INC 3 Slllconix Slllconix Incorporated D 12145 DG201 A/202 Quad Monolithic SPST CMOS Analoa Switches T—51—11 FEATURES BENEFITS APPLICATIONS • + 15 Volt Input Range • Wide Dynamic Range
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55473S
DG201
yDQ201A
DG202
DG201A
DG202
2S4735
T-51-11
X1000)
SILICONIX DG201
DG202 SILICONIX
DQ202
dg201abk siliconix
dg202cj siliconix
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Untitled
Abstract: No abstract text available
Text: UG3001-UG3005 Vishay Lite-On Power Semiconductor 3.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • U ltra -fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage
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UG3001-UG3005
UG3001
UG3002
UG3003
UG3005
D-74025
24-Jun-98
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diode SB560
Abstract: No abstract text available
Text: SB520-SB560 Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 150A peak
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SB520-SB560
SB520
SB530
SB540
SB550
SB560
D-74025
24-Jun-98
diode SB560
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Untitled
Abstract: No abstract text available
Text: 1N5400G-1N5408G Vishay Lite-On Power Semiconductor 3.0A Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 125A peak • Plastic m aterial - UL R ecognition flam m ability
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1N5400G-1N5408G
1N5400G
1N5401G
1N5402G
1N5403G
1N5404G
1N5405G
1N5406G
1N5407G
1N5408G
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Untitled
Abstract: No abstract text available
Text: HIE D TAIWAN LITON ELECTRONIC U T E H iH • flflBSb'iS D0QM23H 110 » T L I T KBPC3005 thru 310 SEMICONDUCTORS 'V ' i 'h - v s VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere« PBPC-3 .445 111.3 FEATURES • • Rating to 1000V PRV Surge overload rating to 45 Amperes peak
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D0QM23H
KBPC3005
MIL-STD-202
DO-15
0201AD
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80 ria 120
Abstract: marking CODE GA SR502 SR520
Text: % TAIWAN SEMICONDUCTOR SR502 - SR520 5.0 AMPS. Schottky Barrier Rectifiers DQ-201AD RoHS COMPLIANCE -TÆH- F e atures 4- ^ ^ •<> ^ Low p o w e r loss, high efficicncy. High current capability, Low VF. High re liab ility High surge current capability.
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SR502
SR520
DQ-201AD
00-2Q1AD
MlL-STD-202.
SR50X
SR52Q)
80 ria 120
marking CODE GA
SR520
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DG201ACJ
Abstract: DG201A DG201ACK ceramic injection dg202
Text: 4302271 ÜDSnEB b “ì5 • HAS DG201A, DG202 30 HARRIS S E M I C O N D U C T O R Quad SPST CMOS Analog Switches December 1993 Features Description • ±15V Input Signal Range • Logic Inputs Accept Negative Voltages The DG201A normally open and DG202 (normally closed)
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DG201A,
DG202
DG201A
DG201A
DG202
175iJ)
DQ201A,
DG201ACJ
DG201ACK
ceramic injection
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IC MAX327
Abstract: MAX326CEE MAX326CPE MAX326CSE
Text: 19-3966. Rav 2; 7/96 / U I / I X I / M Quad, SPST, Ultra-Low Leakage, CMOS Analog Switches „Feature* ♦ 10pA Max Leakage <1pA Typ The MAX326/MAX327's low charge, injection (2pC typ) minimizes signal error. Operation from single supplies (+10V to +30V), dual supplies (±5V to ±18V), and unbal
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MAX326/MAX327
DG201A/DG202
DG211/DG212
1000pA
5000pA.
IC MAX327
MAX326CEE
MAX326CPE
MAX326CSE
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IN6817
Abstract: IN5822 SR5045 sr560 HER207 iN6818 in6819 SFa5 SR540 IN5818
Text: RECTRON LT» 24E D • T ~ 0 l-0 f 7blOS45 0D000G5 S ■ SCHOTTKY BARRIER RECTIFIERS O PERATIN G TEM P ER A T U R E RANGE 20V to 45V: -6 5 ° C to +125°C, 50V to 60V: -6 5 °C to +150' STO RAG E TEM P ER A T U R E -6 5 °C to +150°G TYPE Maximum Peak Reverse
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7blOS45
AMPERE-SCHOTTKY/DO-41
IN6817
IN5818
IN5819
SR130
HER802
HER803
HER804
HER805
IN5822
SR5045
sr560
HER207
iN6818
in6819
SFa5
SR540
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1N4007 sma
Abstract: P600I D0214AC SMA D0-214AB BY359-1500 BY228-1500 BYX90G 1N4003 1N4004 1N4007
Text: MHTEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru electronics Ten: 095 739-09-95 C T a H A a p T H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: iFmax [A] 1N4002 1N4003 1N4004 1N4005 1N4007 V Rmax [B] 100 200 400 600 1000 If [A] 1,0 1,0 1,0 V f npw [B] 1,1 1,1
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1N4002
1N4003
1N4004
1N4005
1N4007
1N5062
1N5399
BY133
EM516
BYX90G
1N4007 sma
P600I
D0214AC SMA
D0-214AB
BY359-1500
BY228-1500
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ru 94v-01
Abstract: P15J BY126 BY127 1n5624g BY227
Text: :n l 07 iwstr/ power D ElI 30^0137 000233’=] 0 G P 1 5 S E R IE S „ T - 0 / -/S - ^ M IN IA TU R E G L A S S P A S S IV A T Ë D J U N C T IO N P L A S T IC R E C T I F IE R VOLTAGE RANGE 50 to 1000 Volts C U R R EN T 1.5 Amperes FEA TU R ES DO-15 • High temperature metallurgically bonded— no
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DO-15
MIL-STD-19500
ru 94v-01
P15J
BY126
BY127
1n5624g
BY227
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY GLASS PASSIVATED RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C Maximum Peak ;'f! JilSflftMif? Voltage Maximum Average • Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ TA V PK Maximum Reverse Recovery Time Maximum Reverse
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PASSIVATED/DQ-201AD
PR3001G
PR3002G
PR3003G
PR3004G
PR3005G
PR3006G
PR3007G
25rge
PASSIVATED/DO-41
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IN5822
Abstract: IN5817 IN5819 IN5821 IN5820
Text: 5. S C H O T T K Y B A R R IE R R EC TIFIER PIV Peak Inverse Voltage MAX AVG Rectified C urrent @ Half W ave Res. Load 60Hz TYPE MAX FWD Peak Surge Current -K-60 Hz Superimposed ) I (Surge) FM TA MAX Reverse Current @PIV Voltage @25°C Ta 1R MAX Forw ard Voltage
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-K-60
DO-41
IN5817
IN5818
IN5819
SB160
DQ-201AD
IN5820
IN5821
IN5822
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Untitled
Abstract: No abstract text available
Text: MCC 5 .0 AMPERE H IG H E FFIC IE N T R E C TIFIE R / DQ-201AD HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508 6 .0 50 100 200 300 400 600 800 1000 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 55 55 55 55 55 55 55 55 200 200 200 200 200 200 200 200 Package Outline Pg. A-1
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DQ-201AD
HER501
HER502
HER503
HER504
HER505
HER506
HER507
HER508
HER601
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Untitled
Abstract: No abstract text available
Text: SF30AG-SF30JG Vishay Lite-On Power Semiconductor 3.0A Super-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage
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SF30AG-SF30JG
SF30AG
SF30BG
SF30C
SF30D
SF30FG
SF30G
SF30H
SF30JG
D-74025
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Untitled
Abstract: No abstract text available
Text: PR3001G-PR3007G Vishay Lite-On Power Semiconductor ▼ 3.0A Fast Recovery Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • F a st s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility and lo w fo rw a rd
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PR3001G-PR3007G
3001G
3002G
300iBHAY
D-74025
24-Jun-98
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APPLICATION DIODE 1N5406
Abstract: 1N 5400 diode LITEON 1N5406 1n5400-1n5408 FU 5408
Text: 1N5400-1N5408 Vishay Lite-On Power Semiconductor ▼ 3.0A Rectifier Features • D iffu se d ju n c tio n • H igh c u rre n t c a p a b ility and lo w fo rw a rd v o lta g e d ro p • S u rg e o v e rlo a d ra tin g to 2 0 0 A p e a k • L o w re ve rs e le a k a g e c u rre n t
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1N5400-1N5408
1N5404
1N5407
D-74025
24-Jun-98
APPLICATION DIODE 1N5406
1N 5400 diode
LITEON 1N5406
1n5400-1n5408
FU 5408
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Untitled
Abstract: No abstract text available
Text: SD830-SD845 Vishay Lite-On Power Semiconductor ▼ 8A Schottky Barrier Rectifiers Features • High current capability and low forward voltage drop • High surge capability • Guard ring for transient protection • Low power loss, high efficiency • Plastic material has UL flammability
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SD830-SD845
SD830
SD840
SD845
D-74025
24-Jun-98
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Untitled
Abstract: No abstract text available
Text: GI500 THRU GI510 MEDIUM CURRENT PLASTIC RECTIFIER VOLTAGE - 50 to 1000 Volts C U R R EN T - 3.0 Amperes FEATURES ♦ High surge current capability DQ-201AD .210 5.31 . 190(4 .8 ] ♦ Plastic package has Underwriters Laboratory Flammability Classification 94 V -0
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GI500
GI510
DQ-201AD
D0-201
MILSTD-750,
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SF30DG
Abstract: No abstract text available
Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current
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SF30AG
SF30JG
IL-STD-202,
DQ-201AD
DS24014
SF30DG
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CR3U-060
Abstract: CR3U-010 CR3U-020 CR3U-040 CR3U-100
Text: Datasheet Central CR3U-010 SERIES ULTRA FAST RECOVERY RECTIFIER 3.0 AMP, 100 THRU 1000 VOLTS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DQ-201AD CASE Manufacturers of World Class Discrete Semiconductors
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cr3u-010
do-201ad
CR3U-010
CR3U-020)
CR3U-040)
CR3U-060
CR3U-100)
CR3U-020
CR3U-040
CR3U-100
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1N4005G
Abstract: 1N4006G 1N4003G
Text: GLASS PASSIVATED RECTIFIERS i i 1" • • i •'« - Io A PACKAGE \ 1.0 i " 1.5 DO-41 O U T L IN E 3.0 D O - 15 - 0 .8 DQ-201AD — 1.2 - 0 .8 \ ( m m / T y p .) \ V rrm 5.0 6.34 - j |—2.6 I ,| — b 4 8.8 r \ CV o 1 t s ) ! \ 50 1N4001G RL151G RL201G
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DQ-201AD
DO-41
1N4001G
1N4002G
1N4003G
1N4004G
1N4005G
1N4006G
1N4007G
RL151G
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h311
Abstract: No abstract text available
Text: LEAD FORMING SPECIFICATIONS Available for buk packaging only D O -41 Unit : mm I D O -15 A A B H01 12.5 ± 1.0 H02 1 0 .0 1 0.5 H02-1 10.0 ± 0.5 H 02-2 1 0 .0 1 0.5 H02-3 H 02-4 H02-5 B [ A A B B H 03 -3 1 2 .5 1 0.5 8 . 5 1 0.5 H11 1 2 .5 1 0.5 8 . 4 1 0.5
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H02-1
H02-3
H02-5
H03-1
DQ-201AD
h311
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SR504
Abstract: cny 42 SR502 SR503 SR505 SR506
Text: SR502thru s TSC SR506 5.0 AMPS. SCHOTTKY BARRIER RECTIFIERS DQ-201AD FEATURES * Low forward voltage drop T * High current capability •220 5.6 * High reliability 1.0 (25.4) .197 <5.0) DIA. * High surge current capability MECHANICAL DATA MIN. Li Q * Case: D 0*201AD Molded plastic
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SR502
SR506
00-201AD
MIL-STD-202,
SR506)
SR504
cny 42
SR503
SR505
SR506
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